Menno J. Kappers

8.2k total citations
311 papers, 7.0k citations indexed

About

Menno J. Kappers is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Menno J. Kappers has authored 311 papers receiving a total of 7.0k indexed citations (citations by other indexed papers that have themselves been cited), including 265 papers in Condensed Matter Physics, 159 papers in Electrical and Electronic Engineering and 111 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Menno J. Kappers's work include GaN-based semiconductor devices and materials (264 papers), Semiconductor materials and devices (132 papers) and Semiconductor Quantum Structures and Devices (97 papers). Menno J. Kappers is often cited by papers focused on GaN-based semiconductor devices and materials (264 papers), Semiconductor materials and devices (132 papers) and Semiconductor Quantum Structures and Devices (97 papers). Menno J. Kappers collaborates with scholars based in United Kingdom, United States and Ireland. Menno J. Kappers's co-authors include C. J. Humphreys, Rachel A. Oliver, P. Dawson, M. A. Moram, J. S. Barnard, M. E. Vickers, Fabien Massabuau, T. M. Smeeton, C. McAleese and Ranjan Datta and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nano Letters.

In The Last Decade

Menno J. Kappers

299 papers receiving 6.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Menno J. Kappers United Kingdom 46 5.5k 2.8k 2.6k 2.5k 2.2k 311 7.0k
B. Daudin France 46 5.7k 1.0× 3.4k 1.2× 2.8k 1.1× 2.1k 0.9× 2.7k 1.2× 321 7.4k
A. Trampert Germany 49 6.0k 1.1× 5.7k 2.0× 3.8k 1.4× 3.3k 1.3× 3.9k 1.8× 369 10.3k
J. Christen Germany 40 3.1k 0.6× 3.1k 1.1× 2.7k 1.0× 2.6k 1.1× 1.7k 0.8× 263 5.9k
Lucia Romano United States 41 3.9k 0.7× 2.6k 0.9× 1.6k 0.6× 2.4k 1.0× 1.8k 0.8× 182 6.3k
Z. Liliental‐Weber United States 46 4.7k 0.9× 3.2k 1.1× 3.6k 1.4× 4.4k 1.8× 2.2k 1.0× 321 8.1k
A. Krost Germany 50 5.2k 1.0× 4.6k 1.6× 2.9k 1.1× 4.5k 1.8× 3.0k 1.4× 323 9.4k
B. Beaumont France 41 5.2k 0.9× 2.6k 0.9× 1.7k 0.7× 2.7k 1.1× 2.9k 1.3× 229 6.2k
E. Monroy France 46 6.4k 1.2× 3.8k 1.3× 3.3k 1.2× 3.3k 1.3× 4.2k 1.9× 347 9.3k
Zlatko Sitar United States 54 7.5k 1.4× 4.1k 1.5× 1.7k 0.7× 4.0k 1.6× 4.2k 1.9× 389 9.9k
A. Dadgar Germany 46 5.2k 0.9× 2.9k 1.0× 1.5k 0.6× 3.2k 1.3× 2.9k 1.3× 231 7.0k

Countries citing papers authored by Menno J. Kappers

Since Specialization
Citations

This map shows the geographic impact of Menno J. Kappers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Menno J. Kappers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Menno J. Kappers more than expected).

Fields of papers citing papers by Menno J. Kappers

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Menno J. Kappers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Menno J. Kappers. The network helps show where Menno J. Kappers may publish in the future.

Co-authorship network of co-authors of Menno J. Kappers

This figure shows the co-authorship network connecting the top 25 collaborators of Menno J. Kappers. A scholar is included among the top collaborators of Menno J. Kappers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Menno J. Kappers. Menno J. Kappers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Xu, Xiuyuan, Martin Frentrup, Menno J. Kappers, et al.. (2025). Effect of buffer layer thickness on recombination in zincblende InGaN/GaN quantum wells. Journal of Physics D Applied Physics. 58(47). 475101–475101.
2.
Cuenca, Jerome A., Menno J. Kappers, Soumen Mandal, et al.. (2025). Microwave plasma modelling for thick diamond deposition on III-nitrides. Carbon. 241. 120349–120349. 1 indexed citations
3.
Oliver, Rachel A., Martin Frentrup, Menno J. Kappers, et al.. (2025). Beyond transmission electron microscopy imaging: Atom probe tomography reveals chemical inhomogeneity at stacking fault interfaces in InGaN/GaN light-emitting diodes. Materialia. 40. 102417–102417. 1 indexed citations
4.
Fairclough, Simon M., et al.. (2024). Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN. Journal of Applied Physics. 136(4). 1 indexed citations
5.
Hadden, John P., et al.. (2024). Room temperature quantum emitters in aluminum nitride epilayers on silicon. Applied Physics Letters. 124(24).
6.
Kappers, Menno J., et al.. (2023). Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. Ultramicroscopy. 254. 113833–113833. 4 indexed citations
7.
Wahl, U., J. G. Correia, Menno J. Kappers, et al.. (2022). Direct evidence of Be as an amphoteric dopant in GaN. Physical review. B.. 105(18). 3 indexed citations
8.
Frentrup, Martin, Simon M. Fairclough, Menno J. Kappers, et al.. (2020). Alloy segregation at stacking faults in zincblende GaN heterostructures. Journal of Applied Physics. 128(14). 16 indexed citations
9.
Massabuau, Fabien, Matthew K. Horton, Simon Hammersley, et al.. (2019). Optical and structural properties of dislocations in InGaN. Journal of Applied Physics. 125(16). 10 indexed citations
10.
Mandal, Soumen, Evan L. H. Thomas, Laia Ginés, et al.. (2017). Surface Zeta Potential and Diamond Seeding on Gallium Nitride Films. ACS Omega. 2(10). 7275–7280. 34 indexed citations
11.
Zhu, Tongtong, David Gachet, Fengzai Tang, et al.. (2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Applied Physics Letters. 109(23). 9 indexed citations
12.
Griffiths, James T., Fabrice Oehler, Fengzai Tang, et al.. (2016). The microstructure of non-polar a-plane (112¯0) InGaN quantum wells. Journal of Applied Physics. 119(17). 20 indexed citations
13.
Tang, Fengzai, Tongtong Zhu, Fabrice Oehler, et al.. (2015). Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography. Applied Physics Letters. 106(7). 42 indexed citations
14.
Tang, Fengzai, J. S. Barnard, Tongtong Zhu, et al.. (2015). Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates. Applied Physics Letters. 107(8). 5 indexed citations
15.
Wallace, Manolis, P. R. Edwards, Menno J. Kappers, et al.. (2015). Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics. 117(11). 115705–115705. 8 indexed citations
16.
Davies, Matthew, P. Dawson, Fabien Massabuau, et al.. (2014). A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures. physica status solidi (b). 252(5). 866–872. 18 indexed citations
17.
Fu, Wai Yuen, M. A. Moram, Fabien Massabuau, et al.. (2014). Structure and strain relaxation effects of defects in InxGa1−xN epilayers. Journal of Applied Physics. 116(10). 45 indexed citations
18.
Davies, Matthew, T. J. Badcock, P. Dawson, et al.. (2013). InGaN/GaN量子井戸構造の高励起キャリア密度再結合ダイナミクス:効率低下の可能な関連性. Applied Physics Letters. 102(2). 22106–22106. 2 indexed citations
19.
Datta, Ranjan, Menno J. Kappers, M. E. Vickers, J. S. Barnard, & C. J. Humphreys. (2004). Growth and characterisation of GaN with reduced dislocation density. Superlattices and Microstructures. 36(4-6). 393–401. 77 indexed citations
20.
Kappers, Menno J., et al.. (1997). Ligand exchange reactions in organometallic vapor phase epitaxy. Journal of Electronic Materials. 26(10). 1169–1173. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by B. Daudin Breakdown of academic impact, for papers by A. Trampert Breakdown of academic impact, for papers by J. Christen Breakdown of academic impact, for papers by Lucia Romano Breakdown of academic impact, for papers by Z. Liliental‐Weber Breakdown of academic impact, for papers by A. Krost Breakdown of academic impact, for papers by B. Beaumont Breakdown of academic impact, for papers by E. Monroy Breakdown of academic impact, for papers by Zlatko Sitar Breakdown of academic impact, for papers by A. Dadgar
Rankless by CCL
2026