Yuji Zhao

5.2k total citations · 1 hit paper
160 papers, 3.9k citations indexed

About

Yuji Zhao is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yuji Zhao has authored 160 papers receiving a total of 3.9k indexed citations (citations by other indexed papers that have themselves been cited), including 129 papers in Condensed Matter Physics, 81 papers in Electrical and Electronic Engineering and 60 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yuji Zhao's work include GaN-based semiconductor devices and materials (127 papers), Ga2O3 and related materials (58 papers) and Semiconductor Quantum Structures and Devices (44 papers). Yuji Zhao is often cited by papers focused on GaN-based semiconductor devices and materials (127 papers), Ga2O3 and related materials (58 papers) and Semiconductor Quantum Structures and Devices (44 papers). Yuji Zhao collaborates with scholars based in United States, China and Italy. Yuji Zhao's co-authors include Houqiang Fu, Shuji Nakamura, Steven P. DenBaars, Xuanqi Huang, Kai Fu, James S. Speck, Hong Chen, Shinichi Tanaka, Kenji Fujito and Chih‐Chien Pan and has published in prestigious journals such as Advanced Materials, Nature Communications and Nano Letters.

In The Last Decade

Yuji Zhao

149 papers receiving 3.7k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

2013 361 citations Yuji Zhao et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Yuji Zhao United States	34	3.0k	1.9k	1.6k	1.4k	1.4k	160	3.9k
Ü. Özgür United States	30	2.0k 0.7×	1.9k 1.0×	1.8k 1.1×	1.2k 0.8×	2.4k 1.8×	143	4.1k
Daniel Feezell United States	34	3.0k 1.0×	1.7k 0.9×	1.1k 0.7×	1.8k 1.3×	1.3k 1.0×	113	3.8k
Hyunsoo Kim South Korea	33	1.9k 0.6×	2.1k 1.1×	1.2k 0.8×	834 0.6×	1.7k 1.3×	203	3.8k
Y.K. Su Taiwan	33	2.5k 0.8×	1.9k 1.0×	1.1k 0.7×	1.2k 0.9×	1.9k 1.4×	145	3.9k
Yongjo Park South Korea	31	3.7k 1.2×	2.0k 1.0×	1.4k 0.9×	2.1k 1.5×	2.0k 1.5×	118	4.8k
Martin Straßburg Germany	33	2.3k 0.8×	2.1k 1.1×	2.3k 1.5×	982 0.7×	3.6k 2.6×	148	5.0k
Masahiko Sano Japan	25	3.4k 1.1×	1.4k 0.7×	1.3k 0.8×	1.6k 1.2×	1.6k 1.2×	44	4.0k
Akihiro Hashimoto Japan	26	2.5k 0.8×	972 0.5×	1.3k 0.9×	1.3k 0.9×	1.7k 1.3×	185	3.6k
Zhibiao Hao China	29	1.4k 0.5×	1.6k 0.9×	623 0.4×	1.3k 0.9×	935 0.7×	234	2.9k
Asif Khan United States	27	2.5k 0.8×	1.2k 0.6×	1.5k 1.0×	560 0.4×	1.1k 0.8×	127	3.1k

Countries citing papers authored by Yuji Zhao

Since Specialization

Citations

This map shows the geographic impact of Yuji Zhao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuji Zhao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuji Zhao more than expected).

Fields of papers citing papers by Yuji Zhao

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuji Zhao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuji Zhao. The network helps show where Yuji Zhao may publish in the future.

Co-authorship network of co-authors of Yuji Zhao

This figure shows the co-authorship network connecting the top 25 collaborators of Yuji Zhao. A scholar is included among the top collaborators of Yuji Zhao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuji Zhao. Yuji Zhao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Niroula, John, Qingyun Xie, Minsik Oh, et al.. (2025). High Temperature AlGaN/GaN MISHEMT With W/AlON Gate Stack and I _max>1 A/mm at 500 ^∘C. IEEE Electron Device Letters. 46(9). 1477–1480.

Zhao, Yuji, et al.. (2025). Tuning Metal-Phthalocyanine 2D Covalent Organic Frameworks for the Nitrogen Reduction Reaction: Cooperativity of Transition Metals and Organic Linkers. ACS Applied Materials & Interfaces. 17(8). 12156–12168. 4 indexed citations

Niroula, John, et al.. (2024). Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. 1–2. 1 indexed citations

Chang, Cheng, et al.. (2024). GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C. 1–2.

Zhang, Xiang, Tanguy Terlier, Dinusha Herath Mudiyanselage, et al.. (2024). Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric. Applied Physics Letters. 125(4). 8 indexed citations

Rampazzo, Fabiana, Carlo De Santi, Matteo Buffolo, et al.. (2023). Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells. IEEE Journal of Photovoltaics. 13(6). 891–898. 1 indexed citations

Santi, Carlo De, Matteo Buffolo, Xuanqi Huang, et al.. (2023). Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance. IEEE Transactions on Electron Devices. 70(7). 3624–3629.

Ghosh, Subhajit, Dinusha Herath Mudiyanselage, Sergey Rumyantsev, et al.. (2023). Low-frequency noise in β-(Al x Ga1 −x )2O3 Schottky barrier diodes. Applied Physics Letters. 122(21). 7 indexed citations

Fu, Kai, Qingyun Xie, Mengyang Yuan, et al.. (2023). Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments. Applied Physics Letters. 123(24). 7 indexed citations

10.

Yuan, Mengyang, John Niroula, Qingyun Xie, et al.. (2023). Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation. IEEE Electron Device Letters. 44(7). 1068–1071. 25 indexed citations

11.

Yuan, Mengyang, Qingyun Xie, Kai Fu, et al.. (2022). GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform. IEEE Electron Device Letters. 43(11). 1842–1845. 24 indexed citations

12.

Santi, Carlo De, Matteo Buffolo, Xuanqi Huang, et al.. (2022). Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling. Journal of Applied Physics. 131(22). 6 indexed citations

13.

Yang, Chen, Houqiang Fu, Kai Fu, et al.. (2021). Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension. Semiconductor Science and Technology. 36(7). 75009–75009. 8 indexed citations

14.

Fu, Kai, et al.. (2021). Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices. Journal of Electronic Materials. 50(5). 2637–2642. 5 indexed citations

15.

Fu, Kai, Xin Qi, Houqiang Fu, et al.. (2020). Characterization of MOCVD regrown p -GaN and the interface properties for vertical GaN power devices. Semiconductor Science and Technology. 36(1). 14005–14005. 6 indexed citations

16.

Fu, Kai, et al.. (2020). Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(6). 6 indexed citations

17.

Liu, Hanxiao, et al.. (2019). Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics. Applied Physics Letters. 114(8). 24 indexed citations

18.

Chen, Hong, Jingan Zhou, Houqiang Fu, Xuanqi Huang, & Yuji Zhao. (2019). Study of Crystalline Defect Induced Optical Scattering Loss inside AlN Waveguides in UV-Visible Spectral Wavelengths. Conference on Lasers and Electro-Optics. 8749725.

19.

Fu, Houqiang, Kai Fu, Hanxiao Liu, et al.. (2019). Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes. Applied Physics Letters. 115(20). 12 indexed citations

20.

Fu, Houqiang, et al.. (2019). Dopant profiling in p-i-n GaN structures using secondary electrons. Journal of Applied Physics. 126(1). 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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