Hideto Miyake

6.7k total citations
326 papers, 5.5k citations indexed

About

Hideto Miyake is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hideto Miyake has authored 326 papers receiving a total of 5.5k indexed citations (citations by other indexed papers that have themselves been cited), including 257 papers in Condensed Matter Physics, 140 papers in Materials Chemistry and 118 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hideto Miyake's work include GaN-based semiconductor devices and materials (257 papers), Ga2O3 and related materials (113 papers) and Metal and Thin Film Mechanics (93 papers). Hideto Miyake is often cited by papers focused on GaN-based semiconductor devices and materials (257 papers), Ga2O3 and related materials (113 papers) and Metal and Thin Film Mechanics (93 papers). Hideto Miyake collaborates with scholars based in Japan, China and United States. Hideto Miyake's co-authors include Kazumasa Hiramatsu, Atsushi Motogaito, K. Hiramatsu, Kenjiro Uesugi, Yasushi Iyechika, Koichi Sugiyama, Kanako Shojiki, Kenji Yoshino, Chia‐Hung Lin and Akira Nagaoka and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Hideto Miyake

313 papers receiving 5.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hideto Miyake Japan 37 4.3k 2.7k 2.2k 1.9k 1.6k 326 5.5k
Motoaki Iwaya Japan 43 6.2k 1.4× 2.8k 1.0× 3.4k 1.5× 2.0k 1.1× 1.9k 1.2× 390 6.8k
Mitsuru Funato Japan 35 4.3k 1.0× 2.1k 0.8× 2.0k 0.9× 1.3k 0.7× 1.3k 0.8× 210 5.0k
Theeradetch Detchprohm United States 36 4.1k 0.9× 1.9k 0.7× 2.0k 0.9× 1.8k 0.9× 920 0.6× 185 4.7k
Kazumasa Hiramatsu Japan 38 6.9k 1.6× 3.5k 1.3× 3.3k 1.5× 2.3k 1.2× 1.6k 1.0× 200 7.7k
J. Bläsing Germany 39 3.5k 0.8× 3.5k 1.3× 2.2k 1.0× 2.8k 1.4× 1.4k 0.9× 190 6.2k
Patrick Waltereit Germany 35 4.9k 1.1× 2.1k 0.8× 2.2k 1.0× 2.4k 1.3× 881 0.6× 190 5.6k
Seiji Mita United States 34 3.2k 0.7× 1.4k 0.5× 1.9k 0.8× 1.5k 0.8× 939 0.6× 144 3.7k
F. Bertram Germany 33 2.3k 0.5× 3.5k 1.3× 2.2k 1.0× 2.0k 1.0× 769 0.5× 183 5.0k
Tetsuya Takeuchi Japan 40 7.3k 1.7× 2.9k 1.1× 3.4k 1.5× 2.5k 1.3× 2.1k 1.4× 307 8.3k
A. Knauer Germany 36 3.3k 0.8× 1.5k 0.5× 2.0k 0.9× 1.7k 0.9× 983 0.6× 189 4.2k

Countries citing papers authored by Hideto Miyake

Since Specialization
Citations

This map shows the geographic impact of Hideto Miyake's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hideto Miyake with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hideto Miyake more than expected).

Fields of papers citing papers by Hideto Miyake

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hideto Miyake. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hideto Miyake. The network helps show where Hideto Miyake may publish in the future.

Co-authorship network of co-authors of Hideto Miyake

This figure shows the co-authorship network connecting the top 25 collaborators of Hideto Miyake. A scholar is included among the top collaborators of Hideto Miyake based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hideto Miyake. Hideto Miyake is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kangawa, Yoshihiro, Akira Kusaba, Toru Akiyama, et al.. (2025). Chemical vapor deposition of compound semiconductors: process simulation and experimental validation. Applied Physics Express. 19(1). 10101–10101.
2.
3.
Shojiki, Kanako, et al.. (2023). MOVPE growth of AlN and AlGaN films on N-polar annealed and sputtered AlN templates. Journal of Crystal Growth. 617. 127256–127256. 5 indexed citations
4.
Hayashi, Yusuke, Tetsuya Tohei, Yoshikata Nakajima, et al.. (2023). Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates. Journal of Electronic Materials. 52(8). 5099–5108. 1 indexed citations
5.
Shojiki, Kanako, Hideto Miyake, Shuhei Ichikawa, et al.. (2023). 229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide. Applied Physics Express. 16(6). 62006–62006. 7 indexed citations
6.
Kondo, Ryosuke, Eri Matsubara, Sho Iwayama, et al.. (2023). Fabrication of vertical AlGaN-based ultraviolet-B laser diodes using a laser lift-off method. Applied Physics Express. 16(10). 104001–104001. 5 indexed citations
7.
Iwayama, Sho, Tetsuya Takeuchi, Satoshi Kamiyama, et al.. (2022). A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water. Applied Physics Express. 15(11). 116502–116502. 4 indexed citations
8.
Tanaka, Shunya, Kazuki Yamada, Sho Iwayama, et al.. (2022). Reduction of dislocation density in lattice-relaxed Al0.68Ga0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV-B laser diodes. Applied Physics Express. 15(3). 31004–31004. 18 indexed citations
9.
Uesugi, Kenjiro, Shigeyuki Kuboya, Kanako Shojiki, et al.. (2022). 263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities. Applied Physics Express. 15(5). 55501–55501. 37 indexed citations
10.
Zhang, Zexuan, Yusuke Hayashi, Tetsuya Tohei, et al.. (2022). Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning. Science Advances. 8(36). eabo6408–eabo6408. 22 indexed citations
11.
Iwaya, Motoaki, Shunya Tanaka, Kazuki Yamada, et al.. (2021). Recent development of UV-B laser diodes. Japanese Journal of Applied Physics. 61(4). 40501–40501. 19 indexed citations
12.
Tanaka, Shunya, Kazuki Yamada, Sho Iwayama, et al.. (2021). AlGaN-based UV-B laser diode with a high optical confinement factor. Applied Physics Letters. 118(16). 36 indexed citations
13.
Iwayama, Sho, Motoaki Iwaya, Tetsuya Takeuchi, et al.. (2020). High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing. physica status solidi (a). 217(14). 18 indexed citations
14.
Xiao, Shiyu, et al.. (2019). Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy. Japanese Journal of Applied Physics. 58(SC). SC1003–SC1003. 15 indexed citations
15.
Nakamura, Kohji, et al.. (2019). Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures. Japanese Journal of Applied Physics. 58(SC). SCCB30–SCCB30. 17 indexed citations
16.
Shojiki, Kanako, Yusuke Hayashi, Kenjiro Uesugi, & Hideto Miyake. (2019). Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy. Japanese Journal of Applied Physics. 58(SC). SCCB17–SCCB17. 11 indexed citations
17.
Iwayama, Sho, Motoaki Iwaya, Tetsuya Takeuchi, et al.. (2019). Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers. Japanese Journal of Applied Physics. 58(SC). SC1052–SC1052. 38 indexed citations
18.
Shojiki, Kanako, Ryota Ishii, Kenjiro Uesugi, et al.. (2019). Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells. AIP Advances. 9(12). 21 indexed citations
19.
Murotani, Hideaki, et al.. (2018). Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K. Journal of Applied Physics. 123(20). 3 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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