M. A. Py

1.9k total citations
53 papers, 1.3k citations indexed

About

M. A. Py is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, M. A. Py has authored 53 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Atomic and Molecular Physics, and Optics, 37 papers in Electrical and Electronic Engineering and 22 papers in Condensed Matter Physics. Recurrent topics in M. A. Py's work include Semiconductor Quantum Structures and Devices (28 papers), Semiconductor materials and devices (22 papers) and GaN-based semiconductor devices and materials (22 papers). M. A. Py is often cited by papers focused on Semiconductor Quantum Structures and Devices (28 papers), Semiconductor materials and devices (22 papers) and GaN-based semiconductor devices and materials (22 papers). M. A. Py collaborates with scholars based in Switzerland, Germany and France. M. A. Py's co-authors include N. Grandjean, M. Gonschorek, E. Feltin, J.‐F. Carlin, K. Maschke, Farid Medjdoub, E. Kohn, J.‐F. Carlin, Ph. Schmid and Christophe Gaquière and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

M. A. Py

50 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. A. Py Switzerland 18 892 738 458 432 333 53 1.3k
V.P. Kladko Ukraine 18 340 0.4× 677 0.9× 359 0.8× 381 0.9× 736 2.2× 181 1.3k
Weijin Qian China 18 588 0.7× 567 0.8× 461 1.0× 465 1.1× 842 2.5× 46 1.4k
G.C. Chi Taiwan 21 1.1k 1.2× 808 1.1× 658 1.4× 353 0.8× 1.0k 3.1× 47 1.8k
R. Armitage United States 16 906 1.0× 399 0.5× 534 1.2× 284 0.7× 764 2.3× 45 1.4k
K. M. Jones United States 21 395 0.4× 554 0.8× 317 0.7× 472 1.1× 493 1.5× 50 1.2k
A. Kasic Germany 16 1.0k 1.1× 707 1.0× 712 1.6× 487 1.1× 1.1k 3.2× 41 1.8k
Ji‐Myon Lee South Korea 19 431 0.5× 713 1.0× 335 0.7× 211 0.5× 704 2.1× 78 1.2k
W. Richter Germany 20 473 0.5× 573 0.8× 292 0.6× 256 0.6× 506 1.5× 70 1.2k
R. Stępniewski Poland 21 919 1.0× 786 1.1× 543 1.2× 698 1.6× 1.2k 3.7× 98 2.0k
Junwu Liang China 19 333 0.4× 685 0.9× 278 0.6× 237 0.5× 718 2.2× 67 1.2k

Countries citing papers authored by M. A. Py

Since Specialization
Citations

This map shows the geographic impact of M. A. Py's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. A. Py with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. A. Py more than expected).

Fields of papers citing papers by M. A. Py

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. A. Py. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. A. Py. The network helps show where M. A. Py may publish in the future.

Co-authorship network of co-authors of M. A. Py

This figure shows the co-authorship network connecting the top 25 collaborators of M. A. Py. A scholar is included among the top collaborators of M. A. Py based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. A. Py. M. A. Py is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lugani, Lorenzo, M. A. Py, J.‐F. Carlin, & N. Grandjean. (2016). Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN. Applied Physics Letters. 109(15). 4 indexed citations
2.
Py, M. A., Lorenzo Lugani, Yoshitaka Taniyasu, J.‐F. Carlin, & N. Grandjean. (2015). Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen. Journal of Applied Physics. 117(18). 10 indexed citations
3.
Lugani, Lorenzo, M. A. Py, J.‐F. Carlin, & N. Grandjean. (2014). Leakage mechanisms in InAlN based heterostructures. Journal of Applied Physics. 115(7). 30 indexed citations
4.
Py, M. A., et al.. (2014). Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN. Physical Review B. 90(11). 16 indexed citations
5.
Medjdoub, Farid, J.‐F. Carlin, M. Gonschorek, et al.. (2007). Barrier layer downscaling of InAIN/GaN HEMTs. HAL (Le Centre pour la Communication Scientifique Directe). 109–110. 8 indexed citations
6.
Medjdoub, Farid, J.‐F. Carlin, M. Gonschorek, et al.. (2006). Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?. HAL (Le Centre pour la Communication Scientifique Directe). 1–4. 139 indexed citations
7.
Medjdoub, Farid, J.‐F. Carlin, M. Gonschorek, et al.. (2006). Small-signal characteristics of AlInN/GaN HEMTs. Electronics Letters. 42(13). 779–780. 33 indexed citations
8.
Gonschorek, M., J.‐F. Carlin, E. Feltin, M. A. Py, & N. Grandjean. (2006). High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures. Applied Physics Letters. 89(6). 268 indexed citations
9.
Souifi, A., et al.. (2003). Influence of deep levels in AlInAs/GalnAs/InP HFETs. 95. 487–490.
10.
Letartre, Xavier, P. Rojo-Roméo, M. Bejar, et al.. (1999). Influence of Strain Compensation on Structural and Electrical Properties of InAlAs/InGaAs HEMT Structures Grown on InP. Japanese Journal of Applied Physics. 38(2S). 1169–1169. 3 indexed citations
11.
Souifi, A., et al.. (1999). Study of the kink effect in AlInAs/GaInAs/InP composite channel HFETs. Journal of Materials Science Materials in Electronics. 10(5-6). 419–423. 5 indexed citations
12.
Py, M. A., et al.. (1998). New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs. IEEE Electron Device Letters. 19(5). 154–156. 19 indexed citations
13.
Peiró, F., et al.. (1997). Well surface roughness and fault density effects on the Hall mobility of InxGa1−xAs/InyAl1−yAs/InP high electron mobility transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(5). 1715–1723. 7 indexed citations
14.
Moreira, M. V. B., A. G. de Oliveira, & M. A. Py. (1996). Photo-Hall studies of modulation-doped field-effect transistors with short-period superlattice channels rather than alloy channels. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(5). 3350–3356. 1 indexed citations
15.
16.
Py, M. A., et al.. (1994). Analytical modeling of modfet transfer characteristics at low drain bias by taking into account the dependence of mobility on 2d electron gas concentration. Brazilian Journal of Physics. 24(2). 491–497. 2 indexed citations
17.
Shi, Zhan, M. A. Py, H.‐J. Bühlmann, & M. Ilegems. (1993). DC Characterization and Low-Frequency Noise in δ-, Pulse- and Uniformly-doped GaAs/AIGaAs MODFETs. European Solid-State Device Research Conference. 447–450. 1 indexed citations
18.
Moreira, M. V. B., M. A. Py, M. Gailhanou, & M. Ilegems. (1992). Electrical characterization of pseudomorphic GaAs/InGaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs modulation doped field effect transistor-type heterostructures grown by molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(1). 103–109. 9 indexed citations
19.
Bühlmann, H.‐J., R. Houdré, M. Ilegems, et al.. (1991). Properties of alloyed AuGeNi-contacts on GaAs/Ga/AlAs-heterostructures. IEEE Transactions on Instrumentation and Measurement. 40(2). 228–230. 13 indexed citations
20.
Jeckelmann, B., et al.. (1991). Comparison of the quantized hall resistance in different GaAs/Al/sub x/Ga/sub 1-x/As heterostructures. IEEE Transactions on Instrumentation and Measurement. 40(2). 231–233. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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