C. W. Leitz

2.8k citations

46 papers · 2.2k indexed · h-index 21

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 45
- Semiconductor materials and devices 24
- Advancements in Semiconductor Devices and Circuit Design 22
- Integrated Circuits and Semiconductor Failure Analysis 13
- Silicon and Solar Cell Technologies 11
- Thin-Film Transistor Technologies 6
Atomic and Molecular Physics, and Optics 18
- Semiconductor Quantum Structures and Devices 13
- Semiconductor materials and interfaces 9

Co-authors: Eugene A. Fitzgerald M. T. Currie T. A. Langdo D.A. Antoniadis Srikanth Samavedam Gianni Taraschi Minjoo Larry Lee Arthur J. Pitera
Journals: Applied Physics Letters (8 papers)Journal of Applied Physics (5 papers)IEEE Electron Device Letters (3 papers)Thin Solid Films (3 papers)Journal of Astronomical Telescopes Instruments and Systems (2 papers)
Partner nations: United States Singapore Argentina

In The Last Decade

C. W. Leitz

46 papers receiving 2.1k citations

Peers

Countries citing papers authored by C. W. Leitz

Since Specialization

Citations

This map shows the geographic impact of C. W. Leitz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. W. Leitz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. W. Leitz more than expected).

Fields of papers citing papers by C. W. Leitz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. W. Leitz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. W. Leitz. The network helps show where C. W. Leitz may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. W. Leitz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. W. Leitz Line = papers co-authored together C. W. Leitz links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Achieving Single-Electron Sensitivity at Enhanced Speed in Fully Depleted CCDs with Double-Gate MOSFETs Physical Review Letters ·Miguel Sofo-Haro, Iwan Jakowlewitsch Korostovetz, J. Estrada, S. Holland, Farah Fahim, C. W. Leitz	2024	1
2	Demonstrating repetitive non-destructive readout with SiSeRO devices Journal of Astronomical Telescopes Instruments and Systems ·Tanmoy Chattopadhyay, Sven Herrmann, Zhiyong Su, Iwan Jakowlewitsch Korostovetz, G. Prigozhin, R. Glenn Morris, Michael C. Cooper, Beverly LaMarr, Andrew Malonis, S. W. Allen, Marshall W. Bautz, C. W. Leitz	2024	1
3	A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric Applied Physics Letters ·Tiina Maaniitty, Jia Fu, Chunxiang Zhu, A.A.O. Tay, Zhiyuan Cheng, C. W. Leitz, Anthony Lochtefeld	2007	16
4	Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates Thin Solid Films ·C. W. Leitz, C.J. Vineis, John A. Carlin, J.G. Fiorenza, G. Braithwaite, R. Westhoff, V. K. Yang, M. Carroll, T. A. Langdo, K. Matthews, Puneet Kohli, M. Rödder, R. Wise, Anthony Lochtefeld	2006	5
5	Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry Thin Solid Films ·C.J. Vineis, M. Erdtmann, C. W. Leitz	2006	1
6	Surface NH3 anneal on strained Si0.5Ge0.5 for metal-oxide-semiconductor applications with HfO2 as gate dielectric Applied Physics Letters ·Tiina Maaniitty, Nan Wu, Qingchun Zhang, Chunxiang Zhu, M. F. Li, A.A.O. Tay, Zhiyuan Cheng, C. W. Leitz, Anthony Lochtefeld	2006	11
7	DC and RF characterization of fully depleted strained SOI MOSFETs Mia Stiernman, T. A. Langdo, IAN KEMP, J.G. Fiorenza, P.W. Wyatt, M. T. Currie, C. W. Leitz, G. Braithwaite, M. Fritze, X. Y., D. Yost, Zhiyuan Cheng, Anthony Lochtefeld, L. Tanteri	2005	2
8	Fully Depleted n-MOSFETs on Supercritical Thickness Strained SOI IEEE Electron Device Letters ·Isaac Lauer, T. A. Langdo, Zhiyuan Cheng, J.G. Fiorenza, G. Braithwaite, M. T. Currie, C. W. Leitz, Anthony Lochtefeld, Wenyue Zu, Mayank T. Bulsara, Mark Somerville, D.A. Antoniadis	2004	36
9	Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs J.G. Fiorenza, G. Braithwaite, C. W. Leitz, M. T. Currie, Zhiyuan Cheng, V. K. Yang, T. A. Langdo, John A. Carlin, Mark Somerville, Anthony Lochtefeld, Wenyue Zu, Mayank T. Bulsara	2004	5
10	Coplanar Integration of Lattice-Mismatched Semiconductors with Silicon by Wafer Bonding Ge/Si[sub 1−x]Ge[sub x]/Si Virtual Substrates Journal of The Electrochemical Society ·Arthur J. Pitera, Gianni Taraschi, Minjoo Larry Lee, C. W. Leitz, Zhiyuan Cheng, Eugene A. Fitzgerald	2004	25
11	High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth Semiconductor Science and Technology ·R. J. H. Morris, T. J. Grasby, R. Hammond, M. Myronov, O. A. Mironov, D. R. Leadley, T. E. Whall, E. H. C. Parker, M. T. Currie, C. W. Leitz, Eugene A. Fitzgerald	2004	33
12	Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs IEEE Electron Device Letters ·Hasan M. Nayfeh, C. W. Leitz, Arthur J. Pitera, Eugene A. Fitzgerald, Judy L. Hoyt, D.A. Antoniadis	2003	45
13	Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate Journal of Applied Physics ·V. K. Yang, S. M. Ting, M. Groenert, Mayank T. Bulsara, M. T. Currie, C. W. Leitz, Eugene A. Fitzgerald	2003	13
14	High efficiency GaAs-on-Si solar cells with high V/sub oc/ using graded GeSi buffers John A. Carlin, Mantu K. Hudait, S. A. Ringel, David M. Wilt, Eric Clark, C. W. Leitz, M. T. Currie, T. A. Langdo, Eugene A. Fitzgerald	2002	16
15	Dislocation glide and blocking kinetics in compositionally graded SiGe/Si Journal of Applied Physics ·C. W. Leitz, M. T. Currie, Lei Dong, Jia‐Min Lai, Jianyao Xu, Eugene A. Fitzgerald, Mayank T. Bulsara	2001	74
16	Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. T. Currie, C. W. Leitz, T. A. Langdo, Gianni Taraschi, Eugene A. Fitzgerald, D.A. Antoniadis	2001	208
17	Diffusion Behavior of Ion-Implanted n-type Dopants in Silicon Germanium MRS Proceedings ·Castellar Rodríguez, C. W. Leitz, Eugene A. Fitzgerald, Judy L. Hoyt	2001	2
18	Relaxed Silicon-Germanium on Insulator (SGOI) MRS Proceedings ·Zhiyuan Cheng, M. T. Currie, C. W. Leitz, Gianni Taraschi, Minjoo Larry Lee, Arthur J. Pitera, Judy L. Hoyt, D.A. Antoniadis, Eugene A. Fitzgerald	2001	1
19	High quality Ge on Si by epitaxial necking Applied Physics Letters ·T. A. Langdo, C. W. Leitz, M. T. Currie, Eugene A. Fitzgerald, Anthony Lochtefeld, D.A. Antoniadis	2000	168
20	Dislocations in Relaxed SiGe/Si Heterostructures physica status solidi (a) ·Eugene A. Fitzgerald, M. T. Currie, Srikanth Samavedam, T. A. Langdo, Gianni Taraschi, V. K. Yang, C. W. Leitz, Mayank T. Bulsara	1999	4

About C. W. Leitz

C. W. Leitz is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Nuclear and High Energy Physics, Surfaces, Coatings and Films and Biomedical Engineering, having authored 46 papers that have together received 2.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor Quantum Structures and Devices (13 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Silicon and Solar Cell Technologies (11 papers), Semiconductor materials and interfaces (9 papers), Thin-Film Transistor Technologies (6 papers) and Nanowire Synthesis and Applications (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.1k citations), Atomic and Molecular Physics, and Optics (900 citations), Biomedical Engineering (558 citations), Materials Chemistry (371 citations) and Structural Biology (10 citations). C. W. Leitz has collaborated with scholars based in United States, Singapore and Argentina. Frequent co-authors include Eugene A. Fitzgerald, M. T. Currie, T. A. Langdo, D.A. Antoniadis, Srikanth Samavedam, Gianni Taraschi, Minjoo Larry Lee, Arthur J. Pitera, Zhiyuan Cheng and Mayank T. Bulsara. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Electron Device Letters, Thin Solid Films and Journal of Astronomical Telescopes Instruments and Systems.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact