G. Braithwaite

563 citations

26 papers · 409 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Carbide Semiconductor Technologies
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 23
- Advancements in Semiconductor Devices and Circuit Design 19
- Semiconductor materials and devices 19
- Integrated Circuits and Semiconductor Failure Analysis 9
- Thin-Film Transistor Technologies 4
- Silicon Carbide Semiconductor Technologies 4
Atomic and Molecular Physics, and Optics 9
- Semiconductor Quantum Structures and Devices 6
- Semiconductor materials and interfaces 2

Co-authors: Anthony Lochtefeld M. T. Currie Mayank T. Bulsara T. A. Langdo V. K. Yang J.G. Fiorenza C. W. Leitz Mark Somerville
Journals: Applied Physics Letters (4 papers)IEEE Electron Device Letters (2 papers)Semiconductor Science and Technology (2 papers)Solid-State Electronics (2 papers)Thin Solid Films (2 papers)
Partner nations: United Kingdom United States Singapore

In The Last Decade

G. Braithwaite

23 papers receiving 371 citations

Peers

Countries citing papers authored by G. Braithwaite

Since Specialization

Citations

This map shows the geographic impact of G. Braithwaite's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Braithwaite with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Braithwaite more than expected).

Fields of papers citing papers by G. Braithwaite

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Braithwaite. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Braithwaite. The network helps show where G. Braithwaite may publish in the future.

Co-authors

The 25 scholars most cited alongside G. Braithwaite, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Braithwaite Line = papers co-authored together G. Braithwaite links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Advanced Process Control (APC) for Selective EPI process in 300mm Fab Hongying Peng, Yasuhumi Matsuo, Katy Morley, Shahhaf Munzer Al, الدرابسة ، رياض أحمد صالح عودة ، أحمد سليمان, Eduard Vasylovych Kolisnichenko, Juli Sinha, Юлия Евгеньевна Трубина, C. Gaire, J. Holt, G. Braithwaite, Dali Shao, Sup 黄小龙	2020	0
2	Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates Thin Solid Films ·C. W. Leitz, C.J. Vineis, John A. Carlin, J.G. Fiorenza, G. Braithwaite, R. Westhoff, V. K. Yang, M. Carroll, T. A. Langdo, K. Matthews, Puneet Kohli, M. Rödder, R. Wise, Anthony Lochtefeld	2006	5
3	DC and RF characterization of fully depleted strained SOI MOSFETs Mia Stiernman, T. A. Langdo, IAN KEMP, J.G. Fiorenza, P.W. Wyatt, M. T. Currie, C. W. Leitz, G. Braithwaite, M. Fritze, X. Y., D. Yost, Zhiyuan Cheng, Anthony Lochtefeld, L. Tanteri	2005	2
4	Fully Depleted n-MOSFETs on Supercritical Thickness Strained SOI IEEE Electron Device Letters ·Isaac Lauer, T. A. Langdo, Zhiyuan Cheng, J.G. Fiorenza, G. Braithwaite, M. T. Currie, C. W. Leitz, Anthony Lochtefeld, Wenyue Zu, Mayank T. Bulsara, Mark Somerville, D.A. Antoniadis	2004	36
5	Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs J.G. Fiorenza, G. Braithwaite, C. W. Leitz, M. T. Currie, Zhiyuan Cheng, V. K. Yang, T. A. Langdo, John A. Carlin, Mark Somerville, Anthony Lochtefeld, Wenyue Zu, Mayank T. Bulsara	2004	5
6	Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient Applied Surface Science ·L. K. Bera, Schweizerischer Juristentag, N. Balasubramanian, G. Braithwaite, M. T. Currie, Suriel Raúl, Di Wang, R. Hammond, Anthony Lochtefeld, Mayank T. Bulsara, Eugene A. Fitzgerald	2003	14
7	Scalability of strained-Si nMOSFETs down to 25 nm gate length IEEE Electron Device Letters ·Jung-Suk Goo, Qian Xiang, Yuzuru Takamura, Haihong Wang, Yanming Chen, A A Zhilinskaia, Sandra Meijer, Paul R. Besser, Maxim Sidorov, Angelina Samantha Halder, Anthony Lochtefeld, G. Braithwaite, M. T. Currie, R. Hammond, Mayank T. Bulsara, Ming-Ren Lin	2003	44
8	Advanced SiGe-free Strained Si on Insulator Substrates: Thermal Stability and Carrier Mobility Enhancement T. A. Langdo, M. Erdtmann, C. W. Leitz, M. T. Currie, Anthony Lochtefeld, Zhiyuan Cheng, John A. Carlin, V. K. Yang, C.J. Vineis, Din Gx, G. Braithwaite, Wenyue Zu, Mayank T. Bulsara	2003	2
9	Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise А. А. Курбанова, Michael J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Phillips, O. A. Mironov, E. H. C. Parker, T. E. Whall, A.M. Waite, A G R Evans	2001	9
10	On the mobility extraction for HMOSFETs Solid-State Electronics ·Shelly Matthews, A G R Evans, G. Braithwaite, Savaş Kaya, J.R. Watling, A. Asenov	2001	0
11	Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices Michael J. Palmer, G. Braithwaite, А. А. Курбанова, E. H. C. Parker, T. E. Whall, Victoria Alekseevna Serdaeva, Savaş Kaya, J.R. Watling, Asen Asenov, John R. Barker, A.M. Waite, A G R Evans	2001	6
12	Indication of velocity overshoot in strained Si_0.8Ge_0.2p-channel MOSFETs Semiconductor Science and Technology ·Savaş Kaya, Victoria Alekseevna Serdaeva, J.R. Watling, A. Asenov, John R. Barker, Darin Pradittatsanee, G. Braithwaite, T. E. Whall, E. H. C. Parker	2000	10
13	Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor Microelectronic Engineering ·Darin Pradittatsanee, G. Braithwaite, J. Zomerplaag, T. E. Whall, E. H. C. Parker	2000	5
14	Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes Applied Physics Letters ·Michael J. Kane, G. Braithwaite, M. T. Emeny, David S. Lee, Trevor Martin, Jaime G Barahona Baduy	2000	28
15	Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures Applied Physics Letters ·Darin Pradittatsanee, G. Braithwaite, M. Myronov, O. A. Mironov, E. H. C. Parker, T. E. Whall	2000	15
16	Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels Applied Physics Letters ·T. J. Grasby, Elvi Susanti Syam S, P. J. Phillips, Abdelmajid Daoud, R. J. H. Morris, G. Braithwaite, T. E. Whall, E. H. C. Parker, R. Hammond, Andrew P. Knights, P. G. Coleman	1999	15
17	Hot hole energy relaxation in Si/Si0.8Ge0.2 two dimensional hole gases Journal of Applied Physics ·G. Braithwaite, Michael J. Billington, E. H. C. Parker, T. E. Whall, G. Brunthaler, G. Bauer	1997	10
18	Emission Efficiency in InAs LEDs Controlled by Surface Recombination MRS Proceedings ·Michael J. Kane, G. Braithwaite, M. T. Emeny, David S. Lee, Trevor Martin, D.R. Wight	1996	6
19	Effect in Coherently Strained B-Doped (001)SiGe/Si Heterostructures Acta Physica Polonica A ·П. А. Бодров, O. A. Mironov, Anik Khotimah, G. Braithwaite, Michael J. Billington, E. H. C. Parker, P. J. Phillips	1995	0
20	Schottky - Barrier Tunnelling Spectroscopy of Si:B Delta Layers MRS Proceedings ·امیر جوادی, G. Braithwaite, P. J. Phillips, R. A. A. Kubiak, E. H. C. Parker, T. E. Whall, Phil-Hyu Lee, A.G. O’Neill	1991	2

About G. Braithwaite

G. Braithwaite is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Industrial and Manufacturing Engineering, Materials Chemistry and Biomedical Engineering, having authored 26 papers that have together received 409 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (19 papers), Semiconductor materials and devices (19 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Semiconductor Quantum Structures and Devices (6 papers), Thin-Film Transistor Technologies (4 papers), Silicon Carbide Semiconductor Technologies (4 papers), Silicon Nanostructures and Photoluminescence (3 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (391 citations), Atomic and Molecular Physics, and Optics (120 citations), Biomedical Engineering (76 citations), Structural Biology (2 citations) and Acoustics and Ultrasonics (1 citation). G. Braithwaite has collaborated with scholars based in United Kingdom, United States and Singapore. Frequent co-authors include Anthony Lochtefeld, M. T. Currie, Mayank T. Bulsara, T. A. Langdo, V. K. Yang, J.G. Fiorenza, C. W. Leitz, Mark Somerville, R. Hammond and John A. Carlin. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Semiconductor Science and Technology, Solid-State Electronics and Thin Solid Films.

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