Hasan M. Nayfeh

2.4k citations

20 papers · 934 indexed · 1 hit paper · h-index 9

Artificial Intelligence top 5%
Electrical and Electronic Engineering top 10%
Atomic and Molecular Physics, and Optics top 10%
Biomedical Engineering
Computational Theory and Mathematics top 10%

Co-authors: D.A. Antoniadis Judy L. Hoyt Andrew Eddins Abhinav Kandala Yantao Wu Sajant Anand Young‐Seok Kim Sami Rosenblatt
Topics: Advancements in Semiconductor Devices and Circuit Design (18 papers)Semiconductor materials and devices (17 papers)Integrated Circuits and Semiconductor Failure Analysis (9 papers)
Cited by: Artificial Intelligence Computational Mathematics Atomic and Molecular Physics, and Optics
Journals: Nature IEEE Transactions on Electron Devices IEEE Electron Device Letters
Partner nations: United States Japan

In The Last Decade

Hasan M. Nayfeh

20 papers receiving 879 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Evidence for the utility of quantum computing before fault tolerance

2023 545 citations Young‐Seok Kim, Andrew Eddins et al. Nature profile →

Peers

Countries citing papers authored by Hasan M. Nayfeh

Since Specialization

Citations

This map shows the geographic impact of Hasan M. Nayfeh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hasan M. Nayfeh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hasan M. Nayfeh more than expected).

Fields of papers citing papers by Hasan M. Nayfeh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hasan M. Nayfeh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hasan M. Nayfeh. The network helps show where Hasan M. Nayfeh may publish in the future.

Co-authorship network of co-authors of Hasan M. Nayfeh

This figure shows the co-authorship network connecting the top 25 collaborators of Hasan M. Nayfeh. A scholar is included among the top collaborators of Hasan M. Nayfeh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hasan M. Nayfeh. Hasan M. Nayfeh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Evidence for the utility of quantum computing before fault tolerancebreakdown → 2023 ·Nature ·Young‐Seok Kim,Andrew Eddins,Sajant Anand,Ken Xuan Wei,E. van den Berg,Sami Rosenblatt,Hasan M. Nayfeh,Yantao Wu,Michael P. Zaletel,Kristan Temme,Abhinav Kandala	545
2	SOI FinFET nFET-to-pFET Tracking Variability Compact Modeling and Impact on Latch Timing 2015 ·IEEE Transactions on Electron Devices ·Jie Deng,(unknown),R. Thomä,(unknown),(unknown),(unknown),Ning Lu,R. Williams,Hasan M. Nayfeh,Kai Zhao,(unknown),Ximeng Guan,N. Zamdmer,(unknown),(unknown),(unknown),(unknown),S. Springer,(unknown)	8
3	Electrical characteristics of graphene wrinkles extracted by conductive Atomic Force Microscopy and electrical measurements on kelvin structures 2013 ·(unknown),(unknown),(unknown),M. Saadat,Tewfik Souier,Adel B. Gougam,Hasan M. Nayfeh	1
4	Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS 2011 ·IEEE Transactions on Nuclear Science ·Rajan Arora,En Xia Zhang,(unknown),John D. Cressler,Daniel M. Fleetwood,Ronald D. Schrimpf,Giuseppe La Rosa,Akil K. Sutton,Hasan M. Nayfeh,G. Freeman	19
5	Impact of Source/Drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs 2011 ·Rajan Arora,(unknown),(unknown),John D. Cressler,Akil K. Sutton,Hasan M. Nayfeh,Giuseppe La Rosa,G. Freeman	6
6	Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transients in 45-nm SOI CMOS 2010 ·IEEE Transactions on Nuclear Science ·Kurt A. Moen,(unknown),Edward P. Wilcox,John D. Cressler,Hasan M. Nayfeh,Akil K. Sutton,Jeffrey H. Warner,S. Büchner,Dale McMorrow,György Vizkelethy,P.E. Dodd	12
7	Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS 2010 ·Rajan Arora,Kurt A. Moen,(unknown),John D. Cressler,En Xia Zhang,Daniel M. Fleetwood,Ronald D. Schrimpf,Akil K. Sutton,Hasan M. Nayfeh	5
8	Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs 2009 ·IEEE Transactions on Electron Devices ·Hasan M. Nayfeh,N. Rovedo,A. Bryant,(unknown),Arvind Kumar,Xiaojun Yu,Ning Su,J.W. Sleight,Robert R. Robison,W. Rausch,(unknown),G. Freeman	12
9	SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology 2008 ·ECS Transactions ·J. Holt,(unknown),Thomas Adam,S.J. Jeng,(unknown),Rohit Pal,Hasan M. Nayfeh,(unknown),(unknown),M. W. Stoker,Abhishek Dube,D. Schepis	4
10	Hole Transport in Nanoscale p-type MOSFET SOI Devices with High Strain 2007 ·Hasan M. Nayfeh,Shie‐Chang Jeng,Tosihide H. YOSIDA,(unknown),R. Pal,A.M. Waite,(unknown),Jeffrey B. Johnson,(unknown),J. Holt,Thomas Adam,Anita Madan,A. Domenicucci	5
11	Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs 2006 ·IEEE Electron Device Letters ·Hasan M. Nayfeh,(unknown),J. M. Hergenrother,J.W. Sleight,Zhibin Ren,O. Dokumaci,(unknown),D. Chidambarrao,(unknown),(unknown),W. Natzle,(unknown),J. A. Ott,Mukesh Khare,K.W. Guarini,M. Ieong,Wilfried Haensch	8
12	Effect of Contact Liner Stress in High-Performance FDSOI Devices with Ultra-Thin Silicon Channels and 30 nm Gate Lengths 2006 ·(unknown),J. M. Hergenrother,J. A. Ott,K.W. Guarini,Wilfried Haensch,J.W. Sleight,(unknown),Hasan M. Nayfeh,O. Dokumaci,(unknown),D. Chidambarrao,(unknown),(unknown),(unknown),(unknown),Mukesh Khare,M. Ieong	4
13	Impact of Ion Implantation Damage and Thermal Budget on Mobility Enhancement in Strained-Si N-Channel MOSFETs 2004 ·IEEE Transactions on Electron Devices ·Guangrui Xia,Hasan M. Nayfeh,Minjoo Larry Lee,Eugene A. Fitzgerald,D.A. Antoniadis,Dalaver H. Anjum,Jun Li,R. Hull,N. Klymko,Judy L. Hoyt	17
14	A Physically Based Analytical Model for the Threshold Voltage of Strained-Si n-MOSFETs 2004 ·IEEE Transactions on Electron Devices ·Hasan M. Nayfeh,Judy L. Hoyt,D.A. Antoniadis	62
15	Investigation of scaling methodology for strained Si n-MOSFETs using a calibrated transport model 2004 ·Hasan M. Nayfeh,Judy L. Hoyt,D.A. Antoniadis	5
16	SiGe-On-Insulator (SGOI): Two Structures for CMOS Application 2003 ·DSpace@MIT (Massachusetts Institute of Technology) ·Zhiyuan Cheng,Jongwan Jung,Minjoo Larry Lee,Hasan M. Nayfeh,Arthur J. Pitera,Judy L. Hoyt,Eugene A. Fitzgerald,D.A. Antoniadis	1
17	Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs 2003 ·IEEE Electron Device Letters ·Hasan M. Nayfeh,C. W. Leitz,Arthur J. Pitera,Eugene A. Fitzgerald,Judy L. Hoyt,D.A. Antoniadis	45
18	Strained silicon MOSFET technology 2003 ·Judy L. Hoyt,Hasan M. Nayfeh,S. Eguchi,Ingvar Åberg,Guangrui Xia,(unknown),Eugene A. Fitzgerald,D.A. Antoniadis	167
19	Electron inversion layer mobility in strained-Si n-MOSFETs with high channel doping concentration achieved by ion implantation 2003 ·Hasan M. Nayfeh,Judy L. Hoyt,C. W. Leitz,Arthur J. Pitera,Eugene A. Fitzgerald,D.A. Antoniadis	2
20	Supply-voltage optimization for below-70-nm technology-node MOSFETs 2002 ·IEEE Transactions on Semiconductor Manufacturing ·Hitoshi Wakabayashi,Ganesh S. Samudra,(unknown),Hasan M. Nayfeh,D.A. Antoniadis	6

About Hasan M. Nayfeh

Hasan M. Nayfeh is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics, having authored 20 papers that have together received 934 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). The work is most often cited by research in Artificial Intelligence (453 citations), Computational Mathematics (7 citations) and Atomic and Molecular Physics, and Optics (334 citations). Hasan M. Nayfeh has collaborated with scholars based in United States and Japan. Frequent co-authors include D.A. Antoniadis, Judy L. Hoyt, Andrew Eddins, Abhinav Kandala, Yantao Wu, Sajant Anand, Young‐Seok Kim, Sami Rosenblatt, Ken Xuan Wei and E. van den Berg. Their work appears in journals such as Nature, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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