Bin Hou

2.5k citations

186 papers · 1.8k indexed · h-index 24

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 137
- GaN-based semiconductor devices and materials 137
Electronic, Optical and Magnetic Materials 81
- Ga2O3 and related materials 76

Co-authors: Xiaohua Ma (119 shared papers)Yue Hao (98 shared papers)Ling Yang (100 shared papers)Meng Zhang (86 shared papers)Jiejie Zhu (49 shared papers)Minhan Mi (50 shared papers)Qing Zhu (58 shared papers)Mei Wu (60 shared papers)
Journals: IEEE Transactions on Electron Devices (24 papers)Applied Physics Letters (20 papers)IEEE Electron Device Letters (13 papers)AIP Advances (4 papers)Science China Information Sciences (3 papers)
Partner nations: China United States United Kingdom

In The Last Decade

Bin Hou

174 papers receiving 1.7k citations

Peers

Countries citing papers authored by Bin Hou

Since Specialization

Citations

This map shows the geographic impact of Bin Hou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bin Hou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bin Hou more than expected).

Fields of papers citing papers by Bin Hou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bin Hou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bin Hou. The network helps show where Bin Hou may publish in the future.

Co-authors

The 25 scholars most cited alongside Bin Hou, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bin Hou Line = papers co-authored together Bin Hou links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 186 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric IEEE Transactions on Electron Devices ·Jiejie Zhu, Xiaohua Ma, Yong Xie, Bin Hou, Weiwei Chen, Jincheng Zhang, Yue Hao	2014	76
2	High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology IEEE Electron Device Letters ·Yang Lu, Xiaohua Ma, Ling Yang, Bin Hou, Minhan Mi, Meng Zhang, Jiaxin Zheng, Hengshuang Zhang, Yue Hao	2018	47
3	AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g _m and Gain Linearity IEEE Transactions on Electron Devices ·Hao Lu, Bin Hou, Ling Yang, Xuerui Niu, Zeyan Si, Meng Zhang, Mei Wu, Minhan Mi, Qing Zhu, Kai Cheng, Xiaohua Ma, Yue Hao	2021	45
4	Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance IEEE Electron Device Letters ·Jiejie Zhu, Lixiang Chen, Jie Jiang, Xiaoli Lu, Ling Yang, Bin Hou, Min Liao, Yichun Zhou, Xiaohua Ma, Yue Hao	2017	40
5	High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination IEEE Electron Device Letters ·Hao Lu, Bin Hou, Ling Yang, Meng Zhang, Longge Deng, Mei Wu, Zeyan Si, Sen Huang, Xiaohua Ma, Yue Hao	2021	37
6	Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region IEEE Transactions on Electron Devices ·Minhan Mi, Xiaohua Ma, Ling Yang, Yang Lu, Bin Hou, Jiejie Zhu, Meng Zhang, Hengshuang Zhang, Qing Zhu, Lin‐An Yang, Yue Hao	2017	35
7	Analysis of the Breakdown Characterization Method in GaN-Based HEMTs IEEE Transactions on Power Electronics ·Sheng Lei Zhao, Bin Hou, Wei Wei Chen, Min Han Mi, Jia Xin Zheng, Jin Cheng Zhang, Hua Xiao, Yue Hao	2015	35
8	Enhanced quasi-BIC refractive index sensing based on controlling the Fermi energy of Dirac semimetal metasurface Optics & Laser Technology ·Bin Hou, Zhiyou Li, Le He, Zao Yi, Qianju Song, Hua Yang, Yougen Yi, Hailiang Li	2023	34
9	A review of GaN RF devices and power amplifiers for 5G communication applications Fundamental Research ·Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng, Mei Wu, Srabanti Chowdhury, Xiaohua Ma, Yue Hao	2023	33
10	Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs IEEE Transactions on Electron Devices ·Meng Zhang, Xiaohua Ma, Ling Yang, Minhan Mi, Bin Hou, Yunlong He, Sheng Wu, Yang Lu, Hengshuang Zhang, Qing Zhu, Jun Yin, Jiafeng Wu, Lin‐An Yang, Yue Hao	2018	32
11	Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Applied Physics Letters ·Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yue Hao	2014	32
12	Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications IEEE Journal of the Electron Devices Society ·Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao	2021	31
13	90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application Applied Physics Letters ·Minhan Mi, Xiaohua Ma, Ling Yang, Bin Hou, Jiejie Zhu, Yunlong He, Meng Zhang, Sheng Wu, Yue Hao	2017	29
14	Enhanced g_mand f_TWith High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge IEEE Electron Device Letters ·Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang, Jiejie Zhu, Qing Zhu, Yang Lu, Meng Zhang, Yunlong He, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2017	28
15	Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis AIP Advances ·Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yue Hao	2014	28
16	The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer IEEE Transactions on Electron Devices ·Ling Yang, Bin Hou, Fuchun Jia, Meng Zhang, Mei Wu, Xuerui Niu, Hao Lu, Chunzhou Shi, Minhan Mi, Qing Zhu, Yang Lu, Xiaohua Ma, Yue Hao	2022	27
17	High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application IEEE Electron Device Letters ·Qian Yu, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Mei Wu, Bin Hou, Fuchun Jia, Fei Guo, Xiaohua Ma, Yue Hao	2023	26
18	General laws of biological invasion based on the sampling of invasive plants in China and the United States Global Ecology and Conservation ·Lei Gao, Bin Hou, Min Cai, Jun Zhai, Wei H. Li, Chang Lian Peng	2018	25
19	Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer Applied Physics Letters ·Sheng Zhang, Wei Ke, Xiaohua Ma, Bin Hou, Guoguo Liu, Yichuan Zhang, Xinhua Wang, Yingkui Zheng, Sen Huang, Yankui Li, Tianmin Lei, Xinyu Liu	2019	25
20	Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Pengfei Wang, Xiaohua Ma, Minhan Mi, Meng Zhang, Jiejie Zhu, Yuwei Zhou, Sheng Wu, Jielong Liu, Ling Yang, Bin Hou, Yue Hao	2021	24

About Bin Hou

Bin Hou is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 186 papers that have together received 1.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (137 papers), Ga2O3 and related materials (76 papers), Semiconductor materials and devices (50 papers), Radio Frequency Integrated Circuit Design (43 papers), Semiconductor Quantum Structures and Devices (25 papers), Silicon Carbide Semiconductor Technologies (25 papers), ZnO doping and properties (24 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). The work is most often cited by research in Condensed Matter Physics (1.4k citations), Electronic, Optical and Magnetic Materials (693 citations), Electrical and Electronic Engineering (1.2k citations), Atomic and Molecular Physics, and Optics (336 citations) and Materials Chemistry (336 citations). Bin Hou has collaborated with scholars based in China, United States and United Kingdom. Frequent co-authors include Xiaohua Ma, Yue Hao, Ling Yang, Meng Zhang, Jiejie Zhu, Minhan Mi, Qing Zhu, Mei Wu, Hao Lu and Lixiang Chen. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Electron Device Letters, AIP Advances and Science China Information Sciences.

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