V. K. Yang

794 total citations
16 papers, 619 citations indexed

About

V. K. Yang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, V. K. Yang has authored 16 papers receiving a total of 619 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in V. K. Yang's work include Semiconductor Quantum Structures and Devices (9 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Semiconductor materials and devices (8 papers). V. K. Yang is often cited by papers focused on Semiconductor Quantum Structures and Devices (9 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Semiconductor materials and devices (8 papers). V. K. Yang collaborates with scholars based in United States and Germany. V. K. Yang's co-authors include Eugene A. Fitzgerald, M. Groenert, Arthur J. Pitera, M. T. Currie, C. W. Leitz, Harry Lee, Rajeev J. Ram, Mayank T. Bulsara, T. A. Langdo and G. Braithwaite and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

V. K. Yang

16 papers receiving 582 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V. K. Yang United States	10	573	343	152	121	32	16	619
M. Groenert United States	13	570 1.0×	430 1.3×	127 0.8×	129 1.1×	28 0.9×	19	607
Y. Kohama Japan	14	453 0.8×	338 1.0×	67 0.4×	98 0.8×	37 1.2×	29	513
David Kohen United States	13	479 0.8×	217 0.6×	128 0.8×	177 1.5×	34 1.1×	35	508
Songphol Kanjanachuchai Thailand	10	271 0.5×	306 0.9×	132 0.9×	175 1.4×	24 0.8×	72	408
Alexandra Abbadie France	13	612 1.1×	271 0.8×	180 1.2×	138 1.1×	9 0.3×	32	658
V. E. Haven United States	16	566 1.0×	443 1.3×	112 0.7×	91 0.8×	49 1.5×	43	648
M. Carroll United States	13	502 0.9×	265 0.8×	224 1.5×	96 0.8×	22 0.7×	28	550
M. O. Tanner United States	11	338 0.6×	215 0.6×	94 0.6×	99 0.8×	9 0.3×	19	388
P.K. Chiang United States	9	315 0.5×	293 0.9×	62 0.4×	69 0.6×	29 0.9×	17	356
Nguyen Hong Ky Switzerland	15	430 0.8×	289 0.8×	56 0.4×	79 0.7×	23 0.7×	33	494

Countries citing papers authored by V. K. Yang

Since Specialization

Citations

This map shows the geographic impact of V. K. Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. K. Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. K. Yang more than expected).

Fields of papers citing papers by V. K. Yang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. K. Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. K. Yang. The network helps show where V. K. Yang may publish in the future.

Co-authorship network of co-authors of V. K. Yang

This figure shows the co-authorship network connecting the top 25 collaborators of V. K. Yang. A scholar is included among the top collaborators of V. K. Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. K. Yang. V. K. Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Leitz, C. W., C.J. Vineis, John A. Carlin, et al.. (2006). Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates. Thin Solid Films. 513(1-2). 300–306. 5 indexed citations

Fiorenza, J.G., G. Braithwaite, C. W. Leitz, et al.. (2004). Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs. 493–497. 5 indexed citations

Yang, V. K., M. Carroll, T. A. Langdo, et al.. (2004). A high throughput, ultra-low roughness, SiGe-free strained Si regrowth process. Materials Science in Semiconductor Processing. 8(1-3). 187–192. 9 indexed citations

Yang, V. K., S. M. Ting, M. Groenert, et al.. (2003). Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate. Journal of Applied Physics. 93(9). 5095–5102. 13 indexed citations

Langdo, T. A., M. Erdtmann, C. W. Leitz, et al.. (2003). Advanced SiGe-free Strained Si on Insulator Substrates: Thermal Stability and Carrier Mobility Enhancement. 2 indexed citations

Fitzgerald, Eugene A., Arthur J. Pitera, Minjoo Larry Lee, et al.. (2003). The science and applications of relaxed semiconductor alloys on conventional substrates. 1. 587–592. 2 indexed citations

Yang, V. K., M. Groenert, C. W. Leitz, et al.. (2003). Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates. Journal of Applied Physics. 93(7). 3859–3865. 116 indexed citations

Fiorenza, J.G., G. Braithwaite, C. W. Leitz, et al.. (2003). Film thickness constraints for manufacturable strained silicon CMOS. Semiconductor Science and Technology. 19(1). L4–L8. 68 indexed citations

Langdo, T. A., M. T. Currie, Anthony Lochtefeld, et al.. (2003). SiGe-free strained Si on insulator by wafer bonding and layer transfer. Applied Physics Letters. 82(24). 4256–4258. 71 indexed citations

10.

Groenert, M., Arthur J. Pitera, V. K. Yang, et al.. (2002). Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers. Journal of Applied Physics. 93(1). 362–367. 199 indexed citations

11.

Yang, V. K., M. Groenert, Gianni Taraschi, et al.. (2002). Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates. Journal of Materials Science Materials in Electronics. 13(7). 377–380. 22 indexed citations

12.

Guha, S., Robert C. Keller, V. K. Yang, F. Shahedipour, & B. W. Wessels. (2001). Comparative optical studies of p-type and unintentionally doped GaN: The influence of annealing. Applied Physics Letters. 78(1). 58–60. 10 indexed citations

13.

Fitzgerald, Eugene A., M. T. Currie, Srikanth Samavedam, et al.. (1999). Dislocations in Relaxed SiGe/Si Heterostructures. physica status solidi (a). 171(1). 227–238. 4 indexed citations

14.

Ting, S. M., Mayank T. Bulsara, V. K. Yang, et al.. (1999). Monolithic integration of III-V materials and devices on silicon. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3630. 19–19. 8 indexed citations

15.

Fitzgerald, Eugene A., M. T. Currie, Srikanth Samavedam, et al.. (1999). Dislocations in Relaxed SiGe/Si Heterostructures. physica status solidi (a). 171(1). 227–238. 58 indexed citations

16.

Bulsara, Mayank T., et al.. (1998). Graded InxGa1−xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy. Journal of Applied Physics. 83(1). 592–599. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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