R. Butté

6.2k total citations · 1 hit paper
137 papers, 4.6k citations indexed

About

R. Butté is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, R. Butté has authored 137 papers receiving a total of 4.6k indexed citations (citations by other indexed papers that have themselves been cited), including 101 papers in Atomic and Molecular Physics, and Optics, 77 papers in Condensed Matter Physics and 44 papers in Electrical and Electronic Engineering. Recurrent topics in R. Butté's work include GaN-based semiconductor devices and materials (77 papers), Semiconductor Quantum Structures and Devices (64 papers) and Strong Light-Matter Interactions (44 papers). R. Butté is often cited by papers focused on GaN-based semiconductor devices and materials (77 papers), Semiconductor Quantum Structures and Devices (64 papers) and Strong Light-Matter Interactions (44 papers). R. Butté collaborates with scholars based in Switzerland, France and United Kingdom. R. Butté's co-authors include N. Grandjean, J.‐F. Carlin, E. Feltin, G. Christmann, A. V. Kavokin, Jeremy J. Baumberg, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, Stavros Christopoulos and Pavlos G. Lagoudakis and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nature Communications.

In The Last Decade

R. Butté

134 papers receiving 4.4k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Room-Temperature Polariton Lasing in Semiconductor Microcavities

2007 772 citations R. Butté, J.‐F. Carlin et al. profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
R. Butté	3.2k	1.8k	1.7k	1.4k	1.1k	137	4.6k
E. Feltin	2.9k 0.9×	3.5k 1.9×	1.5k 0.9×	1.9k 1.4×	1.0k 0.9×	124	5.3k
J.‐F. Carlin	3.7k 1.2×	3.6k 2.0×	1.7k 1.0×	2.7k 1.9×	1.2k 1.1×	196	6.2k
Joachim Piprek	3.3k 1.1×	3.0k 1.6×	911 0.5×	3.0k 2.2×	1.3k 1.2×	182	5.4k
M. Leroux	2.2k 0.7×	3.4k 1.9×	934 0.5×	1.8k 1.3×	1.9k 1.7×	189	4.8k
Gregor Koblmüller	2.0k 0.6×	1.8k 1.0×	2.3k 1.4×	2.3k 1.6×	1.8k 1.6×	154	4.4k
J. Zúñiga‐Pérez	1.1k 0.4×	789 0.4×	789 0.5×	1.5k 1.1×	2.4k 2.1×	146	3.8k
Joseph G. Tischler	2.1k 0.7×	271 0.1×	1.4k 0.8×	2.0k 1.4×	1.5k 1.3×	125	4.2k
T. Taliercio	1.2k 0.4×	1.2k 0.7×	853 0.5×	966 0.7×	1.1k 1.0×	121	2.7k
B. Gayral	2.4k 0.8×	1.5k 0.8×	1.1k 0.7×	2.0k 1.5×	1.2k 1.1×	115	4.0k
L. Viña	3.1k 1.0×	354 0.2×	722 0.4×	1.7k 1.2×	1.1k 1.0×	129	4.0k

Countries citing papers authored by R. Butté

Since Specialization

Citations

This map shows the geographic impact of R. Butté's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Butté with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Butté more than expected).

Fields of papers citing papers by R. Butté

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Butté. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Butté. The network helps show where R. Butté may publish in the future.

Co-authorship network of co-authors of R. Butté

This figure shows the co-authorship network connecting the top 25 collaborators of R. Butté. A scholar is included among the top collaborators of R. Butté based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Butté. R. Butté is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Carlin, J.‐F., et al.. (2025). VN–VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells. APL Materials. 13(3).

Demongodin, Pierre, et al.. (2025). Three-octave supercontinuum generation in thick crystalline aluminum nitride waveguides. Optics Letters. 50(22). 7147–7147.

Butté, R., et al.. (2024). Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode. Applied Physics Letters. 125(16). 2 indexed citations

Alexander, Duncan T. L., et al.. (2023). Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities. Nanomaterials. 13(18). 2569–2569. 4 indexed citations

Walker, P. M., A. V. Yulin, Zakiullah Zaidi, et al.. (2021). Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature. White Rose Research Online (University of Leeds, The University of Sheffield, University of York). 18 indexed citations

Polyakov, A. Y., Camille Haller, R. Butté, et al.. (2020). Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer. Journal of Physics D Applied Physics. 53(44). 445111–445111. 4 indexed citations

Butté, R. & N. Grandjean. (2020). III‐nitride photonic cavities. Nanophotonics. 9(3). 569–598. 19 indexed citations

Liu, Wei, Camille Haller, J.‐F. Carlin, et al.. (2020). Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime. Applied Physics Letters. 116(22). 20 indexed citations

Polyakov, A. Y., Camille Haller, N. B. Smirnov, et al.. (2019). Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes. Journal of Applied Physics. 126(12). 21 indexed citations

10.

Zhang, Hezhi, et al.. (2019). Short cavity InGaN-based laser diodes with cavity length below 300 μm. Semiconductor Science and Technology. 34(8). 85005–85005. 13 indexed citations

11.

Zhang, Hezhi, et al.. (2019). Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes. ECS Journal of Solid State Science and Technology. 9(1). 15019–15019. 6 indexed citations

12.

Haller, Camille, J.‐F. Carlin, Gwénolé Jacopin, et al.. (2018). GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells. Applied Physics Letters. 113(11). 95 indexed citations

13.

Callsen, Gordon, Thomas Kure, Markus R. Wagner, R. Butté, & N. Grandjean. (2018). Excited states of neutral donor bound excitons in GaN. Journal of Applied Physics. 123(21). 10 indexed citations

14.

Rousseau, Ian, Gordon Callsen, Gwénolé Jacopin, et al.. (2018). Optical absorption and oxygen passivation of surface states in III-nitride photonic devices. Journal of Applied Physics. 123(11). 20 indexed citations

15.

Butté, R., Lise Lahourcade, Gordon Callsen, et al.. (2018). Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations. Applied Physics Letters. 112(3). 28 indexed citations

16.

Haller, Camille, J.‐F. Carlin, Gwénolé Jacopin, et al.. (2017). Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency. Applied Physics Letters. 111(26). 104 indexed citations

17.

Lymperakis, L., Jörg Neugebauer, H. Eisele, et al.. (2017). Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯) surfaces. Applied Physics Letters. 110(2). 5 indexed citations

18.

Rigutti, Lorenzo, Lorenzo Mancini, David Hernández‐Maldonado, et al.. (2016). Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N. Journal of Applied Physics. 119(10). 49 indexed citations

19.

Jacopin, Gwénolé, et al.. (2016). Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells. Journal of Applied Physics. 119(20). 1 indexed citations

20.

Duchamp, Martial, H. Eisele, J.‐F. Carlin, et al.. (2016). Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures. Applied Physics Letters. 109(13). 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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