H.‐H. Wehmann

783 total citations
44 papers, 653 citations indexed

About

H.‐H. Wehmann is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, H.‐H. Wehmann has authored 44 papers receiving a total of 653 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 20 papers in Condensed Matter Physics. Recurrent topics in H.‐H. Wehmann's work include GaN-based semiconductor devices and materials (20 papers), ZnO doping and properties (19 papers) and Semiconductor Quantum Structures and Devices (11 papers). H.‐H. Wehmann is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), ZnO doping and properties (19 papers) and Semiconductor Quantum Structures and Devices (11 papers). H.‐H. Wehmann collaborates with scholars based in Germany, China and Slovakia. H.‐H. Wehmann's co-authors include A. Waag, A. Schlachetzki, Johannes Ledig, A. Bakin, Xue Wang, Jana Hartmann, Martin Straßburg, B. Postels, D. Hahn and Sönke Fündling and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

H.‐H. Wehmann

44 papers receiving 634 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H.‐H. Wehmann Germany	16	369	305	299	232	190	44	653
P. Bove France	14	244 0.7×	351 1.2×	276 0.9×	228 1.0×	208 1.1×	68	624
J. Teubert Germany	18	328 0.9×	277 0.9×	417 1.4×	256 1.1×	212 1.1×	38	697
Ryota Ishii Japan	14	238 0.6×	220 0.7×	331 1.1×	207 0.9×	162 0.9×	41	580
Johannes Ledig Germany	15	467 1.3×	201 0.7×	459 1.5×	279 1.2×	106 0.6×	33	711
Junxue Ran China	14	358 1.0×	367 1.2×	576 1.9×	402 1.7×	208 1.1×	47	828
Soojeong Choi United States	14	298 0.8×	230 0.8×	376 1.3×	293 1.3×	121 0.6×	29	569
Vitaly Z. Zubialevich Ireland	14	228 0.6×	192 0.6×	421 1.4×	251 1.1×	155 0.8×	70	552
C. Durand France	8	370 1.0×	238 0.8×	434 1.5×	251 1.1×	124 0.7×	8	706
Keun Man Song South Korea	12	306 0.8×	222 0.7×	277 0.9×	189 0.8×	133 0.7×	41	487
X.Z. Xu France	15	273 0.7×	195 0.6×	206 0.7×	154 0.7×	206 1.1×	35	533

Countries citing papers authored by H.‐H. Wehmann

Since Specialization

Citations

This map shows the geographic impact of H.‐H. Wehmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.‐H. Wehmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.‐H. Wehmann more than expected).

Fields of papers citing papers by H.‐H. Wehmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.‐H. Wehmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.‐H. Wehmann. The network helps show where H.‐H. Wehmann may publish in the future.

Co-authorship network of co-authors of H.‐H. Wehmann

This figure shows the co-authorship network connecting the top 25 collaborators of H.‐H. Wehmann. A scholar is included among the top collaborators of H.‐H. Wehmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.‐H. Wehmann. H.‐H. Wehmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gülink, Jan, Jana Hartmann, H.‐H. Wehmann, et al.. (2021). Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale. Nanomaterials. 11(4). 836–836. 22 indexed citations

Römer, Friedhard, Yu Feng, Matteo Meneghini, et al.. (2020). Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel. Semiconductor Science and Technology. 36(1). 14002–14002. 15 indexed citations

Remmele, T., Jan Gülink, Sönke Fündling, et al.. (2018). Defect generation by nitrogen during pulsed sputter deposition of GaN. Journal of Applied Physics. 124(17). 7 indexed citations

Hartmann, Jana, et al.. (2018). Zn acceptor position in GaN:Zn probed by contactless electroreflectance spectroscopy. Applied Physics Letters. 113(3). 8 indexed citations

Schmidt, Gordon, Marcus Müller, Peter Veit, et al.. (2018). Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods. Scientific Reports. 8(1). 16026–16026. 17 indexed citations

Hartmann, Jana, Johannes Ledig, Hao Zhou, et al.. (2018). 3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices. physica status solidi (b). 256(4). 6 indexed citations

Hartmann, Jana, Hao Zhou, Sönke Fündling, et al.. (2017). Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures. Journal of materials research/Pratt's guide to venture capital sources. 32(13). 2456–2463. 4 indexed citations

Ledig, Johannes, et al.. (2017). Photo-assisted Kelvin probe force microscopy investigation of three dimensional GaN structures with various crystal facets, doping types, and wavelengths of illumination. Journal of Applied Physics. 122(8). 15 indexed citations

Krause, Thilo, Michael Hanke, A. Trampert, et al.. (2016). Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core–shell (In,Ga)N/GaN rod light-emitting diodes. Nanotechnology. 27(32). 325707–325707. 15 indexed citations

10.

Ledig, Johannes, Xue Wang, Sönke Fündling, et al.. (2016). Characterization of the internal properties of InGaN/GaN core–shell LEDs (Phys. Status Solidi A 1∕2016). physica status solidi (a). 213(1). 1–1. 12 indexed citations

11.

Hartmann, Jana, Xue Wang, Henning Schuhmann, et al.. (2015). Growth mechanisms of GaN microrods for 3D core–shell LEDs: The influence of silane flow. physica status solidi (a). 212(12). 2830–2836. 34 indexed citations

12.

Ledig, Johannes, Xue Wang, Sönke Fündling, et al.. (2015). Characterization of the internal properties of InGaN/GaN core–shell LEDs. physica status solidi (a). 213(1). 11–18. 10 indexed citations

13.

Caccamo, Lorenzo, Jana Hartmann, Cristian Fàbrega, et al.. (2014). Band Engineered Epitaxial 3D GaN-InGaN Core–Shell Rod Arrays as an Advanced Photoanode for Visible-Light-Driven Water Splitting. ACS Applied Materials & Interfaces. 6(4). 2235–2240. 66 indexed citations

14.

Postels, B., A. Bakin, H.‐H. Wehmann, et al.. (2008). Electrodeposition of ZnO nanorods for device application. Applied Physics A. 91(4). 595–599. 37 indexed citations

15.

Al‐Suleiman, M., Abdelhamid El‐Shaer, A. Bakin, H.‐H. Wehmann, & A. Waag. (2007). Optical investigations and exciton localization in high quality Zn1−xMgxO–ZnO single quantum wells. Applied Physics Letters. 91(8). 24 indexed citations

16.

Novák, J., et al.. (1998). Resistivity anisotropy in ordered InxGa1−xP grown at 640 °C. Applied Physics Letters. 73(3). 369–371. 11 indexed citations

17.

Hahn, D., O. Jaschinski, H.‐H. Wehmann, A. Schlachetzki, & M. von Ortenberg. (1995). Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge. Journal of Electronic Materials. 24(10). 1357–1361. 46 indexed citations

18.

Darmo, J., et al.. (1994). InGaAs Schottky contacts with an iron-doped InP enhancement layer. Journal of Physics D Applied Physics. 27(11). 2414–2417. 3 indexed citations

19.

Wehmann, H.‐H., et al.. (1992). The influence of a hydride preflow on the crystalline quality of InP grown on exactly oriented (100)Si. Journal of Electronic Materials. 21(12). 1141–1146. 7 indexed citations

20.

Wehmann, H.‐H., et al.. (1986). Activation energy of Cd in in _{1− x} Ga _x As _y P _{1− y} on InP (for y = 0 to 1). Electronics Letters. 22(25). 1338–1340. 5 indexed citations

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