Bin Hou

2.5k total citations
186 papers, 1.8k citations indexed

About

Bin Hou is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Bin Hou has authored 186 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 137 papers in Condensed Matter Physics, 121 papers in Electrical and Electronic Engineering and 81 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Bin Hou's work include GaN-based semiconductor devices and materials (137 papers), Ga2O3 and related materials (76 papers) and Semiconductor materials and devices (50 papers). Bin Hou is often cited by papers focused on GaN-based semiconductor devices and materials (137 papers), Ga2O3 and related materials (76 papers) and Semiconductor materials and devices (50 papers). Bin Hou collaborates with scholars based in China, United States and United Kingdom. Bin Hou's co-authors include Xiaohua Ma, Yue Hao, Ling Yang, Meng Zhang, Jiejie Zhu, Minhan Mi, Qing Zhu, Mei Wu, Hao Lu and Weiwei Chen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Power Electronics.

In The Last Decade

Bin Hou

174 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bin Hou China 24 1.4k 1.2k 693 336 336 186 1.8k
Yilong Hao China 24 952 0.7× 1.2k 1.0× 529 0.8× 215 0.6× 411 1.2× 104 1.6k
Chirag Gupta United States 20 1.1k 0.8× 787 0.6× 551 0.8× 463 1.4× 189 0.6× 84 1.4k
R. Muralidharan India 23 653 0.5× 800 0.7× 956 1.4× 887 2.6× 261 0.8× 113 1.8k
Houqiang Fu United States 31 1.5k 1.1× 1.3k 1.1× 1.4k 2.0× 1.0k 3.1× 440 1.3× 128 2.5k
P. Martin France 13 1.3k 0.9× 1.1k 0.9× 274 0.4× 755 2.2× 569 1.7× 35 2.0k
Gerard Harbers Netherlands 11 1.1k 0.8× 981 0.8× 320 0.5× 837 2.5× 723 2.2× 13 2.0k
Shengjun Zhou China 27 2.0k 1.4× 1.1k 0.9× 980 1.4× 1.2k 3.6× 501 1.5× 157 2.8k
Y. Xi United States 13 813 0.6× 633 0.5× 142 0.2× 309 0.9× 370 1.1× 22 1.1k
Jie Song China 20 733 0.5× 518 0.4× 308 0.4× 618 1.8× 330 1.0× 69 1.4k
Sung-Wen Huang Chen Taiwan 9 657 0.5× 626 0.5× 299 0.4× 463 1.4× 195 0.6× 13 1.2k

Countries citing papers authored by Bin Hou

Since Specialization
Citations

This map shows the geographic impact of Bin Hou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bin Hou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bin Hou more than expected).

Fields of papers citing papers by Bin Hou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bin Hou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bin Hou. The network helps show where Bin Hou may publish in the future.

Co-authorship network of co-authors of Bin Hou

This figure shows the co-authorship network connecting the top 25 collaborators of Bin Hou. A scholar is included among the top collaborators of Bin Hou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bin Hou. Bin Hou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hou, Bin, Ling Yang, Meng Zhang, et al.. (2025). Oxygen plasma and post-annealing assisted surface oxidation for high-Vth E-mode p-GaN HEMTs. Applied Physics Letters. 126(21). 1 indexed citations
2.
Hou, Bin, Ling Yang, Yongsheng Zhu, et al.. (2025). 3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN. Applied Physics Letters. 126(6). 5 indexed citations
3.
Hou, Bin, et al.. (2024). Four-band terahertz perfect-absorption and high-sensitivity sensor based on tunable Dirac semimetal. Diamond and Related Materials. 146. 111234–111234. 3 indexed citations
4.
Zhang, Yachao, Yifan Li, Zhihong Liu, et al.. (2024). Ultralow RF Loss for Si-Based GaN Materials with a Variable Power Phosphorus Ion Implantation Method. Crystal Growth & Design. 24(11). 4300–4305. 1 indexed citations
5.
Wang, Pengfei, Minhan Mi, Zhihong Chen, et al.. (2024). 5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer. IEEE Electron Device Letters. 45(10). 1717–1720. 1 indexed citations
6.
Lu, Hao, Bin Hou, Ling Yang, et al.. (2024). High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts. IEEE Transactions on Electron Devices. 71(9). 5218–5224. 2 indexed citations
7.
Wu, Mei, Bowen Yang, Ling Yang, et al.. (2024). Enhancing thermal dissipation ability and electrical performance in GaN-on-GaN HEMTs through stepped-carbon buffer design. Applied Physics Letters. 125(21). 2 indexed citations
8.
Wu, Mei, et al.. (2024). Enhanced Performance of GaN HEMTs in X‐band Applications Using SixN/Si3N4 Bilayer Passivation Technique. physica status solidi (a). 221(21). 2 indexed citations
9.
Tian, Xinyu, et al.. (2023). Hydrothermal synthesis and upconversion luminescence of cubic-shaped LiNbO3:Yb3+/Er3+ nanocrystals. Inorganic Chemistry Communications. 157. 111389–111389. 8 indexed citations
10.
Hou, Bin & Lizhi Zhu. (2023). The study on performances of environment-friendly colorless chemical conversion coatings on aluminum alloy. Journal of Physics Conference Series. 2539(1). 12049–12049. 1 indexed citations
11.
Yang, Ling, Hao Lu, Meng Zhang, et al.. (2022). Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact. Journal of Applied Physics. 132(16). 3 indexed citations
12.
Mi, Minhan, Jiejie Zhu, Pengfei Wang, et al.. (2022). High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for Ka-Band Applications. IEEE Transactions on Electron Devices. 69(8). 4188–4193. 8 indexed citations
13.
Zhu, Jiejie, Qing Zhu, Pengfei Wang, et al.. (2022). 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer. Applied Physics Letters. 120(5). 13 indexed citations
14.
Zhu, Jiejie, Minhan Mi, Meng Zhang, et al.. (2021). Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications. IEEE Journal of the Electron Devices Society. 9. 756–762. 31 indexed citations
15.
Mi, Minhan, Jiejie Zhu, Pengfei Wang, et al.. (2021). Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation. IEEE Transactions on Electron Devices. 69(2). 631–636. 15 indexed citations
16.
Hou, Lianping, Yongguang Huang, Yihui Liu, et al.. (2020). Frequency comb with 100  GHz spacing generated by an asymmetric MQW passively mode-locked laser. Optics Letters. 45(10). 2760–2760. 11 indexed citations
17.
Zhang, Meng, Minhan Mi, Bin Hou, et al.. (2019). The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors. Japanese Journal of Applied Physics. 58(SC). SCCB25–SCCB25. 1 indexed citations
18.
Zhang, Meng, Ling Yang, Bin Hou, et al.. (2019). Improving the transconductance flatness of InAlN/GaN HEMT by modulating VT along the gate width. Applied Physics Express. 12(11). 114001–114001. 12 indexed citations
19.
Hou, Bin, et al.. (2018). General laws of biological invasion based on the sampling of invasive plants in China and the United States. Global Ecology and Conservation. 16. e00448–e00448. 25 indexed citations
20.
Li, Junfei, et al.. (2008). Improving the Luminescence Efficiency of Power White LEDs with Slurry. Journal of Semiconductors. 29(5). 984–987. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Yilong Hao Breakdown of academic impact, for papers by Chirag Gupta Breakdown of academic impact, for papers by R. Muralidharan Breakdown of academic impact, for papers by Houqiang Fu Breakdown of academic impact, for papers by P. Martin Breakdown of academic impact, for papers by Gerard Harbers Breakdown of academic impact, for papers by Shengjun Zhou Breakdown of academic impact, for papers by Y. Xi Breakdown of academic impact, for papers by Jie Song Breakdown of academic impact, for papers by Sung-Wen Huang Chen
Rankless by CCL
2026