Qing Zhu

1.2k total citations
97 papers, 889 citations indexed

About

Qing Zhu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Qing Zhu has authored 97 papers receiving a total of 889 indexed citations (citations by other indexed papers that have themselves been cited), including 85 papers in Condensed Matter Physics, 73 papers in Electrical and Electronic Engineering and 46 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Qing Zhu's work include GaN-based semiconductor devices and materials (85 papers), Ga2O3 and related materials (46 papers) and Radio Frequency Integrated Circuit Design (32 papers). Qing Zhu is often cited by papers focused on GaN-based semiconductor devices and materials (85 papers), Ga2O3 and related materials (46 papers) and Radio Frequency Integrated Circuit Design (32 papers). Qing Zhu collaborates with scholars based in China, United Kingdom and Japan. Qing Zhu's co-authors include Xiaohua Ma, Ling Yang, Yue Hao, Meng Zhang, Bin Hou, Minhan Mi, Jiejie Zhu, Mei Wu, Lixiang Chen and Xiaowei Zhou and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Access.

In The Last Decade

Qing Zhu

89 papers receiving 839 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Qing Zhu China 18 767 657 350 199 185 97 889
N. G. Kolin Russia 16 518 0.7× 422 0.6× 356 1.0× 215 1.1× 189 1.0× 57 722
Jinyan Wang China 22 1.3k 1.7× 1.1k 1.7× 696 2.0× 270 1.4× 265 1.4× 116 1.5k
V. Rouco Spain 15 427 0.6× 184 0.3× 251 0.7× 148 0.7× 337 1.8× 34 698
Timothy J. Jackson United Kingdom 13 435 0.6× 346 0.5× 496 1.4× 136 0.7× 383 2.1× 43 940
M. Sirena Argentina 16 353 0.5× 165 0.3× 351 1.0× 133 0.7× 320 1.7× 86 691
Jun Ho Son South Korea 16 394 0.5× 289 0.4× 163 0.5× 219 1.1× 284 1.5× 40 667
D. S. Rawal India 15 424 0.6× 474 0.7× 164 0.5× 169 0.8× 153 0.8× 83 619
L. Polenta Italy 15 397 0.5× 469 0.7× 234 0.7× 237 1.2× 199 1.1× 41 725
A. Fontserè Spain 13 289 0.4× 305 0.5× 143 0.4× 92 0.5× 86 0.5× 25 415
J.D. Brown United States 13 741 1.0× 404 0.6× 361 1.0× 243 1.2× 201 1.1× 27 816

Countries citing papers authored by Qing Zhu

Since Specialization
Citations

This map shows the geographic impact of Qing Zhu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Qing Zhu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Qing Zhu more than expected).

Fields of papers citing papers by Qing Zhu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Qing Zhu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Qing Zhu. The network helps show where Qing Zhu may publish in the future.

Co-authorship network of co-authors of Qing Zhu

This figure shows the co-authorship network connecting the top 25 collaborators of Qing Zhu. A scholar is included among the top collaborators of Qing Zhu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Qing Zhu. Qing Zhu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhu, Jiejie, Bowen Zhang, Mingchen Zhang, et al.. (2025). High RF Performance Enhancement-Mode Thin-Barrier AlGaN/GaN HEMTs on Si Substrate for Low-Voltage Applications. IEEE Transactions on Electron Devices. 72(7). 3469–3474. 2 indexed citations
2.
Hou, Bin, Ling Yang, Yongsheng Zhu, et al.. (2025). 3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN. Applied Physics Letters. 126(6). 5 indexed citations
3.
Zhu, Jiejie, et al.. (2025). High-Efficiency AlN/GaN HEMTs With High-Quality Stacked Gate Dielectrics on Si Substrate for K- and Ka-Band Applications. IEEE Transactions on Electron Devices. 72(8). 4049–4055.
4.
Wang, Pengfei, Minhan Mi, Zhihong Chen, et al.. (2024). 5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer. IEEE Electron Device Letters. 45(10). 1717–1720. 1 indexed citations
5.
Lu, Hao, Bin Hou, Ling Yang, et al.. (2024). High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts. IEEE Transactions on Electron Devices. 71(9). 5218–5224. 2 indexed citations
6.
Chen, Yilin, Qing Zhu, Meng Zhang, et al.. (2024). On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls. Applied Physics Letters. 125(6). 1 indexed citations
7.
Wang, Pengfei, Minhan Mi, Yilin Chen, et al.. (2024). Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages. IEEE Transactions on Electron Devices. 71(3). 1421–1427. 5 indexed citations
8.
Chen, Yilin, Qing Zhu, Meng Zhang, et al.. (2024). Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs. IEEE Transactions on Electron Devices. 71(3). 1448–1454. 1 indexed citations
9.
Zhu, Qing, et al.. (2024). Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs. Semiconductor Science and Technology. 39(6). 65014–65014. 1 indexed citations
10.
Mi, Minhan, Pengfei Wang, Yilin Chen, et al.. (2023). High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications. IEEE Transactions on Electron Devices. 71(3). 1383–1386. 10 indexed citations
11.
Mi, Minhan, Pengfei Wang, Yilin Chen, et al.. (2023). InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications. IEEE Journal of the Electron Devices Society. 11. 72–77. 5 indexed citations
12.
Wang, Pengfei, Yilin Chen, Ziyue Zhao, et al.. (2023). Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN high electron mobility transistors for optimizing linearity at high electrical fields in the Ka band. Semiconductor Science and Technology. 38(9). 94001–94001. 1 indexed citations
13.
Mi, Minhan, Jiejie Zhu, Pengfei Wang, et al.. (2022). High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for Ka-Band Applications. IEEE Transactions on Electron Devices. 69(8). 4188–4193. 8 indexed citations
14.
Yang, Mei, Yutong Han, Pengfei Wang, et al.. (2022). High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure. Applied Physics Letters. 120(6). 26 indexed citations
15.
Mi, Minhan, Yutong Han, Pengfei Wang, et al.. (2022). High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications. IEEE Transactions on Electron Devices. 70(1). 43–47. 14 indexed citations
16.
Wang, Pengfei, Meng Zhang, Qing Zhu, et al.. (2022). Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates. Applied Physics Letters. 120(10). 12 indexed citations
17.
Chen, Yilin, Ting‐Chang Chang, Qing Zhu, et al.. (2021). Investigating two-stage degradation of threshold voltage induced by off-state stress in AlGaN/GaN HEMTs. Semiconductor Science and Technology. 37(2). 25017–25017. 1 indexed citations
18.
Mi, Minhan, Jiejie Zhu, Pengfei Wang, et al.. (2021). Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation. IEEE Transactions on Electron Devices. 69(2). 631–636. 15 indexed citations
19.
Zhang, Meng, Minhan Mi, Bin Hou, et al.. (2019). The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors. Japanese Journal of Applied Physics. 58(SC). SCCB25–SCCB25. 1 indexed citations
20.
Wu, Mei, Meng Zhang, Qing Zhu, et al.. (2019). Characterization of self-heating in GaN high electron mobility transistors using channel resistance measurement. Japanese Journal of Applied Physics. 58(SC). SCCB11–SCCB11. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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