Jan Šonský

677 citations

32 papers · 555 indexed · h-index 13

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Power Amplifier Design

Papers in

Condensed Matter Physics 20
- GaN-based semiconductor devices and materials 20
Electrical and Electronic Engineering 28
- Semiconductor materials and devices 17
- Advancements in Semiconductor Devices and Circuit Design 13
- Silicon Carbide Semiconductor Technologies 13
- Radio Frequency Integrated Circuit Design 5
- Electrostatic Discharge in Electronics 4
- Advanced Power Amplifier Design 4

Co-authors: J.A. Croon A. Heringa G.A.M. Hurkx Michael J. Uren Martin Kuball Marco Silvestri Markus Cäsar J.J.T.M. Donkers
Journals: IEEE Transactions on Electron Devices (7 papers)IEEE Electron Device Letters (2 papers)IET Power Electronics (1 paper)IEEE Journal of Solid-State Circuits (1 paper)TU/e Research Portal (1 paper)
Partner nations: Belgium Netherlands United Kingdom

In The Last Decade

Jan Šonský

32 papers receiving 546 citations

Peers

Countries citing papers authored by Jan Šonský

Since Specialization

Citations

This map shows the geographic impact of Jan Šonský's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jan Šonský with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jan Šonský more than expected).

Fields of papers citing papers by Jan Šonský

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jan Šonský. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jan Šonský. The network helps show where Jan Šonský may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Jan Šonský, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jan Šonský Line = papers co-authored together Jan Šonský links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	2DEG Retraction and Potential Distribution of GaN–on–Si HEMTs Investigated Through a Floating Gate Terminal IEEE Transactions on Electron Devices ·Isabella Rossetto, Matteo Meneghini, Carlo De Santi, 洪新发, Razia Sultana, G.A.M. Hurkx, J.A. Croon, Jan Šonský, Gaudenzio Meneghesso, Enrico Zanoni	2018	11
2	Novel 5V-EDMOS transistor with a record /max of 450 GHz in a baseline 40nm CMOS technology Dinh Thanh Viet, Jan Šonský, Adharina Dian Pertiwi, guangping zeng, 雅文広野, C. Detcheverry	2017	2
3	Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation IEEE Transactions on Electron Devices ·Isabella Rossetto, Matteo Meneghini, 洪新发, Razia Sultana, G.A.M. Hurkx, J.A. Croon, Jan Šonský, Gaudenzio Meneghesso, Enrico Zanoni	2016	18
4	Subthreshold Mobility in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Gentsu Uozumi, Michael J. Uren, Kean Boon Lee, P.A. Houston, D. J. Wallis, Ivor Guiney, C. J. Humphreys, 洪新发, Jan Šonský, Martin Kuball	2016	5
5	Quantitative characterization of the trapped charge profile in GaN HEMTs by sense nodes in the drain-extension region J.A. Croon, G.A.M. Hurkx, J.J.T.M. Donkers, 洪新发, Jan Šonský	2016	6
6	Reverse-biased induced mechanical stress in AlGaN/GaN power diodes Bristol Research (University of Bristol) ·平崎鋭矢, James W. Pomeroy, Indranil Chatterjee, B Chen, Elisabet Noelí Micheloud, Tuija Ylä-Kotola, Jan Šonský, Kenneth D. Pedrotti, Michael J. Uren, Martin Kuball	2016	4
7	Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high‐voltage transistors via measurements and technology computer‐aided design simulations of transfer characteristics of metal–insulator–semiconductor field‐effect transistors and high‐electron‐mobility transistors IET Power Electronics ·Giorgia Longobardi, Florin Udrea, S. J. Sque, J.A. Croon, Насибуллин Марат Хабирович, Jan Šonský	2015	3
8	Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs IEEE Electron Device Letters ·Giorgia Longobardi, Florin Udrea, S. J. Sque, G.A.M. Hurkx, J.A. Croon, Ettore Napoli, Jan Šonský	2014	44
9	The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET — Experiment and TCAD simulations Giorgia Longobardi, Florin Udrea, S. J. Sque, J.A. Croon, Насибуллин Марат Хабирович, Jan Šonský	2014	7
10	The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling Giorgia Longobardi, Florin Udrea, S. J. Sque, J.A. Croon, Насибуллин Марат Хабирович, Jan Šonský	2014	11
11	OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown IEEE Transactions on Electron Devices ·Matteo Meneghini, Gabriela Nandi, Gianluca Betti Miller, G.A.M. Hurkx, Christian Prommesberger, Jan Šonský, J.A. Croon, Gaudenzio Meneghesso, Enrico Zanoni	2014	38
12	Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths IEEE Electron Device Letters ·Michael J. Uren, Marco Silvestri, Markus Cäsar, G.A.M. Hurkx, J.A. Croon, Jan Šonský, Martin Kuball	2014	107
13	Need for Defects in Floating-Buffer AlGaN/GaN HEMTs Bristol Research (University of Bristol) ·Michael J. Uren, Marco Silvestri, Wenjing Yang, James W. Pomeroy, G.A.M. Hurkx, J.A. Croon, Jan Šonský, Martin Kuball	2014	8
14	Modelling 2DEG charges in AlGaN/GaN heterostructures Giorgia Longobardi, Florin Udrea, S. J. Sque, J.A. Croon, Насибуллин Марат Хабирович, Ettore Napoli, Jan Šonský	2012	6
15	A 65nm CMOS pulse-width-controlled driver with 8V<inf>pp</inf> output voltage for switch-mode RF PAs up to 3.6GHz TU/e Research Portal ·Tao Chen, Mustafa Açar, Mark P. van der Heijden, C. Rauls, L.C.N. de Vreede, D.M.W. Leenaerts, Jan Šonský	2011	11
16	HCI reliability control in HV-PMOS transistors: Conventional EDMOS vs. Dielectric RESURF and lateral field plates José Pérez‐González, Jan Šonský, A. Heringa, J. D. Benson, Ping-Chuan Chiang, Chengcheng Yao, S.A. Moser	2009	4
17	Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz Mustafa Açar, Mark P. van der Heijden, Abraheem Hadeeyah, C. Rauls, Jan Šonský, A Doderlein	2009	6
18	Innovative lateral field plates by gate fingers on STI regions in deep submicron CMOS A. Heringa, Jan Šonský, José Pérez‐González, C. Birell, Ping-Chuan Chiang	2008	13
19	Local buried oxide technology for HV transistors integrated in CMOS Hisaki Kosawa, Jan Šonský, Endin Mujahdin, Laura Komala	2007	1
20	Novel power transistor design for a process independent high voltage option in standard CMOS A. Heringa, Jan Šonský	2006	7

About Jan Šonský

Jan Šonský is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 32 papers that have together received 555 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Silicon Carbide Semiconductor Technologies (13 papers), Ga2O3 and related materials (6 papers), Radio Frequency Integrated Circuit Design (5 papers), Electrostatic Discharge in Electronics (4 papers) and Advanced Power Amplifier Design (4 papers). The work is most often cited by research in Condensed Matter Physics (401 citations), Electrical and Electronic Engineering (489 citations), Electronic, Optical and Magnetic Materials (139 citations), Atomic and Molecular Physics, and Optics (79 citations) and Materials Chemistry (53 citations). Jan Šonský has collaborated with scholars based in Belgium, Netherlands and United Kingdom. Frequent co-authors include J.A. Croon, A. Heringa, G.A.M. Hurkx, Michael J. Uren, Martin Kuball, Marco Silvestri, Markus Cäsar, J.J.T.M. Donkers, Gaudenzio Meneghesso and Enrico Zanoni. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IET Power Electronics, IEEE Journal of Solid-State Circuits and TU/e Research Portal.

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