Hisayoshi Matsuo

1.5k citations

12 papers · 1.3k indexed · 1 hit paper · h-index 11

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 10
- Physics of Superconductivity and Magnetism 2
- Superconductivity in MgB2 and Alloys 1
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 5
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies 6
- Semiconductor materials and devices 4
- Advancements in Semiconductor Devices and Circuit Design 1
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 1
Materials Chemistry

Co-authors: Yasuhiro Uemoto Manabu Yanagihara Tetsuzo Ueda Hidetoshi Ishida Masahiro Hikita Tsuyoshi Tanaka Daisuke Ueda Hiroaki Ueno
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Transactions on Electron Devices (2 papers)Japanese Journal of Applied Physics (2 papers)IEEE Electron Device Letters (1 paper)
Partner nations: Japan United States Italy

In The Last Decade

Hisayoshi Matsuo

12 papers receiving 1.2k citations

Hit Papers

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Peers

Countries citing papers authored by Hisayoshi Matsuo

Since Specialization

Citations

This map shows the geographic impact of Hisayoshi Matsuo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hisayoshi Matsuo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hisayoshi Matsuo more than expected).

Fields of papers citing papers by Hisayoshi Matsuo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hisayoshi Matsuo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hisayoshi Matsuo. The network helps show where Hisayoshi Matsuo may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Hisayoshi Matsuo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Hisayoshi Matsuo Line = papers co-authored together Hisayoshi Matsuo links everyone, so they are left out of the graph.

All Works

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12 of 12 papers shown

#	Work
1	Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors IEEE Transactions on Electron Devices ·Hideyuki Okita,Masahiro Hikita,Akihiko Nishio,Takahiro Satô,Keiichi Matsunaga,Hisayoshi Matsuo,Michinobu Tsuda,M. Mannoh,Saichiro Kaneko,Masayuki Kuroda,Manabu Yanagihara,Ayanori Ikoshi,Tatsuo Morita,Kenichiro Tanaka,Yasuhiro Uemoto	2017	24
2	Through recessed and regrowth gate technology for realizing process stability of GaN-GITs Hideyuki Okita,Masahiro Hikita,Akihiko Nishio,Takahiro Satô,Keiichi Matsunaga,Hisayoshi Matsuo,M. Mannoh,Yasuhiro Uemoto	2016	34
3	GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate Yasuhiro Uemoto,Tatsuo Morita,Ayanori Ikoshi,Hidekazu Umeda,Hisayoshi Matsuo,Jun Shimizu,Masahiro Hikita,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	2009	73
4	Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor IEEE Electron Device Letters ·Hidetoshi Ishida,Daisuke Shibata,Manabu Yanagihara,Yasuhiro Uemoto,Hisayoshi Matsuo,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	2008	50
5	GaN-based natural super junction diodes with multi-channel structures Hidetoshi Ishida,Daisuke Shibata,Hisayoshi Matsuo,Manabu Yanagihara,Yasuhiro Uemoto,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	2008	40
6	650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor Tatsuo Morita,Manabu Yanagihara,Hidetoshi Ishida,Masahiro Hikita,Kazuhiro Kaibara,Hisayoshi Matsuo,Yasuhiro Uemoto,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	2007	81
7	8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation Yasuhiro Uemoto,Daisuke Shibata,Manabu Yanagihara,Hidetoshi Ishida,Hisayoshi Matsuo,Shuichi Nagai,Nagaraj Batta,Ming Li,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	2007	82
8	Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique IEICE Electronics Express ·Teruki Ishido,Hisayoshi Matsuo,Takuma Katayama,Tetsuzo Ueda,Kaoru Inoue,Daisuke Ueda	2007	13
9	Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulationbreakdown → IEEE Transactions on Electron Devices ·Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	2007	826
10	A Normally-off AlGaN/GaN Transistor with R<sub>on</sub>A=2.6m&#x003A9;cm<sup>2</sup> and BV<sub>ds</sub>=640V Using Conductivity Modulation Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	2006	44
11	Possibility of High Deposition Rate in SmBa₂Cu₃O_y Films Prepared Using the Vapor–Liquid–Solid Growth Mode Japanese Journal of Applied Physics ·Yusuke Ichino,Hisayoshi Matsuo,Yutaka Yoshida,Yoshiaki Takai,Kaname Matsumoto,M. Mukaida,Ataru Ichinose,Shigeru Horii	2006	12
12	Improvement of Superconductivity in High Critical Temperature LaBa₂Cu₃O_yFilms Grown by Vapor-Liquid-Solid Mode Japanese Journal of Applied Physics ·Yusuke Ichino,Hisayoshi Matsuo,Kimihiko Sudoh,Yutaka Yoshida,Yoshiaki Takai	2003	8

About Hisayoshi Matsuo

Hisayoshi Matsuo is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 12 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (10 papers), Silicon Carbide Semiconductor Technologies (6 papers), Ga2O3 and related materials (5 papers), Semiconductor materials and devices (4 papers), Physics of Superconductivity and Magnetism (2 papers), Advancements in Semiconductor Devices and Circuit Design (1 paper), Superconductivity in MgB2 and Alloys (1 paper) and Semiconductor Quantum Structures and Devices (1 paper). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electronic, Optical and Magnetic Materials (581 citations) and Electrical and Electronic Engineering (982 citations). Hisayoshi Matsuo has collaborated with scholars based in Japan, United States and Italy. Frequent co-authors include Yasuhiro Uemoto, Manabu Yanagihara, Tetsuzo Ueda, Hidetoshi Ishida, Masahiro Hikita, Tsuyoshi Tanaka, Daisuke Ueda, Hiroaki Ueno, Daisuke Ueda and Daisuke Shibata. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

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