H. Omiya

566 total citations
15 papers, 493 citations indexed

About

H. Omiya is a scholar working on Condensed Matter Physics, Mechanics of Materials and Electrical and Electronic Engineering. According to data from OpenAlex, H. Omiya has authored 15 papers receiving a total of 493 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 9 papers in Mechanics of Materials and 7 papers in Electrical and Electronic Engineering. Recurrent topics in H. Omiya's work include GaN-based semiconductor devices and materials (15 papers), Metal and Thin Film Mechanics (9 papers) and Semiconductor materials and devices (5 papers). H. Omiya is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Metal and Thin Film Mechanics (9 papers) and Semiconductor materials and devices (5 papers). H. Omiya collaborates with scholars based in United States, Japan and Germany. H. Omiya's co-authors include F. A. Ponce, S. Srinivasan, Shinji Tanaka, A. Bell, Yasuaki Nakagawa, R. Liu, Takashi Mukai, L. Geng, Juan Cai and Michael R. Stevens and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

H. Omiya

15 papers receiving 483 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Omiya United States	10	418	195	188	171	167	15	493
S. Tottori Japan	7	443 1.1×	206 1.1×	170 0.9×	213 1.2×	115 0.7×	10	489
Frank Lipski Germany	14	520 1.2×	264 1.4×	210 1.1×	216 1.3×	163 1.0×	26	554
Maosheng Hao Japan	8	602 1.4×	287 1.5×	257 1.4×	279 1.6×	159 1.0×	16	695
H. Jönen Germany	14	462 1.1×	215 1.1×	253 1.3×	202 1.2×	95 0.6×	24	522
R. C. Tu Taiwan	11	312 0.7×	222 1.1×	179 1.0×	142 0.8×	65 0.4×	30	424
L. Geng United States	6	324 0.8×	128 0.7×	139 0.7×	105 0.6×	157 0.9×	7	359
Christoph Hums Germany	9	429 1.0×	164 0.8×	132 0.7×	185 1.1×	166 1.0×	15	486
T. Schupp Germany	10	303 0.7×	142 0.7×	169 0.9×	124 0.7×	70 0.4×	24	382
K. Y. Lim South Korea	13	417 1.0×	268 1.4×	146 0.8×	252 1.5×	109 0.7×	44	555
B. Schöttker Germany	10	420 1.0×	211 1.1×	209 1.1×	184 1.1×	85 0.5×	22	478

Countries citing papers authored by H. Omiya

Since Specialization

Citations

This map shows the geographic impact of H. Omiya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Omiya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Omiya more than expected).

Fields of papers citing papers by H. Omiya

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Omiya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Omiya. The network helps show where H. Omiya may publish in the future.

Co-authorship network of co-authors of H. Omiya

This figure shows the co-authorship network connecting the top 25 collaborators of H. Omiya. A scholar is included among the top collaborators of H. Omiya based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Omiya. H. Omiya is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Mei, Jie, R. Liu, F. A. Ponce, H. Omiya, & Takashi Mukai. (2007). Basal-plane slip in InGaN∕GaN heterostructures in the presence of threading dislocations. Applied Physics Letters. 90(17). 13 indexed citations

Liu, R., Jie Mei, S. Srinivasan, et al.. (2006). Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures. Applied Physics Letters. 89(20). 60 indexed citations

Liu, Rong, Sridhar Srinivasan, H. Omiya, et al.. (2006). Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN. Japanese Journal of Applied Physics. 45(6L). L549–L549. 40 indexed citations

Srinivasan, S., Michael R. Stevens, F. A. Ponce, H. Omiya, & Takashi Mukai. (2006). Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112¯2} GaN pyramidal planes. Applied Physics Letters. 89(23). 9 indexed citations

Omiya, H.. (2005). Crystal Structure of Low-Resistance Au-Ni/p-GaN Contacts. AIP conference proceedings. 772. 421–422. 1 indexed citations

Omiya, H., et al.. (2004). Atomic arrangement at the Au∕p-GaN interface in low-resistance contacts. Applied Physics Letters. 85(25). 6143–6145. 30 indexed citations

Bell, A., S. Srinivasan, H. Omiya, et al.. (2004). Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers. Journal of Applied Physics. 95(9). 4670–4674. 103 indexed citations

Ponce, F. A., S. Srinivasan, A. Bell, et al.. (2003). Microstructure and electronic properties of InGaN alloys. physica status solidi (b). 240(2). 273–284. 122 indexed citations

Srinivasan, S., F. Bertram, A. Bell, et al.. (2002). Low Stokes shift in thick and homogeneous InGaN epilayers. Applied Physics Letters. 80(4). 550–552. 54 indexed citations

10.

Bertram, F., S. Srinivasan, L. Geng, et al.. (2002). Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence. Materials Science and Engineering B. 93(1-3). 19–23. 10 indexed citations

11.

Geng, L., F. A. Ponce, Shinji Tanaka, H. Omiya, & Yasuaki Nakagawa. (2001). Surface Morphology of AlxGa1-xN Films Grown by MOCVD. physica status solidi (a). 188(2). 803–806. 12 indexed citations

12.

Geng, Lei, F. A. Ponce, Shunsuke Tanaka, H. Omiya, & Y. Nakagawa. (2001). Surface Morphology of AlxGa1xN Films Grown by MOCVD. physica status solidi (a). 188(2). 803–806. 1 indexed citations

13.

Cai, Juan, F. A. Ponce, Shigeyasu Tanaka, H. Omiya, & Yasuaki Nakagawa. (2001). Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography. physica status solidi (a). 188(2). 833–837. 8 indexed citations

14.

Bertram, F., S. Srinivasan, L. Geng, et al.. (2001). Spatial Variation of Luminescence of InGaN Alloys Measured by Highly-Spatially-Resolved Scanning Catholuminescence. physica status solidi (b). 228(1). 35–39. 8 indexed citations

15.

Srinivasan, S., R. Liu, F. Bertram, et al.. (2001). A Comparison of Rutherford Backscattering Spectroscopy and X-Ray Diffraction to Determine the Composition of Thick InGaN Epilayers. physica status solidi (b). 228(1). 41–44. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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