B. Sverdlov

5.0k citations

86 papers · 4.1k indexed · 1 hit paper · h-index 24

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 26
- GaN-based semiconductor devices and materials 26
Atomic and Molecular Physics, and Optics 56
- Semiconductor Quantum Structures and Devices 47

Co-authors: H. Morkoç̌Mao Lin Guangjun Gao S. Strite A. Botchkarev A. Salvador P G Eliseev A. P. Bogatov
Journals: Applied Physics Letters (13 papers)Electronics Letters (7 papers)IEEE Journal of Quantum Electronics (5 papers)Journal of Applied Physics (4 papers)Journal of Russian Laser Research (2 papers)
Partner nations: United States Russia Sweden

In The Last Decade

B. Sverdlov

77 papers receiving 3.9k citations

Hit Papers

align trajectories log scale

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies 1994 · 2.3k citations

Peers

Countries citing papers authored by B. Sverdlov

Since Specialization

Citations

This map shows the geographic impact of B. Sverdlov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Sverdlov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Sverdlov more than expected).

Fields of papers citing papers by B. Sverdlov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Sverdlov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Sverdlov. The network helps show where B. Sverdlov may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Sverdlov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Sverdlov Line = papers co-authored together B. Sverdlov links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Optimization of fiber coupling in ultra-high power pump modules at λ = 980 nm Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·B. Sverdlov, H. Pfeiffer, E. A. Zibik, S. Mohrdiek, Tomáš Pliška, M. Agresti, N. Lichtenstein	2013	11
2	Broad area single emitter (BASE) modules with improved brightness Susanne Pawlik, B. Sverdlov, Jürgen Müller, R. Bättig, Berthold Schmidt, Hans-Ulrich Pfeiffer, Sebastain Arlt, B. Valk, N. Lichtenstein	2007	4
3	980nm single mode modules yielding 700mW fiber coupled pump power Optical Fiber Communication Conference ·Berthold Schmidt, Susanne Pawlik, N. Matuschek, Jürgen Müller, Tomáš Pliška, J. Troger, Nobert Lichtenstein, Andreas Wittmann, S. Mohrdiek, B. Sverdlov, Christoph Harder	2002	2
4	High-transconductance GaN MODFETs Özgür Aktaş, W. Kim, Z. Fan, Franck Stengel, A. Botchkarev, A. Salvador, B. Sverdlov, S. Noor Mohammad, H. Morkoç̌	2002	5
5	980 nm single mode modules yielding 700 mW fiber coupled pump power Berthold Schmidt, Susanne Pawlik, N. Matuschek, Jürgen Müller, Tomáš Pliška, J. Troger, N. Lichtenstein, Angela Wittmann, S. Mohrdiek, B. Sverdlov, C. Harder	2002	10
6	Highly efficient 980nm single mode modules with over 0.5 Watt pump power Optical Fiber Communication Conference and International Conference on Quantum Information ·Berthold Schmidt, Susanne Pawlik, Bernd Mayer, S. Mohrdiek, Isabella Jung, B. Sverdlov, N. Lichtenstein, N. Matuschek, Christoph Harder	2001	1
7	Stacking mismatch boundaries in GaN: Implications for substrate selection Solid-State Electronics ·David J. Smith, S.-C. Y. Tsen, B. Sverdlov, G. Martin, H. Morkoç̌	1997	10
8	Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN Applied Physics Letters ·K. T. Tsen, R. P. Joshi, D. K. Ferry, A. Botchkarev, B. Sverdlov, A. Salvador, H. Morkoç̌	1996	59
9	Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates Applied Physics Letters ·B. Sverdlov, Glenn A. Martin, H. Morkoç̌, David J. Smith	1995	129
10	Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy Applied Physics Letters ·M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. Sverdlov, A. Botchkarev, H. Morkoç	1995	30
11	GaN based III–V nitrides by molecular beam epitaxy Journal of Crystal Growth ·H. Morkoç̌, A. Botchkarev, A. Salvador, B. Sverdlov	1995	30
12	Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers Proceedings of the IEEE ·H. Morkoç̌, B. Sverdlov, Guangjun Gao	1993	50
13	A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy Applied Physics Letters ·Mao Lin, B. Sverdlov, Guoqing Zhou, H. Morkoç̌	1993	119
14	Thermal resistivity of quaternary solid solutions InGaSbAs and GaAlSbAs lattice-matched to GaSb Electronics Letters ·W. Both, Andrey Bochkarev, A E Drakin, B. Sverdlov	1990	7
15	Influence of anisotropic deformation on the radiative characteristics of GaInAsP/InP injection lasers. I. Lasing threshold, polarization, and watt-ampere characteristic Soviet Journal of Quantum Electronics ·P G Eliseev, B. Sverdlov, И. Исмаилов, N Shokhudzhaev	1986	7
16	Reduction of the threshold current of InGaAsP/lnP heterolasers by unidirectional compression Soviet Journal of Quantum Electronics ·P G Eliseev, B. Sverdlov, N Shokhudzhaev	1984	10
17	Operational lifetime characteristics of GaInPAs/InP heterostructures V V Bezotosnyĭ, V P Duraev, P G Eliseev, E T Nedelin, B. Sverdlov, G V Shepekina, I. N. Shishkin	1981	0
18	Service life of GalnPAs/lnP heterostructures Soviet Journal of Quantum Electronics ·V V Bezotosnyĭ, V P Duraev, P G Eliseev, E T Nedelin, B. Sverdlov, G V Shepekina, I. N. Shishkin	1981	1
19	New uncooled injection heterolaser emitting in the 1.5–1.8 μ range Soviet Journal of Quantum Electronics ·L. M. Dolginov, L. V. Druzhinina, P G Eliseev, M. G. Mil’vidskiĭ, B. Sverdlov	1976	8
20	Luminescence and stimulated emission from Ga_xln_1–xAs_ySb_1–y Soviet Journal of Quantum Electronics ·L. M. Dolginov, L. V. Druzhinina, Petr G. Eliseev, I V Kryukova, V I Leskovich, M. G. Mil’vidskiĭ, B. Sverdlov, В. А. Чапнин	1976	4

About B. Sverdlov

B. Sverdlov is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Instrumentation, having authored 86 papers that have together received 4.1k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (47 papers), Semiconductor Lasers and Optical Devices (44 papers), GaN-based semiconductor devices and materials (26 papers), Photonic and Optical Devices (23 papers), Semiconductor materials and devices (14 papers), Advanced Semiconductor Detectors and Materials (13 papers), Solid State Laser Technologies (10 papers) and Ga2O3 and related materials (8 papers). The work is most often cited by research in Condensed Matter Physics (2.3k citations), Electronic, Optical and Magnetic Materials (1.1k citations), Atomic and Molecular Physics, and Optics (1.5k citations), Electrical and Electronic Engineering (2.4k citations) and Materials Chemistry (1.4k citations). B. Sverdlov has collaborated with scholars based in United States, Russia and Sweden. Frequent co-authors include H. Morkoç̌, Mao Lin, Guangjun Gao, S. Strite, A. Botchkarev, A. Salvador, P G Eliseev, A. P. Bogatov, David J. Smith and A E Drakin. Their work appears in journals such as Applied Physics Letters, Electronics Letters, IEEE Journal of Quantum Electronics, Journal of Applied Physics and Journal of Russian Laser Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact