Zhixin Qin

2.0k total citations
87 papers, 1.5k citations indexed

About

Zhixin Qin is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Zhixin Qin has authored 87 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 81 papers in Condensed Matter Physics, 45 papers in Electronic, Optical and Magnetic Materials and 30 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Zhixin Qin's work include GaN-based semiconductor devices and materials (80 papers), Ga2O3 and related materials (45 papers) and ZnO doping and properties (29 papers). Zhixin Qin is often cited by papers focused on GaN-based semiconductor devices and materials (80 papers), Ga2O3 and related materials (45 papers) and ZnO doping and properties (29 papers). Zhixin Qin collaborates with scholars based in China, Romania and Japan. Zhixin Qin's co-authors include Bo Shen, Xinqiang Wang, Fujun Xu, Jiaming Wang, Chenguang He, Lisheng Zhang, Guoyi Zhang, Xuelin Yang, Weikun Ge and Jianchang Yan and has published in prestigious journals such as Advanced Materials, Nature Communications and Nature Materials.

In The Last Decade

Zhixin Qin

84 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zhixin Qin China 20 1.2k 793 720 439 397 87 1.5k
Tsung‐Shine Ko Taiwan 24 806 0.6× 531 0.7× 917 1.3× 271 0.6× 516 1.3× 81 1.5k
J. Kim United States 17 800 0.6× 849 1.1× 1.4k 1.9× 140 0.3× 733 1.8× 31 1.9k
G. H. Gainer United States 13 942 0.8× 492 0.6× 565 0.8× 212 0.5× 409 1.0× 36 1.2k
Chunshuang Chu China 21 1.1k 0.9× 757 1.0× 470 0.7× 453 1.0× 420 1.1× 90 1.3k
Sandip Ghosh India 19 530 0.4× 349 0.4× 998 1.4× 260 0.6× 767 1.9× 79 1.5k
Kangkai Tian China 22 1.1k 0.9× 743 0.9× 496 0.7× 449 1.0× 412 1.0× 76 1.3k
Mingda Zhu United States 17 942 0.8× 710 0.9× 305 0.4× 276 0.6× 1.0k 2.5× 42 1.5k
Ziguang Ma China 13 506 0.4× 275 0.3× 436 0.6× 186 0.4× 387 1.0× 59 833
Guohao Yu China 20 986 0.8× 761 1.0× 615 0.9× 122 0.3× 922 2.3× 104 1.6k
Zhonghai Yu United States 18 380 0.3× 385 0.5× 736 1.0× 241 0.5× 665 1.7× 50 1.1k

Countries citing papers authored by Zhixin Qin

Since Specialization
Citations

This map shows the geographic impact of Zhixin Qin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhixin Qin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhixin Qin more than expected).

Fields of papers citing papers by Zhixin Qin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhixin Qin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhixin Qin. The network helps show where Zhixin Qin may publish in the future.

Co-authorship network of co-authors of Zhixin Qin

This figure shows the co-authorship network connecting the top 25 collaborators of Zhixin Qin. A scholar is included among the top collaborators of Zhixin Qin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhixin Qin. Zhixin Qin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Jiaming, Jing Lang, Fujun Xu, et al.. (2025). Unveiling and eliminating the parasitic hole loss in AlGaN-based deep-ultraviolet light-emitting diodes. Applied Physics Letters. 126(21).
2.
Wang, Jiaming, Fujun Xu, Lisheng Zhang, et al.. (2025). Stacking III‐Nitride Ultraviolet‐B Light Emitters with High Efficiency via a Lattice‐Engineered Architecture. Advanced Materials. 37(42). e08380–e08380.
3.
Wang, Jiaming, Ji Chen, Jing Lang, et al.. (2024). Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters. Nature Communications. 15(1). 9398–9398. 7 indexed citations
4.
Wang, Jiaming, Fujun Xu, Lisheng Zhang, et al.. (2024). Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping. Applied Physics Letters. 124(15). 5 indexed citations
5.
Wang, Jiaming, Fujun Xu, Lisheng Zhang, et al.. (2024). Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer. Applied Physics Letters. 124(6). 5 indexed citations
6.
Xu, Fujun, Jing Lang, Jiaming Wang, et al.. (2023). Transparent p-type layer with highly reflective Rh/Al p-type electrodes for improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes. Japanese Journal of Applied Physics. 62(3). 30904–30904. 16 indexed citations
7.
Xu, Fujun, Jiaming Wang, Jing Lang, et al.. (2021). High quality AlN with uniform in-plane strain on nano-patterned AlN templates achieved by preset strain modulation. Japanese Journal of Applied Physics. 60(12). 120903–120903. 4 indexed citations
8.
Xie, Nan, Fujun Xu, Na Zhang, et al.. (2019). Period size effect induced crystalline quality improvement of AlN on a nano-patterned sapphire substrate. Japanese Journal of Applied Physics. 58(10). 100912–100912. 13 indexed citations
9.
Wang, Jiaming, Fujun Xu, Chenguang He, et al.. (2017). High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition. Scientific Reports. 7(1). 42747–42747. 38 indexed citations
10.
Yang, Xuelin, Lei Guo, Jie Zhang, et al.. (2016). Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition. Scientific Reports. 6(1). 23020–23020. 58 indexed citations
11.
Zhang, Lisheng, Fujun Xu, Jiaming Wang, et al.. (2016). High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography. Scientific Reports. 6(1). 35934–35934. 118 indexed citations
12.
He, Chenguang, Zhixin Qin, Fujun Xu, et al.. (2015). Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers. Scientific Reports. 5(1). 13046–13046. 18 indexed citations
13.
Dong, Peng, Jianchang Yan, Yun Zhang, et al.. (2014). AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency. Journal of Crystal Growth. 395. 9–13. 59 indexed citations
14.
Qin, Zhixin, et al.. (2014). Routing algorithm for wireless sensor networks based on resistance distance. 106. 74–78. 1 indexed citations
15.
Tian, Pengfei, Zhizhong Chen, Shengli Qi, et al.. (2010). Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes. Science China Technological Sciences. 53(2). 301–305. 2 indexed citations
16.
Qin, Zhixin, et al.. (2007). Origins of Double Emission Peaks in Electroluminescence Spectrum from InGaN/GaN MQW LED. Journal of Semiconductors. 28(7). 1121–1124. 1 indexed citations
17.
Jia, Chuanyu, Tongjun Yu, Zhijian Yang, et al.. (2007). Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395to455nm. Applied Physics Letters. 90(21). 20 indexed citations
18.
Kang, Xiangning, et al.. (2007). Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD. Chinese Physics Letters. 24(5). 1365–1367. 2 indexed citations
19.
Kang, Xiangning, et al.. (2006). Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs. Journal of Semiconductors. 27. 20–24. 1 indexed citations
20.
Zhang, Bei, Bei Zhang, Jun Xu, et al.. (2005). Effects of the artificial Ga‐nitride/air periodic nanostructures on current injected GaN‐based light emitters. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2858–2861. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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