Wenshen Li

3.4k total citations
64 papers, 2.2k citations indexed

About

Wenshen Li is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Wenshen Li has authored 64 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Materials Chemistry, 34 papers in Electronic, Optical and Magnetic Materials and 31 papers in Electrical and Electronic Engineering. Recurrent topics in Wenshen Li's work include Ga2O3 and related materials (34 papers), ZnO doping and properties (24 papers) and Electronic and Structural Properties of Oxides (20 papers). Wenshen Li is often cited by papers focused on Ga2O3 and related materials (34 papers), ZnO doping and properties (24 papers) and Electronic and Structural Properties of Oxides (20 papers). Wenshen Li collaborates with scholars based in United States, China and Italy. Wenshen Li's co-authors include Huili Grace Xing, Debdeep Jena, Kazuki Nomoto, Zongyang Hu, Kohei Sasaki, Akito Kuramata, Tohru Nakamura, Nicholas Tanen, Xiang Gao and Zexuan Zhang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Materials Science and Engineering A.

In The Last Decade

Wenshen Li

60 papers receiving 2.1k citations

Peers

Wenshen Li
Shihyun Ahn South Korea
Kuang‐Hui Li Saudi Arabia
Sin‐Liang Ou Taiwan
Dongyun Guo China
Bikramjit Chatterjee United States
Guangda Hu China
Fugang Chen China
А. А. Амиров Russia
Toshio Kagotani Japan
Wenjie Meng China
Shihyun Ahn South Korea
Wenshen Li
Citations per year, relative to Wenshen Li Wenshen Li (= 1×) peers Shihyun Ahn

Countries citing papers authored by Wenshen Li

Since Specialization
Citations

This map shows the geographic impact of Wenshen Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wenshen Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wenshen Li more than expected).

Fields of papers citing papers by Wenshen Li

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wenshen Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wenshen Li. The network helps show where Wenshen Li may publish in the future.

Co-authorship network of co-authors of Wenshen Li

This figure shows the co-authorship network connecting the top 25 collaborators of Wenshen Li. A scholar is included among the top collaborators of Wenshen Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wenshen Li. Wenshen Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Wenshen, Kazuki Nomoto, Felix V. E. Hensling, et al.. (2024). Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(3). 6 indexed citations
2.
Hao, Weibing, Feihong Wu, Wenshen Li, et al.. (2023). Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension. IEEE Transactions on Electron Devices. 70(4). 2129–2134. 52 indexed citations
3.
Li, Wenshen, Debdeep Jena, & Huili Grace Xing. (2022). A unified thermionic and thermionic-field emission (TE–TFE) model for ideal Schottky reverse-bias leakage current. Journal of Applied Physics. 131(1). 21 indexed citations
4.
Dalcanale, Stefano, Michael J. Uren, Wenshen Li, et al.. (2021). Breakdown Mechanisms in β-Ga2O3 Trench-MOS Schottky-Barrier Diodes. IEEE Transactions on Electron Devices. 69(1). 75–81. 16 indexed citations
5.
McCandless, Jonathan P., Celesta S. Chang, Kazuki Nomoto, et al.. (2021). Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire. Applied Physics Letters. 119(6). 54 indexed citations
6.
Li, Wenshen, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, & Huili Grace Xing. (2021). ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping. IEEE Transactions on Electron Devices. 68(5). 2420–2426. 34 indexed citations
7.
Ta-gen, Dai, et al.. (2020). In Situ Trace Elemental Analyses of Scheelite from the Chuankou Deposit, South China: Implications for Ore Genesis. Minerals. 10(11). 1007–1007. 2 indexed citations
8.
Li, Wenshen, et al.. (2020). Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes. Applied Physics Letters. 116(19). 117 indexed citations
9.
Li, Lei, Kazuki Nomoto, Ming Pan, et al.. (2020). GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz. IEEE Electron Device Letters. 41(5). 689–692. 89 indexed citations
10.
Santi, Carlo De, Wenshen Li, Kazuki Nomoto, et al.. (2020). Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements. IEEE Transactions on Electron Devices. 67(10). 3954–3959. 31 indexed citations
11.
Li, Wenshen, Kazuki Nomoto, Debdeep Jena, & Huili Grace Xing. (2020). Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β -Ga2O3. Applied Physics Letters. 117(22). 27 indexed citations
12.
Meneghini, Matteo, Maria Ruzzarin, Carlo De Santi, et al.. (2020). Degradation Mechanisms of GaN‐Based Vertical Devices: A Review. physica status solidi (a). 217(7). 13 indexed citations
13.
Li, Wenshen, Kazuki Nomoto, Aditya Sundar, et al.. (2019). Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms. Japanese Journal of Applied Physics. 58(SC). SCCD15–SCCD15. 18 indexed citations
14.
Meneghesso, Gaudenzio, Enrico Zanoni, Matteo Meneghini, et al.. (2019). Breakdown Walkout in Polarization-Doped Vertical GaN Diodes. IEEE Transactions on Electron Devices. 66(11). 4597–4603. 9 indexed citations
15.
Nomoto, Kazuki, Zongyang Hu, Wenshen Li, et al.. (2019). Recent Progress of GaN-Based Vertical Devices. ECS Meeting Abstracts. MA2019-02(31). 1348–1348. 1 indexed citations
16.
Nomoto, Kazuki, et al.. (2019). 1.6 kV Vertical Ga 2 O 3 FinFETs With Source-Connected Field Plates and Normally-off Operation. IEEE Conference Proceedings. 2019. 483–486. 13 indexed citations
17.
Hu, Zongyang, Kazuki Nomoto, Wenshen Li, et al.. (2018). Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV. IEEE Electron Device Letters. 39(6). 869–872. 254 indexed citations
18.
Li, Wenshen, Huili Grace Xing, Kazuki Nomoto, et al.. (2018). Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel. IEEE Transactions on Electron Devices. 65(6). 2558–2564. 56 indexed citations
19.
Hu, Zongyang, Kazuki Nomoto, Wenshen Li, et al.. (2018). Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors. Applied Physics Letters. 113(12). 142 indexed citations
20.
Hu, Zongyang, Kazuki Nomoto, Meng Qi, et al.. (2017). 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy. IEEE Electron Device Letters. 38(8). 1071–1074. 64 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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