Hisayoshi Matsuo

1.5k citations

12 papers · 1.3k indexed · 1 hit paper · h-index 11

Condensed Matter Physics top 1%
Electrical and Electronic Engineering top 5%
Electronic, Optical and Magnetic Materials top 5%
Materials Chemistry
Atomic and Molecular Physics, and Optics top 10%

Co-authors: Yasuhiro Uemoto Manabu Yanagihara Tetsuzo Ueda Hidetoshi Ishida Masahiro Hikita Tsuyoshi Tanaka Daisuke Ueda Hiroaki Ueno
Topics: GaN-based semiconductor devices and materials (10 papers)Silicon Carbide Semiconductor Technologies (6 papers)Ga2O3 and related materials (5 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Transactions on Electron Devices Japanese Journal of Applied Physics IEEE Electron Device Letters
Partner nations: Japan United States Italy

In The Last Decade

Hisayoshi Matsuo

12 papers receiving 1.2k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

2007 826 citations Yasuhiro Uemoto, Masahiro Hikita et al. IEEE Transactions on Electron Devices profile →

Peers

Countries citing papers authored by Hisayoshi Matsuo

Since Specialization

Citations

This map shows the geographic impact of Hisayoshi Matsuo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hisayoshi Matsuo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hisayoshi Matsuo more than expected).

Fields of papers citing papers by Hisayoshi Matsuo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hisayoshi Matsuo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hisayoshi Matsuo. The network helps show where Hisayoshi Matsuo may publish in the future.

Co-authorship network of co-authors of Hisayoshi Matsuo

This figure shows the co-authorship network connecting the top 25 collaborators of Hisayoshi Matsuo. A scholar is included among the top collaborators of Hisayoshi Matsuo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hisayoshi Matsuo. Hisayoshi Matsuo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

#	Work	Indexed citations
1	Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors 2017 ·IEEE Transactions on Electron Devices ·Hideyuki Okita,Masahiro Hikita,(unknown),Takahiro Satô,(unknown),Hisayoshi Matsuo,(unknown),M. Mannoh,(unknown),Masayuki Kuroda,Manabu Yanagihara,Ayanori Ikoshi,Tatsuo Morita,Kenichiro Tanaka,Yasuhiro Uemoto	24
2	Through recessed and regrowth gate technology for realizing process stability of GaN-GITs 2016 ·Hideyuki Okita,Masahiro Hikita,(unknown),Takahiro Satô,(unknown),Hisayoshi Matsuo,M. Mannoh,Yasuhiro Uemoto	34
3	GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate 2009 ·Yasuhiro Uemoto,Tatsuo Morita,Ayanori Ikoshi,Hidekazu Umeda,Hisayoshi Matsuo,Jun Shimizu,Masahiro Hikita,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	73
4	Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor 2008 ·IEEE Electron Device Letters ·Hidetoshi Ishida,Daisuke Shibata,Manabu Yanagihara,Yasuhiro Uemoto,Hisayoshi Matsuo,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	50
5	GaN-based natural super junction diodes with multi-channel structures 2008 ·Hidetoshi Ishida,Daisuke Shibata,Hisayoshi Matsuo,Manabu Yanagihara,Yasuhiro Uemoto,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	40
6	650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor 2007 ·Tatsuo Morita,Manabu Yanagihara,Hidetoshi Ishida,Masahiro Hikita,Kazuhiro Kaibara,Hisayoshi Matsuo,Yasuhiro Uemoto,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	81
7	8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation 2007 ·Yasuhiro Uemoto,Daisuke Shibata,Manabu Yanagihara,Hidetoshi Ishida,Hisayoshi Matsuo,(unknown),(unknown),Ming Li,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	82
8	Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique 2007 ·IEICE Electronics Express ·(unknown),Hisayoshi Matsuo,(unknown),Tetsuzo Ueda,Kaoru Inoue,Daisuke Ueda	13
9	Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulationbreakdown → 2007 ·IEEE Transactions on Electron Devices ·Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	826
10	A Normally-off AlGaN/GaN Transistor with R<sub>on</sub>A=2.6m&#x003A9;cm<sup>2</sup> and BV<sub>ds</sub>=640V Using Conductivity Modulation 2006 ·Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	44
11	Possibility of High Deposition Rate in SmBa₂Cu₃O_y Films Prepared Using the Vapor–Liquid–Solid Growth Mode 2006 ·Japanese Journal of Applied Physics ·Yusuke Ichino,Hisayoshi Matsuo,Yutaka Yoshida,Yoshiaki Takai,Kaname Matsumoto,M. Mukaida,Ataru Ichinose,Shigeru Horii	12
12	Improvement of Superconductivity in High Critical Temperature LaBa₂Cu₃O_yFilms Grown by Vapor-Liquid-Solid Mode 2003 ·Japanese Journal of Applied Physics ·Yusuke Ichino,Hisayoshi Matsuo,(unknown),Yutaka Yoshida,Yoshiaki Takai	8

About Hisayoshi Matsuo

Hisayoshi Matsuo is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 12 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (10 papers), Silicon Carbide Semiconductor Technologies (6 papers) and Ga2O3 and related materials (5 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electronic, Optical and Magnetic Materials (581 citations) and Electrical and Electronic Engineering (982 citations). Hisayoshi Matsuo has collaborated with scholars based in Japan, United States and Italy. Frequent co-authors include Yasuhiro Uemoto, Manabu Yanagihara, Tetsuzo Ueda, Hidetoshi Ishida, Masahiro Hikita, Tsuyoshi Tanaka, Daisuke Ueda, Hiroaki Ueno, Daisuke Ueda and Daisuke Shibata. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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