S.J. Jeng

1.6k citations

35 papers · 636 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 34
- Semiconductor materials and devices 17
- Radio Frequency Integrated Circuit Design 16
- Advancements in Semiconductor Devices and Circuit Design 11
- 3D IC and TSV technologies 10
- Thin-Film Transistor Technologies 7
- Photonic and Optical Devices 4
- Silicon and Solar Cell Technologies 4
Atomic and Molecular Physics, and Optics 8
- Semiconductor Quantum Structures and Devices 7

Co-authors: G. S. Oehrlein G. Scilla C.M. Wayman D. Ahlgren S. Subbanna Jae-Sung Rieh K. Schonenberg Andy Stricker
Journals: Applied Physics Letters (6 papers)Materials Letters (3 papers)Journal of Applied Physics (2 papers)Applied Surface Science (1 paper)Journal of Crystal Growth (1 paper)
Partner nations: United States Belgium Germany

In The Last Decade

S.J. Jeng

34 papers receiving 610 citations

Peers

Countries citing papers authored by S.J. Jeng

Since Specialization

Citations

This map shows the geographic impact of S.J. Jeng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.J. Jeng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.J. Jeng more than expected).

Fields of papers citing papers by S.J. Jeng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.J. Jeng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.J. Jeng. The network helps show where S.J. Jeng may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S.J. Jeng, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.J. Jeng Line = papers co-authored together S.J. Jeng links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology ECS Transactions ·J. Holt, Letícia Santos Barbosa Matos, Thomas Adam, S.J. Jeng, K. Paulsen, Rohit Pal, Hasan M. Nayfeh, Remziye Koç, Charles Mavhunga, M. W. Stoker, Abhishek Dube, D. Schepis	2008	4
2	SiGe HBT technology with f/sub max//f/sub T/ = 350/300 GHz and gate delay below 3.3 ps Marwan Khater, Jae-Sung Rieh, Thomas Adam, A. Chinthakindi, J. Johnson, Paul Harald Brichta, Mounir Meghelli, F. Pagette, Heisse Ck, C.M. Schnabel, K. Schonenberg, Peter G. R. Smith, K. Stein, Andy Stricker, S.J. Jeng, Miriam Atmane, G. Freeman	2005	63
3	A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT Zohreh Taebi Noghondari, Okudaira, B.A. Rainey, Andy Stricker, Dewanggo Haryo Paramtopo, P. Gray, M. Zierak, Michael S. Gordon, D.R. Collins, Achutananda Parhi, Ridha Saryani Sitorus, Froukje de Roo, Alvin Joseph, J. Dunn, Jae-Sung Rieh, S.J. Jeng, Xuan Zhang, G. Freeman, D. Ahlgren	2003	35
4	Transistor Design and Application Considerations for G. Freeman, B. Jagannathan, S.J. Jeng, Jae-Sung Rieh, Dorothy R. Talbert, D. Ahlgren, S. Subbanna	2003	1
5	Transistor design and application considerations for < 200-GHz SiGe HBTs IEEE Transactions on Electron Devices ·G. Freeman, B. Jagannathan, S.J. Jeng, Jae-Sung Rieh, Andy Stricker, D. Ahlgren, S. Subbanna	2003	48
6	Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs S.J. Jeng, D. Ahlgren, 重雄塩田, Fabrizio Incerti, G. Freeman, D. Greenberg, J. Malinowski, D. Nguyen-Ngoc, K. Schonenberg, K. Stein, Samuel Ernesto, Y x B ichi Rikuna, Paul Ronsheim, S. Subbanna, D.L. Harame	2002	0
7	A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications D. Nguyen-Ngoc, D.L. Harame, J. Malinowski, S.J. Jeng, K. Schonenberg, マイナカムラ, 重雄塩田, S. Wu, M. Soyuer, A Soilihi, K. Stein, R. Groves, S. Subbanna, Samuel Ernesto, D.A. Sunderland, B.S. Meyerson	2002	8
8	A SiGe HBT BiCMOS technology for mixed signal RF applications D. Ahlgren, G. Freeman, S. Subbanna, R. Groves, D. Greenberg, J. Malinowski, D. Nguyen-Ngoc, S.J. Jeng, K. Stein, K. Schonenberg, G. A. Peake, Remedios García García, S. Wu, D.L. Harame, B.S. Meyerson	2002	36
9	Lateral scaling of the self-aligned extrinsic base in SiGe HBTs S.J. Jeng, D. Greenberg, Y x B ichi Rikuna, 艾小洋, E. Montanari, Akiko Tashiro	2002	3
10	Large-signal performance of high-BV/sub CEO/ graded epi-base SiGe HBTs at wireless frequencies D. Greenberg, Michel Rivier, Patrick Girard, E. Bergeault, 吕海斌 Lü Haibin, D. Ahlgren, G. Freeman, S. Subbanna, S.J. Jeng, K. Stein, D. Nguyen-Ngoc, K. Schonenberg, J. Malinowski, Samuel Ernesto, D.L. Harame, B.S. Meyerson	2002	13
11	A Si-Ge HBT Technology for the Wireless Marketplace European Solid-State Device Research Conference ·D. Ahlgren, D.A. Sunderland, マイナカムラ, D. Greenberg, S.J. Jeng, J. Malinowski, D. Nguyen-Ngoc, K. Stein, D.L. Harame, B.S. Meyerson	1996	1
12	A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications Applied Surface Science ·D. Nguyen-Ngoc, D.A. Sunderland, D. Ahlgren, S.J. Jeng, マイナカムラ, J. Malinowski, K. Schonenberg, Nina A. Bondarenko, B.S. Meyerson, D.L. Harame	1996	3
13	Structure, properties, and thermal stability of in situ phosphorus-doped hydrogenated microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition Applied Physics Letters ·S.J. Jeng, David E. Kotecki, Jerzy Kanicki, C. Parks, Nicasio Perdomo	1991	6
14	Strain-induced quantum confinement of carriers due to extended defects in silicon Physical review. B, Condensed matter ·H. Weman, B. Ḿonemar, G. S. Oehrlein, S.J. Jeng	1990	37
15	Structural and Electrical Properties of Molecular Beam Deposited Polycrystalline Silicon MRS Proceedings ·S.L. Delage, S.J. Jeng, D. Jousse, Subramanian S. Iyer	1987	1
16	Microstructural studies of reactive ion etched silicon Applied Physics Letters ·S.J. Jeng, G. S. Oehrlein	1987	32
17	Evidence of the role of defects near the injecting interface in determining SiO2 breakdown Applied Physics Letters ·P. Olivo, B. Riccò, T.N. Nguyen, T. S. Kuan, S.J. Jeng	1987	13
18	III-V heterostructure interfaces by metalorganic chemical vapor deposition Journal of Applied Physics ·J. J. Coleman, G. Costrini, S.J. Jeng, C.M. Wayman	1986	10
19	Structural and compositional analyses of heterostructures grown by MOCVD Materials Letters ·S.J. Jeng, C.M. Wayman, G. Costrini, J. J. Coleman	1985	4
20	Interface structure of GaAs/AlAs semiconductor superlattices prepared by MOCVD Materials Letters ·S.J. Jeng, C.M. Wayman, G. Costrini, J. J. Coleman	1984	14

About S.J. Jeng

S.J. Jeng is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Condensed Matter Physics and Surfaces, Coatings and Films, having authored 35 papers that have together received 636 indexed citations. Recurring topics across this work include Semiconductor materials and devices (17 papers), Radio Frequency Integrated Circuit Design (16 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), 3D IC and TSV technologies (10 papers), Thin-Film Transistor Technologies (7 papers), Semiconductor Quantum Structures and Devices (7 papers), Photonic and Optical Devices (4 papers) and Silicon and Solar Cell Technologies (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (571 citations), Atomic and Molecular Physics, and Optics (157 citations), General Materials Science (14 citations), Materials Chemistry (132 citations) and Computational Mechanics (52 citations). S.J. Jeng has collaborated with scholars based in United States, Belgium and Germany. Frequent co-authors include G. S. Oehrlein, G. Scilla, C.M. Wayman, D. Ahlgren, S. Subbanna, Jae-Sung Rieh, K. Schonenberg, Andy Stricker, G. Freeman and B. Jagannathan. Their work appears in journals such as Applied Physics Letters, Materials Letters, Journal of Applied Physics, Applied Surface Science and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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