Karine Hestroffer

1.2k total citations
40 papers, 1.0k citations indexed

About

Karine Hestroffer is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Karine Hestroffer has authored 40 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Condensed Matter Physics, 24 papers in Electrical and Electronic Engineering and 17 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Karine Hestroffer's work include GaN-based semiconductor devices and materials (31 papers), Ga2O3 and related materials (15 papers) and Semiconductor Quantum Structures and Devices (11 papers). Karine Hestroffer is often cited by papers focused on GaN-based semiconductor devices and materials (31 papers), Ga2O3 and related materials (15 papers) and Semiconductor Quantum Structures and Devices (11 papers). Karine Hestroffer collaborates with scholars based in United States, France and Germany. Karine Hestroffer's co-authors include B. Daudin, S. Keller, Umesh K. Mishra, H. Renevier, Catherine Bougerol, Elaheh Ahmadi, Xun Zheng, Matthew Guidry, C. Leclère and Brian Romanczyk and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Karine Hestroffer

38 papers receiving 969 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Karine Hestroffer United States 19 716 447 443 366 313 40 1.0k
Ryuji Katayama Japan 14 628 0.9× 357 0.8× 288 0.7× 264 0.7× 421 1.3× 129 808
Karen Charlene Cross United States 13 599 0.8× 241 0.5× 322 0.7× 271 0.7× 218 0.7× 17 715
Hajime Fujikura Japan 18 423 0.6× 486 1.1× 301 0.7× 242 0.7× 351 1.1× 65 803
E. Armour United States 16 464 0.6× 517 1.2× 266 0.6× 162 0.4× 436 1.4× 67 868
J. Novák Slovakia 16 552 0.8× 674 1.5× 296 0.7× 315 0.9× 303 1.0× 97 933
F. Widmann France 14 1.1k 1.6× 357 0.8× 493 1.1× 453 1.2× 661 2.1× 21 1.3k
K. Sebald Germany 16 335 0.5× 387 0.9× 333 0.8× 141 0.4× 511 1.6× 65 805
Dong‐Pyo Han Japan 18 899 1.3× 339 0.8× 401 0.9× 356 1.0× 488 1.6× 66 973
Yu. G. Shreter Russia 16 759 1.1× 402 0.9× 446 1.0× 275 0.8× 514 1.6× 60 1.0k
J.D. Brown United States 13 741 1.0× 404 0.9× 201 0.5× 361 1.0× 243 0.8× 27 816

Countries citing papers authored by Karine Hestroffer

Since Specialization
Citations

This map shows the geographic impact of Karine Hestroffer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Karine Hestroffer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Karine Hestroffer more than expected).

Fields of papers citing papers by Karine Hestroffer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Karine Hestroffer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Karine Hestroffer. The network helps show where Karine Hestroffer may publish in the future.

Co-authorship network of co-authors of Karine Hestroffer

This figure shows the co-authorship network connecting the top 25 collaborators of Karine Hestroffer. A scholar is included among the top collaborators of Karine Hestroffer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Karine Hestroffer. Karine Hestroffer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shree, Shivangi, et al.. (2022). Precise electron beam-based target-wavelength trimming for frequency conversion in integrated photonic resonators. Optics Express. 30(5). 6921–6921. 14 indexed citations
2.
Shree, Shivangi, et al.. (2022). Triply-resonant sum frequency conversion with gallium phosphide ring resonators. Optics Express. 31(2). 1516–1516. 14 indexed citations
3.
Cros, A., et al.. (2020). Resonant Raman scattering of core–shell GaN/AlN nanowires. Nanotechnology. 32(8). 85713–85713. 1 indexed citations
4.
Gould, Michael N., Emma Schmidgall, Karine Hestroffer, et al.. (2018). 400%/W second harmonic conversion efficiency in 14 μm-diameter gallium phosphide-on-oxide resonators. Optics Express. 26(26). 33687–33687. 48 indexed citations
6.
Lund, Cory, Karine Hestroffer, Nirupam Hatui, et al.. (2017). Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates. Applied Physics Express. 10(11). 111001–111001. 14 indexed citations
7.
Zúñiga‐Pérez, J., Vincent Consonni, L. Lymperakis, et al.. (2016). Polarity in GaN and ZnO: Theory, measurement, growth, and devices. Applied Physics Reviews. 3(4). 110 indexed citations
8.
Wienecke, Steven, Brian Romanczyk, Matthew Guidry, et al.. (2016). N-polar GaN Cap MISHEMT with record 6.7 W/mm at 94 GHz. 1–2. 4 indexed citations
9.
Zheng, Xun, Elaheh Ahmadi, Karine Hestroffer, et al.. (2016). High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion. 42–45. 24 indexed citations
10.
Hestroffer, Karine, Cory Lund, Haoran Li, et al.. (2016). Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades. physica status solidi (b). 253(4). 626–629. 18 indexed citations
11.
Gupta, Geetak, et al.. (2015). Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base. IEEE Electron Device Letters. 36(5). 439–441. 10 indexed citations
12.
Tizei, Luiz H. G., Sophie Meuret, Katia March, et al.. (2014). A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures. Applied Physics Letters. 105(14). 7 indexed citations
13.
Hestroffer, Karine & B. Daudin. (2013). A geometrical model for the description of the AlN shell morphology in GaN-AlN core-shell nanowires. Journal of Applied Physics. 114(24). 13 indexed citations
14.
Jalabert, D., et al.. (2012). Strain state of GaN nanodisks in AlN nanowires studied by medium energy ion spectroscopy. Nanotechnology. 23(42). 425703–425703. 5 indexed citations
15.
Hestroffer, Karine, C. Leclère, V. Cantelli, et al.. (2012). In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 100(21). 42 indexed citations
16.
Mata, Rafael, A. Cros, Karine Hestroffer, & B. Daudin. (2012). Surface optical phonon modes in GaN nanowire arrays: Dependence on nanowire density and diameter. Physical Review B. 85(3). 40 indexed citations
17.
Daudin, B., Catherine Bougerol, A. Cros, et al.. (2012). Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures. Physics Procedia. 28. 5–16. 3 indexed citations
18.
Mata, Rafael, et al.. (2011). Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature. Journal of Crystal Growth. 334(1). 177–180. 40 indexed citations
19.
Hestroffer, Karine, C. Leclère, Catherine Bougerol, H. Renevier, & B. Daudin. (2011). Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111). Physical Review B. 84(24). 85 indexed citations
20.
Hestroffer, Karine, Rafael Mata, C. Leclère, et al.. (2010). The structural properties of GaN/AlN core–shell nanocolumn heterostructures. Nanotechnology. 21(41). 415702–415702. 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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