R. Wise

1.3k citations

73 papers · 851 indexed · h-index 18

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon and Solar Cell Technologies
Structural Biology top 10%

Papers in ⓘ

Electrical and Electronic Engineering 69
- Semiconductor materials and devices 51
- Advancements in Semiconductor Devices and Circuit Design 50
- Silicon Carbide Semiconductor Technologies 20
- Silicon and Solar Cell Technologies 19
- Integrated Circuits and Semiconductor Failure Analysis 15
- Thin-Film Transistor Technologies 10
- Ferroelectric and Negative Capacitance Devices 6
Atomic and Molecular Physics, and Optics 11
- Semiconductor materials and interfaces 9

Co-authors: A. Gnudi (18 shared papers)Elena Gnani (18 shared papers)Susanna Reggiani (18 shared papers)G. Baccarani (17 shared papers)P.R. Chidambaram (2 shared papers)C. Machala (2 shared papers)S. Chakravarthi (1 shared paper)C. Bowen (1 shared paper)
Journals: IEEE Transactions on Electron Devices (9 papers)IEEE Electron Device Letters (6 papers)Journal of The Electrochemical Society (6 papers)Solid-State Electronics (4 papers)Thin Solid Films (3 papers)
Partner nations: United States Italy Sweden

In The Last Decade

R. Wise

70 papers receiving 826 citations

Peers

Countries citing papers authored by R. Wise

Since Specialization

Citations

This map shows the geographic impact of R. Wise's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Wise with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Wise more than expected).

Fields of papers citing papers by R. Wise

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Wise. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Wise. The network helps show where R. Wise may publish in the future.

Co-authors

The 25 scholars most cited alongside R. Wise, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. Wise Line = papers co-authored together R. Wise links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 73 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing IEEE Transactions on Electron Devices ·P.R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala, R. Wise	2006	141
2	TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors IEEE Transactions on Electron Devices ·Susanna Reggiani, Gaetano Barone, Stefano Poli, Elena Gnani, A. Gnudi, G. Baccarani, Ming-Yeh Chuang, Weidong Tian, R. Wise	2012	62
3	Improvement of FinFET Electrical Characteristics by Hydrogen Annealing IEEE Electron Device Letters ·Wei Xiong, G. Gebara, Jannat Ara Zaman, Michael L. Gostkowski, Nguyen Bao Tran, Greg Smith, David Lewis, C. Rinn Cleavelin, R. Wise, Shaofeng Yu, M. F. Pas, Tsu‐Jae King, J.-P. Colinge	2004	61
4	Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis IEEE Transactions on Electron Devices ·Susanna Reggiani, G. Baccarani, Elena Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise, S. Seetharaman	2009	39
5	Characterization and modeling of electrical stress degradation in STI-based integrated power devices Solid-State Electronics ·Susanna Reggiani, G. Barone, Elena Gnani, A. Gnudi, G. Baccarani, Stefano Poli, R. Wise, Ming-Yeh Chuang, Weidong Tian, S. Pendharkar, M. Denison	2014	35
6	Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors IEEE Transactions on Electron Devices ·Susanna Reggiani, Stefano Poli, M. Denison, Elena Gnani, A. Gnudi, G. Baccarani, S. Pendharkar, R. Wise	2011	32
7	The rise and rise of the B2B brand Journal of Business Strategy ·R. Wise, Jana Zednickova	2009	30
8	Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors Journal of Applied Physics ·Julius Hållstedt, Mohammadreza Kolahdouz, Reza Ghandi, Henry H. Radamson, R. Wise	2008	25
9	Probing nanoscale local lattice strains in advanced Si complementary metal-oxide-semiconductor devices Applied Physics Letters ·Jie‐rong Huang, M. J. Kim, P.R. Chidambaram, R. B. Irwin, Patrick J. Jones, J.W. Weijtmans, E.M. Koontz, Y. G. Wang, S. Tang, R. Wise	2006	22
10	Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using $\hbox{Sm}_{2}\hbox{O}_{3}/\hbox{SiO}_{2}$ Dielectric Stack IEEE Electron Device Letters ·Jianjun Yang, Jingde Chen, R. Wise, Philipp Steinmann, Mingbin Yu, Dim-Lee Kwong, Mingfu Li, Yee-Chia Yeo, Chunxiang Zhu	2009	21
11	High Performance Metal-Insulator-Metal Capacitors with Er2O3 on ALD SiO2 for RF Applications Journal of The Electrochemical Society ·Thanh Hoa Phung, Dharani Kumar Srinivasan, Philipp Steinmann, R. Wise, Mingbin Yu, Yee‐Chia Yeo, Chunxiang Zhu	2011	20
12	Physical and Electrical Characterization of Metal–Insulator–Metal Capacitors With $\hbox{Sm}_{2}\hbox{O}_{3}$ and $\hbox{Sm}_{2}\hbox{O}_{3}/\hbox{SiO}_{2}$ Laminated Dielectrics for Analog Circuit Applications IEEE Transactions on Electron Devices ·Jingde Chen, Jianjun Yang, R. Wise, Philipp Steinmann, Mingbin Yu, Chunxiang Zhu, Yee‐Chia Yeo	2009	19
13	Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna) ·S. Poli, Susanna Reggiani, G. Baccarani, Elena Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise, S. Seetharaman	2010	18
14	Full understanding of hot-carrier-induced degradation in STI-based LDMOS transistors in the impact-ionization operating regime Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna) ·S. Poli, Susanna Reggiani, G. Baccarani, Elena Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise	2011	18
15	Improved Hot-Electron Reliability in Strained-Si nMOS IEEE Transactions on Electron Devices ·David Onsongo, D.Q. Kelly, S. Dey, R. Wise, C. Rinn Cleavelin, Sanjay K. Banerjee	2004	18
16	Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers IEEE Transactions on Nanotechnology ·Mohammadreza Kolahdouz, Julius Hållstedt, Ali Khatibi, Mikael Östling, R. Wise, D. Jason Riley, Henry H. Radamson	2008	18
17	Analysis of HCS in STI-based LDMOS transistors Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna) ·Susanna Reggiani, Stefano Poli, Elena Gnani, A. Gnudi, G. Baccarani, M. Denison, S. Pendharkar, R. Wise, S. Seetharaman	2010	18
18	New method to calibrate the pattern dependency of selective epitaxy of SiGe layers Solid-State Electronics ·Mohammadreza Kolahdouz, Luca Maresca, Mikael Östling, D. Jason Riley, R. Wise, Henry H. Radamson	2009	17
19	Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors IEEE Electron Device Letters ·Stefano Poli, Susanna Reggiani, M. Denison, Elena Gnani, A. Gnudi, G. Baccarani, S. Pendharkar, R. Wise	2011	14
20	Modeling the Negative Quadratic VCC of $\hbox{SiO}_{2}$ in MIM Capacitor IEEE Electron Device Letters ·Thanh Hoa Phung, Philipp Steinmann, R. Wise, Yee‐Chia Yeo, Chunxiang Zhu	2011	14

About R. Wise

R. Wise is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Computational Mechanics, having authored 73 papers that have together received 851 indexed citations. Recurring topics across this work include Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (50 papers), Silicon Carbide Semiconductor Technologies (20 papers), Silicon and Solar Cell Technologies (19 papers), Integrated Circuits and Semiconductor Failure Analysis (15 papers), Thin-Film Transistor Technologies (10 papers), Semiconductor materials and interfaces (9 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (743 citations), Structural Biology (18 citations), Atomic and Molecular Physics, and Optics (107 citations), Materials Chemistry (142 citations) and Biomedical Engineering (94 citations). R. Wise has collaborated with scholars based in United States, Italy and Sweden. Frequent co-authors include A. Gnudi, Elena Gnani, Susanna Reggiani, G. Baccarani, P.R. Chidambaram, C. Machala, S. Chakravarthi, C. Bowen, S. Pendharkar and M. Denison. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Journal of The Electrochemical Society, Solid-State Electronics and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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