A. Bengoechea‐Encabo

728 citations

35 papers · 549 indexed · h-index 15

Co-authors: M. A. Sánchez-Garcı́a E. Calleja Steven M. Albert A. Trampert U. Jahn Xiangyang Kong E. Luna Sergio Fernández‐Garrido
Topics: GaN-based semiconductor devices and materials (34 papers)ZnO doping and properties (20 papers)Ga2O3 and related materials (17 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Applied Physics Letters Journal of Applied Physics Sensors and Actuators B Chemical
Partner nations: Spain Germany France

In The Last Decade

A. Bengoechea‐Encabo

34 papers receiving 543 citations

Peers

Countries citing papers authored by A. Bengoechea‐Encabo

Since Specialization

Citations

This map shows the geographic impact of A. Bengoechea‐Encabo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Bengoechea‐Encabo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Bengoechea‐Encabo more than expected).

Fields of papers citing papers by A. Bengoechea‐Encabo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Bengoechea‐Encabo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Bengoechea‐Encabo. The network helps show where A. Bengoechea‐Encabo may publish in the future.

Co-authorship network of co-authors of A. Bengoechea‐Encabo

This figure shows the co-authorship network connecting the top 25 collaborators of A. Bengoechea‐Encabo. A scholar is included among the top collaborators of A. Bengoechea‐Encabo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Bengoechea‐Encabo. A. Bengoechea‐Encabo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Fabrication of non-polar AlN films by ICP etching and overgrowth by MBE 2024 ·Journal of Crystal Growth ·(unknown),Steven M. Albert,A. Bengoechea‐Encabo,Gordon Schmidt,F. Bertram,(unknown),A. Trampert,(unknown),M. A. Sánchez-Garcı́a,E. Calleja	1
2	Selective area growth of high quality GaN nanocolumns on Si(0 0 1) by plasma assisted molecular beam epitaxy 2023 ·Journal of Crystal Growth ·A. Bengoechea‐Encabo,Steven M. Albert,(unknown),A. Trampert,E. Calleja	0
3	Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy 2023 ·Journal of Crystal Growth ·(unknown),Steven M. Albert,A. Bengoechea‐Encabo,A. Trampert,(unknown),M. A. Sánchez-Garcı́a,E. Calleja	4
4	Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates 2017 ·Nanotechnology ·A. Bengoechea‐Encabo,Steven M. Albert,Marcus Müller,(unknown),Peter Veit,F. Bertram,M. A. Sánchez-Garcı́a,J. Zúñiga‐Pérez,(unknown),J. Christen,E. Calleja	6
5	Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires 2016 ·Physical review. B. ·Ž. Gačević,Nenad Vukmirović,(unknown),Almudena Torres‐Pardo,Marcus Müller,Sebastian Metzner,Steven M. Albert,A. Bengoechea‐Encabo,F. Bertram,Peter Veit,J. Christen,J.M. González-Calbet,E. Calleja	15
6	Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns 2016 ·Nanotechnology ·Xiang-Shan Kong,(unknown),Steven M. Albert,A. Bengoechea‐Encabo,M. A. Sánchez-Garcı́a,E. Calleja,Claudia Draxl,A. Trampert	14
7	Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (1122) GaN templates 2015 ·APL Materials ·(unknown),A. Trampert,Steven M. Albert,A. Bengoechea‐Encabo,E. Calleja	3
8	Selective area growth of III-nitride nanorods on polar, semi-polar, and non-polar orientations: device applications 2015 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Steven M. Albert,A. Bengoechea‐Encabo,D. López‐Romero,P. de Mierry,J. Zúñiga‐Pérez,Xiangyang Kong,A. Trampert,M. A. Sánchez-Garcı́a,E. Calleja	2
9	Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy 2015 ·Journal of Microscopy ·(unknown),D. Cherns,(unknown),A. Bengoechea‐Encabo,Miguel Á. Alfonso‐Sánchez,E. Calleja,Tilman Schimpke,Martin Straßburg	5
10	Demonstration of (In, Ga)N/GaN Core–Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars 2015 ·Crystal Growth & Design ·Steven M. Albert,A. Bengoechea‐Encabo,Johannes Ledig,Tilman Schimpke,M. A. Sánchez-Garcı́a,Martin Straßburg,A. Waag,E. Calleja	14
11	Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy 2015 ·Crystal Growth & Design ·Steven M. Albert,A. Bengoechea‐Encabo,Xiang Kong,M. A. Sánchez-Garcı́a,A. Trampert,E. Calleja	15
12	Lattice pulling effect and strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures grown on GaN‐buffered Si(111) substrate 2015 ·physica status solidi (a) ·Xiang-Shan Kong,Steven M. Albert,A. Bengoechea‐Encabo,M. A. Sánchez-Garcı́a,E. Calleja,A. Trampert	11
13	Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range 2014 ·Nanotechnology ·A. Bengoechea‐Encabo,Steven M. Albert,D. López‐Romero,Pierre Lefèbvre,(unknown),Almudena Torres‐Pardo,J.M. González-Calbet,M. A. Sánchez-Garcı́a,E. Calleja	19
14	Advances in MBE Selective Area Growth of III-Nitride Nanostructures: From NanoLEDs to Pseudo Substrates 2014 ·International Journal of High Speed Electronics and Systems ·Steven M. Albert,A. Bengoechea‐Encabo,(unknown),(unknown),M. A. Sánchez-Garcı́a,E. Calleja,Pierre Lefèbvre,Xiang Kong,U. Jahn,A. Trampert,Marcus Müller,F. Bertram,Gordon Schmidt,Peter Veit,S. Petzold,J. Christen,P. de Mierry,J. Zúñiga‐Pérez	2
15	Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission 2013 ·Nanotechnology ·Steven M. Albert,A. Bengoechea‐Encabo,M. A. Sánchez-Garcı́a,Xiangyang Kong,A. Trampert,E. Calleja	52
16	Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires 2012 ·Nanotechnology ·Xiang-Shan Kong,Steven M. Albert,A. Bengoechea‐Encabo,M. A. Sánchez-Garcı́a,E. Calleja,A. Trampert	24
17	Fabrication of GaN nanorods by focused ion beam 2012 ·Microelectronic Engineering ·Javier Martı́nez,(unknown),A. Bengoechea‐Encabo,Steven M. Albert,M. A. Sánchez-Garcı́a,E. Calleja	2
18	Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies 2012 ·Applied Physics Letters ·Steven M. Albert,A. Bengoechea‐Encabo,Pierre Lefèbvre,(unknown),M. A. Sánchez-Garcı́a,E. Calleja,U. Jahn,A. Trampert	27
19	E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods 2012 ·Microelectronic Engineering ·(unknown),A. Bengoechea‐Encabo,Steven M. Albert,Pierre Lefèbvre,Javier Martı́nez,M. A. Sánchez-Garcı́a,(unknown),E. Calleja	4
20	Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns 2011 ·Nanoscale Research Letters ·(unknown),A. Bengoechea‐Encabo,Steven M. Albert,Javier Martı́nez,M. A. Sánchez-Garcı́a,A. Trampert,E. Calleja	12

About A. Bengoechea‐Encabo

A. Bengoechea‐Encabo is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films, having authored 35 papers that have together received 549 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), ZnO doping and properties (20 papers) and Ga2O3 and related materials (17 papers). The work is most often cited by research in Condensed Matter Physics (481 citations), Electronic, Optical and Magnetic Materials (277 citations) and Materials Chemistry (344 citations). A. Bengoechea‐Encabo has collaborated with scholars based in Spain, Germany and France. Frequent co-authors include M. A. Sánchez-Garcı́a, E. Calleja, Steven M. Albert, A. Trampert, U. Jahn, Xiangyang Kong, E. Luna, Sergio Fernández‐Garrido, J. Grandal and Jelena Ristić. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Sensors and Actuators B Chemical.

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