R. Wise

1.3k total citations
73 papers, 851 citations indexed

About

R. Wise is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, R. Wise has authored 73 papers receiving a total of 851 indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 7 papers in Biomedical Engineering. Recurrent topics in R. Wise's work include Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (50 papers) and Silicon Carbide Semiconductor Technologies (20 papers). R. Wise is often cited by papers focused on Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (50 papers) and Silicon Carbide Semiconductor Technologies (20 papers). R. Wise collaborates with scholars based in United States, Italy and Sweden. R. Wise's co-authors include Susanna Reggiani, Elena Gnani, A. Gnudi, G. Baccarani, P.R. Chidambaram, C. Machala, S. Chakravarthi, C. Bowen, S. Pendharkar and M. Denison and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

R. Wise

70 papers receiving 826 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R. Wise United States	18	743	142	107	94	32	73	851
Sung Hyuk Kim South Korea	10	256 0.3×	194 1.4×	57 0.5×	57 0.6×	51 1.6×	34	368
Luxmi United States	8	147 0.2×	308 2.2×	97 0.9×	88 0.9×	27 0.8×	13	401
J. Yang United States	10	487 0.7×	98 0.7×	107 1.0×	17 0.2×	125 3.9×	14	590
I. G. Jenkins United States	8	257 0.3×	303 2.1×	55 0.5×	149 1.6×	192 6.0×	11	497
Joel Barnett United States	20	1.0k 1.4×	306 2.2×	113 1.1×	115 1.2×	80 2.5×	62	1.1k
A. Lowe United Kingdom	10	252 0.3×	183 1.3×	38 0.4×	20 0.2×	19 0.6×	26	404
J. B. Petit United States	7	252 0.3×	50 0.4×	71 0.7×	10 0.1×	61 1.9×	12	313
C.E. Chryssou United Kingdom	13	454 0.6×	369 2.6×	228 2.1×	154 1.6×	30 0.9×	23	630

Countries citing papers authored by R. Wise

Since Specialization

Citations

This map shows the geographic impact of R. Wise's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Wise with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Wise more than expected).

Fields of papers citing papers by R. Wise

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Wise. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Wise. The network helps show where R. Wise may publish in the future.

Co-authorship network of co-authors of R. Wise

This figure shows the co-authorship network connecting the top 25 collaborators of R. Wise. A scholar is included among the top collaborators of R. Wise based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Wise. R. Wise is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Reggiani, Susanna, G. Barone, Elena Gnani, et al.. (2014). Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 193–196. 1 indexed citations

Reggiani, Susanna, G. Barone, Elena Gnani, et al.. (2014). TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 333–336. 1 indexed citations

Reggiani, Susanna, G. Baccarani, Elena Gnani, et al.. (2011). Full understanding of hot-carrier-induced degradation in STI-based LDMOS transistors in the impact-ionization operating regime. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 152–155. 18 indexed citations

Reggiani, Susanna, G. Baccarani, Elena Gnani, et al.. (2011). Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight. Solid-State Electronics. 65-66. 57–63. 8 indexed citations

Steinmann, Philipp, et al.. (2011). High Performance Metal-Insulator-Metal Capacitors with Er2O3 on ALD SiO2 for RF Applications. Journal of The Electrochemical Society. 158(12). H1289–H1289. 20 indexed citations

Diercks, David R., et al.. (2010). Using a <670> zone axis for convergent beam electron diffraction measurements of lattice strain in strained silicon. Journal of Microscopy. 239(2). 154–158. 2 indexed citations

Reggiani, Susanna, G. Baccarani, Elena Gnani, et al.. (2010). Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 311–314. 18 indexed citations

Moen, Kurt A., Partha Sarathi Chakraborty, Marco Bellini, et al.. (2010). Improved 2-D regional transit time analysis for optimized scaling of SiGe HBTs. 16. 257–260. 4 indexed citations

Reggiani, Susanna, G. Baccarani, Elena Gnani, et al.. (2010). Numerical investigation of the total SOA of trench field-plate LDMOS devices. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 111–114. 10 indexed citations

10.

Kolahdouz, Mohammadreza, et al.. (2008). The influence of Si coverage in a chip on layer profile of selectively grown Si1−xGex layers using RPCVD technique. Thin Solid Films. 517(1). 257–258. 2 indexed citations

11.

González, Mireia Bargalló, Eddy Simoen, N. Naka, et al.. (2008). Stress analysis of Si1−xGex embedded source/drain junctions. Materials Science in Semiconductor Processing. 11(5-6). 285–290. 4 indexed citations

12.

Kolahdouz, Mohammadreza, et al.. (2008). Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors. Journal of Applied Physics. 103(5). 25 indexed citations

13.

Joshi, Shalik Ram, Yu‐Ting Huang, R. Wise, et al.. (2007). Junction Passivation for Direct Silicon Bond Hybrid Orientation Technology. IEEE Transactions on Electron Devices. 54(8). 2045–2050.

14.

Banerjee, Sanjay K., et al.. (2007). Theoretical and experimental investigation of valence band offsets for direct silicon bond hybrid orientation technology. Applied Physics Letters. 90(4). 6 indexed citations

15.

Ramin, M., et al.. (2007). CMOS Dual-Work-Function Engineering by Using Implanted Ni-FUSI. IEEE Electron Device Letters. 28(9). 831–833. 2 indexed citations

16.

Leitz, C. W., C.J. Vineis, John A. Carlin, et al.. (2006). Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates. Thin Solid Films. 513(1-2). 300–306. 5 indexed citations

17.

Weber, Eicke R. & R. Wise. (2006). Introductory Remarks: Strained Silicon. ECS Transactions. 2(2). 539–540. 1 indexed citations

18.

Xiong, Wenjing, C. Rinn Cleavelin, R. Wise, et al.. (2005). Full/partial depletion effects in FinFETs. 195–197. 3 indexed citations

19.

Kelly, D.Q., et al.. (2004). Enhanced hot-electron performance of strained Si NMOS over unstrained Si. 85. 455–462. 3 indexed citations

20.

Binns, M. J., et al.. (2001). The Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18μm Advanced CMOS Logic Process. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 82-84. 387–392. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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