Ferdinando Iucolano

2.8k total citations · 1 hit paper
69 papers, 2.2k citations indexed

About

Ferdinando Iucolano is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Ferdinando Iucolano has authored 69 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Condensed Matter Physics, 59 papers in Electrical and Electronic Engineering and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Ferdinando Iucolano's work include GaN-based semiconductor devices and materials (62 papers), Semiconductor materials and devices (42 papers) and Silicon Carbide Semiconductor Technologies (32 papers). Ferdinando Iucolano is often cited by papers focused on GaN-based semiconductor devices and materials (62 papers), Semiconductor materials and devices (42 papers) and Silicon Carbide Semiconductor Technologies (32 papers). Ferdinando Iucolano collaborates with scholars based in Italy, Switzerland and Czechia. Ferdinando Iucolano's co-authors include Fabrizio Roccaforte, Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, V. Raineri, Raffaella Lo Nigro, Mario Saggio, Alessandro Chini, Alfonso Patti and G. Verzellesi and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Ferdinando Iucolano

62 papers receiving 2.1k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

2017 426 citations Fabrizio Roccaforte, Patrick Fiorenza et al. profile →

Peers

Countries citing papers authored by Ferdinando Iucolano

Since Specialization

Citations

This map shows the geographic impact of Ferdinando Iucolano's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ferdinando Iucolano with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ferdinando Iucolano more than expected).

Fields of papers citing papers by Ferdinando Iucolano

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ferdinando Iucolano. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ferdinando Iucolano. The network helps show where Ferdinando Iucolano may publish in the future.

Co-authorship network of co-authors of Ferdinando Iucolano

This figure shows the co-authorship network connecting the top 25 collaborators of Ferdinando Iucolano. A scholar is included among the top collaborators of Ferdinando Iucolano based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ferdinando Iucolano. Ferdinando Iucolano is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Analysis of Dynamic- R _on and V _TH Shift in On-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 2025 ·IEEE Journal of Emerging and Selected Topics in Power Electronics ·(unknown), Nicolò Zagni, Marcello Cioni, (unknown), Maria Eloisa Castagna, (unknown), Ferdinando Iucolano, Alessandro Chini	0
2	On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs 2025 ·Micromachines ·(unknown), (unknown), Marcello Cioni, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Maria Eloisa Castagna, A. Constant, Ferdinando Iucolano, Alessandro Chini	0
3	Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 2024 ·Applied Surface Science ·(unknown), Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, (unknown), S. Mirabella, Ferdinando Iucolano, Fabrizio Roccaforte	7
4	Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs 2024 ·SHILAP Revista de lepidopterología ·Marcello Cioni, (unknown), Alessandro Chini, Antonino Parisi, Giacomo Cappellini, (unknown), Maria Eloisa Castagna, (unknown), Ferdinando Iucolano	1
5	On the Dynamic R_ON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 2024 ·IEEE Electron Device Letters ·Marcello Cioni, Alessandro Chini, Nicolò Zagni, G. Verzellesi, (unknown), (unknown), (unknown), (unknown), (unknown), Maria Eloisa Castagna, A. Constant, Ferdinando Iucolano	1
6	Hole Virtual Gate Model Explaining Surface-Related Dynamic R_ON in p-GaN Power HEMTs 2024 ·IEEE Electron Device Letters ·Nicolò Zagni, G. Verzellesi, Alessandro Bertacchini, M. Borgarino, Ferdinando Iucolano, Alessandro Chini	1
7	Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation 2024 ·IEEE Journal of the Electron Devices Society ·(unknown), (unknown), (unknown), Carlo De Santi, Matteo Buffolo, E. Canato, Michele Gallo, (unknown), Isabella Rossetto, (unknown), (unknown), Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini	3
8	On-Wafer R_ON Degradation Analysis of 100 V p-GaN HEMTs Emulating Low- and High-Side Operation in Half Bridge Circuits 2024 ·IRIS UNIMORE (University of Modena and Reggio Emilia) ·(unknown), Nicolò Zagni, (unknown), Marcello Cioni, Giacomo Cappellini, Maria Eloisa Castagna, (unknown), Ferdinando Iucolano, G. Verzellesi, Alessandro Chini	0
9	R_ON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 2024 ·IRIS UNIMORE (University of Modena and Reggio Emilia) ·Nicolò Zagni, (unknown), Marcello Cioni, Giacomo Cappellini, Maria Eloisa Castagna, (unknown), Ferdinando Iucolano, G. Verzellesi, Alessandro Chini	0
10	Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation 2023 ·Materials Science in Semiconductor Processing ·Antonino Scandurra, (unknown), G. Franzò, Giuseppe Greco, Fabrizio Roccaforte, Maria Eloisa Castagna, (unknown), Andrea Severino, Ferdinando Iucolano, E. Bruno, S. Mirabella	3
11	Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies 2023 ·SHILAP Revista de lepidopterología ·(unknown), Marcello Cioni, (unknown), (unknown), (unknown), (unknown), Maria Eloisa Castagna, Giacomo Cappellini, Giuseppe Luongo, Maurizio Moschetti, A. Constant, (unknown), Ferdinando Iucolano, Alessandro Chini	3
12	Gate-Bias Induced R_ON Instability in p-GaN Power HEMTs 2023 ·IEEE Electron Device Letters ·Alessandro Chini, Nicolò Zagni, G. Verzellesi, Marcello Cioni, (unknown), (unknown), Maria Eloisa Castagna, Ferdinando Iucolano	11
13	Experimental and numerical investigation of Poole–Frenkel effect on dynamic R _ON transients in C-doped p-GaN HEMTs 2021 ·Semiconductor Science and Technology ·Nicolò Zagni, Marcello Cioni, Ferdinando Iucolano, Maurizio Moschetti, G. Verzellesi, Alessandro Chini	10
14	Study of oxide trapping in SiC MOSFETs by means of TCAD simulations 2019 ·Materials Science in Semiconductor Processing ·(unknown), Ferdinando Iucolano	8
15	GaN-on-Si HEMTs for wireless base stations 2019 ·Materials Science in Semiconductor Processing ·Ferdinando Iucolano, Timothy Boles	44
16	Experimental and Numerical Evaluation of R_ONDegradation in GaN HEMTs During Pulse-Mode Operation 2017 ·IEEE Journal of the Electron Devices Society ·Alessandro Chini, Ferdinando Iucolano	5
17	Impact of growth conditions on stress and quality of aluminum nitride (AlN) thin buffer layers 2016 ·physica status solidi (b) ·Andrea Severino, Ferdinando Iucolano	12
18	Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers 2016 ·IEEE Transactions on Electron Devices ·Alessandro Chini, Gaudenzio Meneghesso, Matteo Meneghini, F. Fantini, G. Verzellesi, Alfonso Patti, Ferdinando Iucolano	90
19	Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures 2013 ·Applied Physics Letters ·Ferdinando Iucolano, Giuseppe Greco, Fabrizio Roccaforte	54
20	Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN 2007 ·Materials science forum ·Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Alessandra Alberti, V. Raineri	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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