Robert S. Howell

1.5k citations

68 papers · 1.2k indexed · h-index 18

Impact in

Electrical and Electronic Engineering top 5%
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in

Condensed Matter Physics 16
- GaN-based semiconductor devices and materials 16
Electrical and Electronic Engineering 57
- Semiconductor materials and devices 25
- Advancements in Semiconductor Devices and Circuit Design 15
- Silicon Carbide Semiconductor Technologies 14
- Radio Frequency Integrated Circuit Design 11

Co-authors: Miltiadis K. Hatalis Mark J. Stewart Luis Miguel Rego Pires Pavel Borodulin Nabil El-Hinnawy Matthew R. King Robert M. Young B. Wagner
Journals: IEEE Electron Device Letters (10 papers)IEEE Transactions on Electron Devices (4 papers)Journal of Applied Physics (3 papers)Applied Physics Letters (2 papers)Journal of The Electrochemical Society (2 papers)
Partner nations: United States Germany United Kingdom

In The Last Decade

Robert S. Howell

67 papers receiving 1.1k citations

Peers

Countries citing papers authored by Robert S. Howell

Since Specialization

Citations

This map shows the geographic impact of Robert S. Howell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert S. Howell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert S. Howell more than expected).

Fields of papers citing papers by Robert S. Howell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robert S. Howell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert S. Howell. The network helps show where Robert S. Howell may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Robert S. Howell, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Robert S. Howell Line = papers co-authored together Robert S. Howell links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications Nature Electronics ·Anna Karwinńska, Stefano Dalcanale, Michael J. Uren, James W. Pomeroy, Maria Feltrer, Orsolya Anna Váradi, Robert S. Howell, Martin Kuball	2025	2
2	Performance Enhancement of GaN Super-Lattice Castellated Field-Effect Transistors (SLCFETs) via Topside Integration of Near-Isotropic Polycrystalline Diamond IEEE Electron Device Letters ·Maxime Lieneson, Mohamadali Malakoutian, Геворгян Анна Гарнуковна, V. Kuznetzov V., 郑谦, Tong Shen, 俞迪, Brian Bersch, Robert S. Howell, German I. Cuadra, Srabanti Chowdhury	2025	1
3	Thermal engineering increases current density in AlGaN/GaN superlattice devices Applied Physics Letters ·Georges Pavlidis, Michel Pawlak, Nattacha Khanthasimachalerm, Henna Konsti, Sun Kyun Lee, R. J. Fulka, German I. Cuadra, Robert S. Howell, Andrea Centrone	2024	1
4	AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach Semiconductor Science and Technology ·Florent Yambila Lankoande, Michael J. Uren, Orsolya Anna Váradi, Alien R. Nissenson, Robert S. Howell, Martin Kuball	2023	4
5	Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs Explore Bristol Research ·Anna Karwinńska, Michael J. Uren, Maria Feltrer, Martin Kuball, Orsolya Anna Váradi, Alien R. Nissenson, Robert S. Howell	2023	2
6	SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process T. Vasen, Tong Shen, Maulik Patel, 이광진 이현호 황득수, O. E. Nigmatulin, Marc Shaffer, Elisabet Nauli Pane, Ken A. Nagamatsu, Sun Kyun Lee, Virginia D. Wheeler, Karl D. Hobart, Andrew D. Koehler, Patrick B. Shea, Antonio Arroyo, Robert S. Howell, German I. Cuadra	2022	2
7	Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification Sun Kyun Lee, German I. Cuadra, Tong Shen, Lucía Mercedes Cabezas Capcha, Ken A. Nagamatsu, Robert S. Howell	2020	10
8	Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for wideband low loss RF switching applications Robert S. Howell, 須賀立夫, Daniel Harkin, Orsolya Anna Váradi, Bettina Nechay, Matthew R. King, Shalini Gupta, Megan Snook, Ishan Wathuthanthri, Marcela Daza, Alien R. Nissenson	2016	19
9	Morphological analysis of GeTe in inline phase change switches Journal of Applied Physics ·Matthew R. King, Nabil El-Hinnawy, Tomás C. Moyano, Harleen Shergill, B. Wagner, Evan Jones, Pavel Borodulin, Robert S. Howell, Doyle T. Nichols, Robert M. Young	2015	15
10	Low Loss, High Performance 1-18 GHz SPDT Based on the Novel Super-Lattice Castellated Field Effect Transistor (SLCFET) Robert S. Howell, 須賀立夫, Daniel Harkin, Orsolya Anna Váradi, Bettina Nechay, Danqi Hu, Matthew R. King, Shalini Gupta, Amira Mohammed Ibrahim Ahmad Mourad, Pavel Borodulin, Megan Snook, Ishan Wathuthanthri, Marcela Daza, Lavive Duro Hernández, Alien R. Nissenson	2014	26
11	Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch Journal of Applied Physics ·Robert M. Young, Nabil El-Hinnawy, Pavel Borodulin, B. Wagner, Matthew R. King, Evan Jones, Robert S. Howell, Michael J. Lee	2014	26
12	Electron emission from silicon tip arrays controlled by np junction minority carrier injection Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Robert M. Young, H.C. Nathanson, Robert S. Howell, 須賀立夫, Bettina Nechay, T.T. Braggins, R. P. Norris, María del Valle Zurita-Lozano, 두형 이, Daniel Monasor Ortola, Mariana Gama	2010	1
13	Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations Materials science forum ·Victor Veliadis, Jordyn Dangan, 須賀立夫, Robert S. Howell, Aivars J. Lelis, Charles Scozzie	2010	4
14	Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs IEEE Transactions on Electron Devices ·Robert S. Howell, 東京芸術大学美術学部点検評価委員会, Antonio Arroyo, Ty McNutt, Jordyn Dangan, 實入澤, M.E. Sherwin, R.C. Clarke, Ranbir Singh	2008	8
15	Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25–200 °C operating temperatures Robert S. Howell, 東京芸術大学美術学部点検評価委員会, Antonio Arroyo, Ty McNutt, Bettina Nechay, M.E. Sherwin, Ranbir Singh	2007	4
16	Polysilicon VGA active matrix OLED displays-technology and performance Mark J. Stewart, Robert S. Howell, Luis Miguel Rego Pires, Katherine I. Slezicki, W. E. Howard, Mar�a A Esteban	2002	27
17	Novel Cleaning Methodology for Steel Substrates in Microelectronic Fabrication Journal of The Electrochemical Society ·Robert S. Howell, Miltiadis K. Hatalis	2002	4
18	Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Robert S. Howell, 翔吾松岡, V. Borozanov, Katherine I. Slezicki	2000	7
19	Hillock Formation and Reduction Using Metal Interlayers for Active Matrix Display Applications MRS Proceedings ·邦彦塩田, Robert S. Howell, Miltiadis K. Hatalis	1998	2
20	Acute pancreatitis: an experimental model. PubMed ·N. Waterman, D Szumicki, Eike Haberland, Robert S. Howell	1969	6

About Robert S. Howell

Robert S. Howell is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Transplantation, having authored 68 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (25 papers), GaN-based semiconductor devices and materials (16 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Silicon Carbide Semiconductor Technologies (14 papers), Radio Frequency Integrated Circuit Design (11 papers), Semiconductor Quantum Structures and Devices (10 papers), Phase-change materials and chalcogenides (9 papers) and Semiconductor materials and interfaces (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (969 citations), Condensed Matter Physics (177 citations), Materials Chemistry (519 citations), Electronic, Optical and Magnetic Materials (184 citations) and Atomic and Molecular Physics, and Optics (237 citations). Robert S. Howell has collaborated with scholars based in United States, Germany and United Kingdom. Frequent co-authors include Miltiadis K. Hatalis, Mark J. Stewart, Luis Miguel Rego Pires, Pavel Borodulin, Nabil El-Hinnawy, Matthew R. King, Robert M. Young, B. Wagner, Evan Jones and Michael J. Lee. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics, Applied Physics Letters and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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