S. Tottori

572 total citations
10 papers, 489 citations indexed

About

S. Tottori is a scholar working on Condensed Matter Physics, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, S. Tottori has authored 10 papers receiving a total of 489 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Condensed Matter Physics, 5 papers in Materials Chemistry and 4 papers in Mechanics of Materials. Recurrent topics in S. Tottori's work include GaN-based semiconductor devices and materials (10 papers), ZnO doping and properties (5 papers) and Metal and Thin Film Mechanics (4 papers). S. Tottori is often cited by papers focused on GaN-based semiconductor devices and materials (10 papers), ZnO doping and properties (5 papers) and Metal and Thin Film Mechanics (4 papers). S. Tottori collaborates with scholars based in Japan, South Korea and United Kingdom. S. Tottori's co-authors include Shiro Sakai, Katsushi Nishino, Yoshiki Naoi, Maosheng Hao, Satoshi Kurai, Tomoya Sugahara, Kenji Yamashita, Linda T. Romano, Hisao Satô and R. S. Qhalid Fareed and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

S. Tottori

10 papers receiving 469 citations

Peers

S. Tottori

CMP

EOMM

MC

AMPO

EEE

Hiroya Kimura Japan

Koji Uematsu Japan

R. A. Skogman United States

B. Schöttker Germany

K. Y. Lim South Korea

Kensaku Motoki Japan

R. C. Tu Taiwan

A. J. Ptak United States

A. S. Zubrilov Russia

H. Omiya United States

Hiroya Kimura Japan

S. Tottori

429 ×1.0

CMP

232 ×1.1

EOMM

209 ×1.0

MC

135 ×0.8

AMPO

164 ×1.0

EEE

Citations per year, relative to S. Tottori S. Tottori (= 1×) peers Hiroya Kimura

Countries citing papers authored by S. Tottori

Since Specialization

Citations

This map shows the geographic impact of S. Tottori's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Tottori with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Tottori more than expected).

Fields of papers citing papers by S. Tottori

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Tottori. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Tottori. The network helps show where S. Tottori may publish in the future.

Co-authorship network of co-authors of S. Tottori

This figure shows the co-authorship network connecting the top 25 collaborators of S. Tottori. A scholar is included among the top collaborators of S. Tottori based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Tottori. S. Tottori is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

1.

Fareed, R. S. Qhalid, S. Tottori, Takeshi Inaoka, Katsushi Nishino, & Shiro Sakai. (1999). Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method. Journal of Crystal Growth. 207(3). 174–178. 5 indexed citations

2.

Wang, Jiannong, R. S. Qhalid Fareed, M. Hao, et al.. (1999). Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method. Journal of Applied Physics. 85(3). 1895–1899. 11 indexed citations

3.

Hao, M., Sourindra Mahanty, T. Sugahara, et al.. (1999). Configuration of dislocations in lateral overgrowth GaN films. Journal of Applied Physics. 85(9). 6497–6501. 25 indexed citations

4.

Sugahara, T., et al.. (1999). Investigation of InGaN/GaN Quantum Wells Grown on Sapphire and Bulk GaN Substrates. physica status solidi (b). 216(1). 273–277. 7 indexed citations

5.

Fareed, R. S. Qhalid, S. Tottori, Katsushi Nishino, & Shiro Sakai. (1999). Surface morphology studies on sublimation grown GaN by atomic force microscopy. Journal of Crystal Growth. 200(3-4). 348–352. 11 indexed citations

6.

Hao, M., Sourindra Mahanty, R. S. Qhalid Fareed, et al.. (1999). Infrared properties of bulk GaN. Applied Physics Letters. 74(19). 2788–2790. 14 indexed citations

7.

Hao, Maosheng, T. Sugahara, S. Tottori, et al.. (1998). Correlation between dislocations and luminescence in GaN. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3419. 34190J–34190J. 2 indexed citations

8.

Sugahara, Tomoya, Hisao Satô, Maosheng Hao, et al.. (1998). Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN. Japanese Journal of Applied Physics. 37(4A). L398–L398. 405 indexed citations

9.

Sugahara, T., Yoshiki Naoi, Satoshi Kurai, et al.. (1998). Growth of Bulk GaN by Sublimation Method. Materials science forum. 264-268. 1107–1110. 2 indexed citations

10.

Tottori, S., Hisao Satô, Maosheng Hao, et al.. (1998). Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique. Japanese Journal of Applied Physics. 37(8R). 4475–4475. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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