Hisayoshi Matsuo

1.5k total citations · 1 hit paper
12 papers, 1.3k citations indexed

About

Hisayoshi Matsuo is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hisayoshi Matsuo has authored 12 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Condensed Matter Physics, 7 papers in Electrical and Electronic Engineering and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hisayoshi Matsuo's work include GaN-based semiconductor devices and materials (10 papers), Silicon Carbide Semiconductor Technologies (6 papers) and Ga2O3 and related materials (5 papers). Hisayoshi Matsuo is often cited by papers focused on GaN-based semiconductor devices and materials (10 papers), Silicon Carbide Semiconductor Technologies (6 papers) and Ga2O3 and related materials (5 papers). Hisayoshi Matsuo collaborates with scholars based in Japan, United States and Italy. Hisayoshi Matsuo's co-authors include Yasuhiro Uemoto, Tetsuzo Ueda, Manabu Yanagihara, Hidetoshi Ishida, Masahiro Hikita, Tsuyoshi Tanaka, Daisuke Ueda, Hiroaki Ueno, Daisuke Ueda and Daisuke Shibata and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Hisayoshi Matsuo

12 papers receiving 1.2k citations

Hit Papers

1 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

2007 826 citations Yasuhiro Uemoto, Masahiro Hikita et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Hisayoshi Matsuo Japan	11	1.2k	982	581	227	179	12	1.3k
Hiroaki Ueno Japan	10	1.0k 0.9×	982 1.0×	508 0.9×	205 0.9×	180 1.0×	19	1.3k
Masahiro Hikita Japan	14	1.4k 1.2×	1.2k 1.3×	624 1.1×	240 1.1×	192 1.1×	19	1.6k
Tsuyoshi Tanaka Japan	5	946 0.8×	811 0.8×	479 0.8×	172 0.8×	145 0.8×	8	1.0k
Daisuke Ueda Japan	6	931 0.8×	815 0.8×	451 0.8×	172 0.8×	148 0.8×	13	1.1k
Sadahiro Kato Japan	11	925 0.8×	763 0.8×	497 0.9×	210 0.9×	120 0.7×	25	1.0k
Manabu Yanagihara Japan	16	1.5k 1.3×	1.5k 1.5×	690 1.2×	250 1.1×	270 1.5×	35	1.8k
Fabiana Rampazzo Italy	15	1.4k 1.2×	1.2k 1.3×	399 0.7×	216 1.0×	353 2.0×	56	1.5k
Brian L. Swenson United States	14	885 0.8×	719 0.7×	483 0.8×	220 1.0×	193 1.1×	24	998
Takehiko Nomura Japan	15	887 0.8×	758 0.8×	483 0.8×	189 0.8×	103 0.6×	29	965
Hiroshi Kambayashi Japan	15	920 0.8×	797 0.8×	500 0.9×	190 0.8×	109 0.6×	34	1.0k

Countries citing papers authored by Hisayoshi Matsuo

Since Specialization

Citations

This map shows the geographic impact of Hisayoshi Matsuo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hisayoshi Matsuo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hisayoshi Matsuo more than expected).

Fields of papers citing papers by Hisayoshi Matsuo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hisayoshi Matsuo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hisayoshi Matsuo. The network helps show where Hisayoshi Matsuo may publish in the future.

Co-authorship network of co-authors of Hisayoshi Matsuo

This figure shows the co-authorship network connecting the top 25 collaborators of Hisayoshi Matsuo. A scholar is included among the top collaborators of Hisayoshi Matsuo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hisayoshi Matsuo. Hisayoshi Matsuo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Okita, Hideyuki, Masahiro Hikita, Takahiro Satô, et al.. (2017). Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors. IEEE Transactions on Electron Devices. 64(3). 1026–1031. 24 indexed citations

Okita, Hideyuki, Masahiro Hikita, Takahiro Satô, et al.. (2016). Through recessed and regrowth gate technology for realizing process stability of GaN-GITs. 23–26. 34 indexed citations

Uemoto, Yasuhiro, Tatsuo Morita, Ayanori Ikoshi, et al.. (2009). GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate. 73 indexed citations

Ishida, Hidetoshi, Daisuke Shibata, Manabu Yanagihara, et al.. (2008). Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor. IEEE Electron Device Letters. 29(10). 1087–1089. 50 indexed citations

Ishida, Hidetoshi, Daisuke Shibata, Hisayoshi Matsuo, et al.. (2008). GaN-based natural super junction diodes with multi-channel structures. 1–4. 40 indexed citations

Morita, Tatsuo, Manabu Yanagihara, Hidetoshi Ishida, et al.. (2007). 650 V 3.1 mΩcm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor. 865–868. 81 indexed citations

Uemoto, Yasuhiro, Daisuke Shibata, Manabu Yanagihara, et al.. (2007). 8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation. 861–864. 82 indexed citations

Matsuo, Hisayoshi, et al.. (2007). Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique. IEICE Electronics Express. 4(24). 775–781. 13 indexed citations

Uemoto, Yasuhiro, Masahiro Hikita, Hiroaki Ueno, et al.. (2007). Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation. IEEE Transactions on Electron Devices. 54(12). 3393–3399. 826 indexed citations breakdown →

10.

Uemoto, Yasuhiro, Masahiro Hikita, Hiroaki Ueno, et al.. (2006). A Normally-off AlGaN/GaN Transistor with RonA=2.6m&#x003A9;cm2 and BVds=640V Using Conductivity Modulation. 1–4. 44 indexed citations

11.

Ichino, Yusuke, Hisayoshi Matsuo, Yutaka Yoshida, et al.. (2006). Possibility of High Deposition Rate in SmBa₂Cu₃O_y Films Prepared Using the Vapor–Liquid–Solid Growth Mode. Japanese Journal of Applied Physics. 45(2R). 758–758. 12 indexed citations

12.

Ichino, Yusuke, et al.. (2003). Improvement of Superconductivity in High Critical Temperature LaBa₂Cu₃O_yFilms Grown by Vapor-Liquid-Solid Mode. Japanese Journal of Applied Physics. 42(Part 2, No. 3A). L243–L245. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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