D. S. Rawal

887 citations

83 papers · 619 indexed · h-index 15

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 60
- GaN-based semiconductor devices and materials 60
Electrical and Electronic Engineering 67
- Semiconductor materials and devices 33
- Silicon Carbide Semiconductor Technologies 20
- Advancements in Semiconductor Devices and Circuit Design 12
- Radio Frequency Integrated Circuit Design 11

Co-authors: Seema Vinayak Manoj Saxena R. Muralidharan Hitendra K. Malik Meena Mishra Khushwant Sehra Mridula Gupta Amitava DasGupta
Journals: Semiconductor Science and Technology (6 papers)IEEE Transactions on Electron Devices (5 papers)Microelectronics Reliability (3 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)Vacuum (2 papers)
Partner nations: India

In The Last Decade

D. S. Rawal

76 papers receiving 584 citations

Peers

Countries citing papers authored by D. S. Rawal

Since Specialization

Citations

This map shows the geographic impact of D. S. Rawal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. S. Rawal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. S. Rawal more than expected).

Fields of papers citing papers by D. S. Rawal

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. S. Rawal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. S. Rawal. The network helps show where D. S. Rawal may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. S. Rawal, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. S. Rawal Line = papers co-authored together D. S. Rawal links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Optimized ALD-ZnO Thin Films for High-Performance 12 μm Pixel Microbolometers: Fabrication, Simulation, and Design Strategies for Infrared Sensing ACS Applied Electronic Materials ·Bhavya Padha, Zahoor Ahmed, Naresh Padha, D. S. Rawal, M. A. Gonzalez Peendes, Sandeep Arya	2025	1
2	Optimization of 150 nm GaN HEMT for Ku-band applications using field plate engineering Micro and Nanostructures ·R. Lepp, Rakhi Narang, D. S. Rawal, Meena Mishra, Manoj Saxena, Mridula Gupta	2024	3
3	Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects Physica Scripta ·N. Katičić, Ana Grabovac, Sudhir Kumar, D. S. Rawal, Meena Mishra, Santanu Ghosh	2024	0
4	Impact of Graded AlGaN Buffer Layer Thickness on the DC, RF, Linearity, Intermodulation and Off-State Breakdown Characteristics of AlGaN Channel HEMT IETE Technical Review ·R. Lepp, Rakhi Narang, D. S. Rawal, Meena Mishra, Manoj Saxena, Mridula Gupta	2024	2
5	Effect of compositionally co-related and orderly varying indium molar content on the performance of In0.15Ga0.85N/InxGa(1−x)N laser diode structure Optical and Quantum Electronics ·Lucia M. Licher, 裕之正本, João Calvino Soares de Oliveira, D. S. Rawal, Ashok Chauhan, Kuldip Singh, Elena L Ilyina	2024	0
6	Investigating single-event effects in recess gate GaN/AlN p-channel HEMTs for radiation-hardened application Journal of Computational Electronics ·田中政彰, Vandana Kumari, D. S. Rawal, Manoj Saxena	2024	0
7	Strategic enhancement of oxygen defects in ZnO from ZnS for water splitting to generate green electricity by hydroelectric cell Applied Materials Today ·Herviani Herviani, Jyoti Shah, Anurag Gaur, Satish Khasa, D. S. Rawal, T. K. Mandal, Avinash K. Srivastava, R. K. Kotnala	2023	15
8	Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors Applied Physics A ·R. Lepp, Khushwant Sehra, 田中政彰, Shohibus Tsani, Rakhi Narang, D. S. Rawal, Meena Mishra, Manoj Saxena, Mridula Gupta	2023	3
9	Effect of metallurgical step-graded quantum barrier on the performance of InGaN-based laser diode Laser Physics ·Lucia M. Licher, 裕之正本, G. Lempfuhl, João Calvino Soares de Oliveira, D. S. Rawal, Ashok Chauhan, Kuldip Singh, Elena L Ilyina	2023	3
10	Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications Journal of Physics D Applied Physics ·Khushwant Sehra, R. Lepp, 田中政彰, Santad Wichienchot, Vandana Kumari, Mridula Gupta, Meena Mishra, D. S. Rawal, Manoj Saxena	2023	4
11	Physical insights into the reliability of sunken source connected field plate GaN HEMTs for mm-wave applications Microelectronics Reliability ·田中政彰, Santad Wichienchot, Khushwant Sehra, Abu Noman Sakib, I. Senaffe, Meena Mishra, D. S. Rawal, Manoj Saxena	2023	2
12	Trap analysis on Pt-AlGaN/GaN Schottky barrier diode through deep level transient spectroscopy Journal of Semiconductors ·Ashish Kumar, Ana Grabovac, D. S. Rawal, K. Asokan, D. Kanjilal	2023	1
13	Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier Semiconductor Science and Technology ·Adrianne Gardner Malan, Khushwant Sehra, Meena Mishra, D. S. Rawal, Mridula Gupta, Manoj Saxena	2021	11
14	Impact of heavy ion particle strike induced single event transients on conventional and π -Gate AlGaN/GaN HEMTs Semiconductor Science and Technology ·Khushwant Sehra, Vandana Kumari, Mridula Gupta, Meena Mishra, D. S. Rawal, Manoj Saxena	2021	14
15	Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ -ray irradiation Semiconductor Science and Technology ·Isa Pickett, Chandan Sharma, 田中政彰, D. S. Rawal, Seema Vinayak, Manoj Saxena	2021	3
16	Nanoscale material parameters based modeling of thermal noise in GaN HEMTs Semiconductor Science and Technology ·Jai-Chul Song, Santad Wichienchot, Stefan Smans, Sasan Hassani Barbin, Modigari Narendra, Neelu Jain, Meena Mishra, Sanjeev Kumar, D. S. Rawal, Arun Kumar Singh	2020	2
17	Investigation of Single Event Transients in Buffer-Free GaN-on-SiC HEMT Adrianne Gardner Malan, Khushwant Sehra, Meena Mishra, D. S. Rawal, Mridula Gupta, Manoj Saxena	2020	2
18	Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure Semiconductor Science and Technology ·Isa Pickett, Abu Noman Sakib, J. CharvĂĄt, D. S. Rawal, Seema Vinayak, Manoj Saxena	2019	16
19	The Physics of Semiconductor Devices Springer eBooks ·Rakesh K. Sharma, D. S. Rawal	2019	1
20	Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl₂/BCl₃-Based Inductively Coupled Plasma Plasma Science and Technology ·D. S. Rawal, P Toni, Saidgwl Saida Ali, Hitendra K. Malik	2011	17

About D. S. Rawal

D. S. Rawal is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 83 papers that have together received 619 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (60 papers), Semiconductor materials and devices (33 papers), Silicon Carbide Semiconductor Technologies (20 papers), Semiconductor Quantum Structures and Devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers), Radio Frequency Integrated Circuit Design (11 papers), Ga2O3 and related materials (11 papers) and ZnO doping and properties (9 papers). The work is most often cited by research in Condensed Matter Physics (424 citations), Electronic, Optical and Magnetic Materials (164 citations), Electrical and Electronic Engineering (474 citations), Atomic and Molecular Physics, and Optics (169 citations) and Materials Chemistry (153 citations). D. S. Rawal has collaborated with scholars based in India. Frequent co-authors include Seema Vinayak, Manoj Saxena, R. Muralidharan, Hitendra K. Malik, Meena Mishra, Khushwant Sehra, Mridula Gupta, Amitava DasGupta, Chandan Sharma and Sreenidhi Turuvekere. Their work appears in journals such as Semiconductor Science and Technology, IEEE Transactions on Electron Devices, Microelectronics Reliability, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Vacuum.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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