P. Fahey

2.2k total citations · 1 hit paper
13 papers, 1.6k citations indexed

About

P. Fahey is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, P. Fahey has authored 13 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 2 papers in Computational Mechanics. Recurrent topics in P. Fahey's work include Silicon and Solar Cell Technologies (12 papers), Semiconductor materials and interfaces (11 papers) and Semiconductor materials and devices (4 papers). P. Fahey is often cited by papers focused on Silicon and Solar Cell Technologies (12 papers), Semiconductor materials and interfaces (11 papers) and Semiconductor materials and devices (4 papers). P. Fahey collaborates with scholars based in United States and Italy. P. Fahey's co-authors include J.D. Plummer, Peter B. Griffin, R.W. Dutton, S. M. Hu, R.W. Dutton, Masoud Moslehi, G. Scilla, Swaminathan P. Iyer, J. Slinkman and S. R. Stiffler and has published in prestigious journals such as Physical Review Letters, Reviews of Modern Physics and Physical review. B, Condensed matter.

In The Last Decade

P. Fahey

13 papers receiving 1.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Point defects and dopant diffusion in silicon

1989 1.1k citations P. Fahey, Peter B. Griffin et al. Reviews of Modern Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. Fahey United States	9	1.5k	935	407	225	113	13	1.6k
T. O. Sedgwick United States	19	1.2k 0.8×	626 0.7×	435 1.1×	159 0.7×	146 1.3×	78	1.4k
K.J. Reeson United Kingdom	21	1.7k 1.2×	1.2k 1.2×	604 1.5×	376 1.7×	216 1.9×	102	2.0k
Seijiro Furukawa Japan	20	952 0.6×	618 0.7×	398 1.0×	254 1.1×	138 1.2×	99	1.3k
H. L. Glass United States	17	634 0.4×	398 0.4×	394 1.0×	98 0.4×	68 0.6×	57	910
J. M. Bonar United Kingdom	15	1.0k 0.7×	899 1.0×	462 1.1×	109 0.5×	118 1.0×	67	1.3k
G. F. A. van de Walle Netherlands	18	812 0.6×	689 0.7×	269 0.7×	202 0.9×	108 1.0×	45	1.0k
J.L. Regolini France	22	1.3k 0.9×	559 0.6×	473 1.2×	108 0.5×	261 2.3×	97	1.5k
B.J. Sealy United Kingdom	17	836 0.6×	424 0.5×	509 1.3×	236 1.0×	111 1.0×	111	1.1k
P.L.F. Hemment United Kingdom	22	1.4k 1.0×	287 0.3×	595 1.5×	416 1.8×	256 2.3×	147	1.6k
U. G�sele United States	11	791 0.5×	404 0.4×	371 0.9×	59 0.3×	137 1.2×	16	911

Countries citing papers authored by P. Fahey

Since Specialization

Citations

This map shows the geographic impact of P. Fahey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Fahey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Fahey more than expected).

Fields of papers citing papers by P. Fahey

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Fahey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Fahey. The network helps show where P. Fahey may publish in the future.

Co-authorship network of co-authors of P. Fahey

This figure shows the co-authorship network connecting the top 25 collaborators of P. Fahey. A scholar is included among the top collaborators of P. Fahey based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Fahey. P. Fahey is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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13 of 13 papers shown

1.

Fahey, P., et al.. (1992). Stress-induced dislocations in silicon integrated circuits. IBM Journal of Research and Development. 36(2). 158–182. 58 indexed citations

2.

Wittmer, M., P. Fahey, J. Cotte, Subramanian S. Iyer, & G. Scilla. (1992). Silicide formation and dopant diffusion in silicon. Physical review. B, Condensed matter. 45(19). 11383–11386. 2 indexed citations

3.

Wittmer, M., P. Fahey, G. Scilla, Swaminathan P. Iyer, & M. J. Tejwani. (1991). Novel diffusion phenomenon of dopants in silicon at low temperatures. Physical Review Letters. 66(5). 632–635. 9 indexed citations

4.

Fahey, P., Swaminathan P. Iyer, & G. Scilla. (1989). Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si. Applied Physics Letters. 54(9). 843–845. 77 indexed citations

5.

Fahey, P. & M. Wittmer. (1989). Low-Temperature Diffusion of Dopants in Silicon. MRS Proceedings. 163. 4 indexed citations

6.

Fahey, P., Peter B. Griffin, & J.D. Plummer. (1989). Point defects and dopant diffusion in silicon. Reviews of Modern Physics. 61(2). 289–384. 1064 indexed citations breakdown →

7.

Fahey, P. & R.W. Dutton. (1988). Investigation of point-defect generation in silicon during oxidation of a deposited WSi2 layer. Applied Physics Letters. 52(13). 1092–1094. 6 indexed citations

8.

Fahey, P. & S. Solmi. (1986). Behavior of dopant diffusion in a silicon-on-insulator structure formed by high-dose oxygen implantation. Journal of Applied Physics. 60(12). 4329–4332. 3 indexed citations

9.

Griffin, Peter B., P. Fahey, J.D. Plummer, & R.W. Dutton. (1985). Measurement of silicon interstitial diffusivity. Applied Physics Letters. 47(3). 319–321. 51 indexed citations

10.

Fahey, P., et al.. (1985). Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in silicon. Applied Physics Letters. 46(8). 784–786. 116 indexed citations

11.

Fahey, P., R.W. Dutton, & S. M. Hu. (1984). Supersaturation of self-interstitials and undersaturation of vacancies during phosphorus diffusion in silicon. Applied Physics Letters. 44(8). 777–779. 64 indexed citations

12.

Fahey, P., R.W. Dutton, & Masoud Moslehi. (1983). Effect of thermal nitridation processes on boron and phosphorus diffusion in 〈100〉 silicon. Applied Physics Letters. 43(7). 683–685. 54 indexed citations

13.

Hu, S. M., P. Fahey, & R.W. Dutton. (1983). On models of phosphorus diffusion in silicon. Journal of Applied Physics. 54(12). 6912–6922. 102 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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