L. Deferm

811 total citations
76 papers, 583 citations indexed

About

L. Deferm is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Materials Chemistry. According to data from OpenAlex, L. Deferm has authored 76 papers receiving a total of 583 indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Electrical and Electronic Engineering, 7 papers in Computer Networks and Communications and 5 papers in Materials Chemistry. Recurrent topics in L. Deferm's work include Advancements in Semiconductor Devices and Circuit Design (60 papers), Semiconductor materials and devices (55 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). L. Deferm is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (60 papers), Semiconductor materials and devices (55 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). L. Deferm collaborates with scholars based in Belgium, Netherlands and United Kingdom. L. Deferm's co-authors include Eddy Simoen, G. Groeseneken, H.E. Maes, Jan Van Houdt, G. Declerck, B. Dierickx, E.P. Vandamme, G. Badenes, L. Haspeslagh and D. Wellekens and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

L. Deferm

65 papers receiving 548 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Deferm Belgium 14 539 51 46 46 41 76 583
A. Zolfaghari United States 11 582 1.1× 166 3.3× 16 0.3× 15 0.3× 47 1.1× 39 616
K. Kato Japan 11 364 0.7× 24 0.5× 14 0.3× 34 0.7× 83 2.0× 24 377
Jeffrey B. Johnson United States 12 415 0.8× 41 0.8× 11 0.2× 21 0.5× 41 1.0× 49 431
O. Faynot France 9 298 0.6× 53 1.0× 10 0.2× 36 0.8× 24 0.6× 38 323
R.C. Booth United Kingdom 9 258 0.5× 26 0.5× 23 0.5× 18 0.4× 122 3.0× 29 289
Y. Taur United States 10 239 0.4× 36 0.7× 13 0.3× 18 0.4× 50 1.2× 19 264
H.P. Chou Taiwan 9 162 0.3× 81 1.6× 15 0.3× 30 0.7× 30 0.7× 37 249
Yungseon Eo South Korea 12 330 0.6× 28 0.5× 10 0.2× 16 0.3× 36 0.9× 46 349
S. T. K. Nieh United States 8 311 0.6× 83 1.6× 17 0.4× 37 0.8× 239 5.8× 10 409
D.B. Estreich United States 11 367 0.7× 32 0.6× 5 0.1× 26 0.6× 49 1.2× 20 379

Countries citing papers authored by L. Deferm

Since Specialization
Citations

This map shows the geographic impact of L. Deferm's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Deferm with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Deferm more than expected).

Fields of papers citing papers by L. Deferm

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Deferm. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Deferm. The network helps show where L. Deferm may publish in the future.

Co-authorship network of co-authors of L. Deferm

This figure shows the co-authorship network connecting the top 25 collaborators of L. Deferm. A scholar is included among the top collaborators of L. Deferm based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Deferm. L. Deferm is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Houdt, Jan Van, D. Wellekens, L. Haspeslagh, et al.. (2005). A 5v/3.3v-compatible Flash E/sup 2/PROM Cell With A 400ns/70μm Programming Time For Embedded Memory Applications. 54–57. 1 indexed citations
2.
Deferm, L., et al.. (2003). The influence of the interface trap density on the performance of bipolar devices. 10. 136–139. 1 indexed citations
3.
Kubicek, Stefan, W.K. Henson, A. De Keersgieter, et al.. (2003). Investigation of intrinsic transistor performance of advanced CMOS devices with 2.5 nm NO gate oxides. 823–826. 4 indexed citations
4.
5.
Bellens, R., et al.. (2002). Characterization of hot-carrier aging of a 0.35 μm fully overlapped-LDD CMOS technology. 1. 197–202. 1 indexed citations
6.
7.
Schreurs, Dominique, S. Vandenberghe, G. Carchon, et al.. (2002). Evaluation of non-linear modelling techniques for MOSFETs based on vectorial large-signal measurements. 2. 429–432. 2 indexed citations
8.
Vandamme, E.P., et al.. (1999). Reliable extraction of RF figures-of-merit for MOSFETs. TU/e Research Portal. 1. 660–663. 3 indexed citations
9.
Bock, Karlheinz, Christian Russ, G. Badenes, G. Groeseneken, & L. Deferm. (1998). Influence of well profile and gate length on the ESD performance of a fully silicided 0.25 μm CMOS technology. 21(4). 286–294. 19 indexed citations
10.
Wellekens, D., Jan Van Houdt, J. De Blauwe, et al.. (1998). A low voltage, high performance 0.35 ?m embedded flash EEPROM cell technology.
11.
12.
Badenes, G., et al.. (1997). A High Performance 0.18 um CMOS Technology Designed for Manufacturability. European Solid-State Device Research Conference. 404–407. 1 indexed citations
13.
Deferm, L., et al.. (1996). Closed-Form Frequency Dependent Gate-to-Channel Capacitance Model for Submicron MOSFET's. European Solid-State Device Research Conference. 679–682. 1 indexed citations
14.
Houdt, Jan Van, D. Wellekens, L. Haspeslagh, et al.. (1995). Investigation and Suppression of the Gate Disturb Effect in Source-Side Injection Flash EEPROM Arrays. European Solid-State Device Research Conference. 553–556. 1 indexed citations
15.
Bellens, R., et al.. (1995). Study of the hot-carrier degradation performance of 0.35-μm fully overlapped LDD devices. Microelectronic Engineering. 28(1-4). 265–268. 2 indexed citations
16.
Rooyackers, R., et al.. (1994). An Optimized Poly-Buffered LOCOS Process for a 0.35 μm CMOS Technology. European Solid-State Device Research Conference. 199–202.
17.
Decoutere, Stefaan, et al.. (1994). Post-Etch Cleaning after Dry Etching the Emitter Windows to Improve the Bipolar Characteristics in a 0.5μm BiCMOS Process. European Solid-State Device Research Conference. 137–140. 1 indexed citations
18.
Houdt, Jan Van, D. Wellekens, L. Haspeslagh, et al.. (1993). Optimization of a submicron HIMOS Flash E 2 PROM cell for implementation in a virtual ground array configuration. European Solid-State Device Research Conference. 381–384. 1 indexed citations
19.
Gutiérrez-D, Edmundo A., L. Deferm, & G. Declerck. (1992). DC characteristics of submicrometer CMOS inverters operating over the whole temperature range of 4.2-300 K. IEEE Transactions on Electron Devices. 39(9). 2182–2184. 5 indexed citations
20.
Deferm, L., et al.. (1987). The Influence of Lifetime on the Lateral Pasitic Bipolar Transistors in CMOS. European Solid-State Device Research Conference. 775–778. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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