Gordon Schmidt

429 citations

42 papers · 326 indexed · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 35
- GaN-based semiconductor devices and materials 34
Structural Biology 2

Co-authors: Peter Veit (34 shared papers)J. Christen (35 shared papers)F. Bertram (33 shared papers)A. Dadgar (14 shared papers)Marcus Müller (14 shared papers)J. Bläsing (11 shared papers)A. Strittmatter (14 shared papers)Sebastian Metzner (11 shared papers)
Journals: Journal of Crystal Growth (8 papers)Applied Physics Letters (5 papers)Microscopy and Microanalysis (4 papers)physica status solidi (b) (4 papers)Japanese Journal of Applied Physics (3 papers)
Partner nations: Germany Spain China

In The Last Decade

Gordon Schmidt

40 papers receiving 318 citations

Peers

Countries citing papers authored by Gordon Schmidt

Since Specialization

Citations

This map shows the geographic impact of Gordon Schmidt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Gordon Schmidt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Gordon Schmidt more than expected).

Fields of papers citing papers by Gordon Schmidt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Gordon Schmidt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Gordon Schmidt. The network helps show where Gordon Schmidt may publish in the future.

Co-authors

The 25 scholars most cited alongside Gordon Schmidt, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Gordon Schmidt Line = papers co-authored together Gordon Schmidt links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 42 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Optical Emission of Individual GaN Nanocolumns Analyzed with High Spatial Resolution Nano Letters ·A. Urban, Marcus Müller, C. Karbaum, Gordon Schmidt, Peter Veit, J. Malindretos, F. Bertram, J. Christen, A. Rizzi	2015	32
2	Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence Applied Physics Letters ·Gordon Schmidt, Marcus Müller, Peter Veit, F. Bertram, J. Christen, Marlene Glauser, J.‐F. Carlin, Gatien Cosendey, R. Butté, N. Grandjean	2014	29
3	Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet Applied Physics Letters ·Gordon Schmidt, Christoph Berger, Peter Veit, Sebastian Metzner, F. Bertram, J. Bläsing, A. Dadgar, A. Strittmatter, J. Christen, Gordon Callsen, Stefan Kalinowski, A. Hoffmann	2015	23
4	Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply Advanced Optical Materials ·Lai Wang, Xun Wang, F. Bertram, Bowen Sheng, Zhibiao Hao, Yi Luo, Changzheng Sun, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Gordon Schmidt, Peter Veit, J. Christen, Xinqiang Wang	2020	23
5	Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality Journal of Crystal Growth ·Christoph Berger, A. Dadgar, J. Bläsing, A. G. Lesnik, Peter Veit, Gordon Schmidt, Thomas Hempel, J. Christen, A. Krost, A. Strittmatter	2014	23
6	Eliminating stacking faults in semi-polar GaN by AlN interlayers Applied Physics Letters ·A. Dadgar, R. Ravash, Peter Veit, Gordon Schmidt, Marcus Müller, Anja Dempewolf, F. Bertram, Matthias Wieneke, J. Christen, A. Krost	2011	18
7	Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods Scientific Reports ·Gordon Schmidt, Marcus Müller, Peter Veit, Sebastian Metzner, F. Bertram, Jana Hartmann, Hao Zhou, H.‐H. Wehmann, A. Waag, J. Christen	2018	17
8	Sputter Epitaxy of AlN and GaN on Si(111) physica status solidi (a) ·A. Dadgar, Florian Hörich, Ralf Borgmann, J. Bläsing, Gordon Schmidt, Peter Veit, J. Christen, A. Strittmatter	2022	15
9	Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy Journal of Crystal Growth ·Karine Hestroffer, Cory Lund, Onur S. Koksaldi, Haoran Li, Gordon Schmidt, Max Trippel, Peter Veit, F. Bertram, Ning Lü, Qingxiao Wang, J. Christen, Moon J. Kim, Umesh K. Mishra, S. Keller	2017	15
10	Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy Journal of Crystal Growth ·Florian Hörich, Ralf Borgmann, J. Bläsing, Gordon Schmidt, Peter Veit, F. Bertram, J. Christen, A. Strittmatter, A. Dadgar	2021	15
11	Growth and stacking fault reduction in semi‐polar GaN films on planar Si(112) and Si(113) Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·R. Ravash, Peter Veit, Mathias Müller, Gordon Schmidt, Anja Dempewolf, Thomas Hempel, J. Bläsing, F. Bertram, A. Dadgar, J. Christen, A. Krost	2012	13
12	Growth of InGaN/GaN core–shell structures on selectively etched GaN rods by molecular beam epitaxy Journal of Crystal Growth ·Steven M. Albert, A. Bengoechea‐Encabo, M. Sabido-Siller, Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, F. Bertram, M. A. Sánchez-Garcı́a, J. Christen, E. Calleja	2014	9
13	Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping Journal of Crystal Growth ·Christoph Berger, A. G. Lesnik, Thomas Zettler, Gordon Schmidt, Peter Veit, A. Dadgar, J. Bläsing, J. Christen, A. Strittmatter	2016	9
14	Nanoscale cathodoluminescene imaging of III‐nitride‐based LEDs with semipolar quantum wells in a scanning transmission electron microscope physica status solidi (b) ·Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, F. Bertram, Robert A. R. Leute, Dominik Heinz, Junjun Wang, Tobias Meisch, F. Scholz, J. Christen	2015	7
15	Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width Journal of Crystal Growth ·Amalia Fernando-Saavedra, Steven M. Albert, A. Bengoechea‐Encabo, D. López‐Romero, Michael Niehle, Sebastian Metzner, Gordon Schmidt, F. Bertram, M. A. Sánchez-Garcı́a, A. Trampert, J. Christen, E. Calleja	2019	7
16	Individually resolved luminescence from closely stacked GaN/AlN quantum wells Photonics Research ·Bowen Sheng, Gordon Schmidt, F. Bertram, Peter Veit, Yixin Wang, Tao Wang, Xin Rong, Zhaoying Chen, Ping Wang, J. Bläsing, Hideto Miyake, Hongwei Li, Shiping Guo, Zhixin Qin, A. Strittmatter, Bo Shen, J. Christen, Xinqiang Wang	2020	7
17	Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates Applied Physics Letters ·Sylvia Hagedorn, Tim Kolbe, Gordon Schmidt, F. Bertram, Carsten Netzel, A. Knauer, Peter Veit, J. Christen, M. Weyers	2024	6
18	Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H) R. Barthelmeß, Max Beuermann, Dieter Metzner, Gordon Schmidt, D. Westerholt, N. W. Winter, York Christian Gerstenmaier, D. Reznik, M. Ruff, Hans‐Joachim Schulze, A. Willmeroth	2002	5
19	Embedded GaN nanostripes on c‐sapphire for DFB lasers with semipolar quantum wells physica status solidi (b) ·Robert A. R. Leute, Dominik Heinz, Junjun Wang, Tobias Meisch, Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, F. Bertram, J. Christen, Martin Martens, Tim Wernicke, Michael Kneissl, Stefan Jenisch, Steffen Strehle, Oliver Rettig, K. Thonke, F. Scholz	2015	5
20	Outstanding Reliability of Heavy-Ion-Irradiated AlInN/GaN on Silicon HFETs IEEE Transactions on Nuclear Science ·Nahuel Vega, Seshagiri Rao Challa, Romualdo A. Ferreyra, Christian Kristukat, N. Müller, M. E. Debray, Gordon Schmidt, H. De Witte, J. Christen, A. Dadgar, A. Strittmatter	2019	4

About Gordon Schmidt

Gordon Schmidt is a scholar working on Condensed Matter Physics, Structural Biology, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Surfaces, Coatings and Films, having authored 42 papers that have together received 326 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), ZnO doping and properties (15 papers), Ga2O3 and related materials (14 papers), Metal and Thin Film Mechanics (12 papers), Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and devices (9 papers), Nanowire Synthesis and Applications (4 papers) and Electron and X-Ray Spectroscopy Techniques (3 papers). The work is most often cited by research in Condensed Matter Physics (256 citations), Electronic, Optical and Magnetic Materials (119 citations), Structural Biology (7 citations), Materials Chemistry (166 citations) and Mechanics of Materials (82 citations). Gordon Schmidt has collaborated with scholars based in Germany, Spain and China. Frequent co-authors include Peter Veit, J. Christen, F. Bertram, A. Dadgar, Marcus Müller, J. Bläsing, A. Strittmatter, Sebastian Metzner, A. Krost and A. Rizzi. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, Microscopy and Microanalysis, physica status solidi (b) and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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