L. K. Bera

2.5k total citations · 1 hit paper
104 papers, 2.0k citations indexed

About

L. K. Bera is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L. K. Bera has authored 104 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 99 papers in Electrical and Electronic Engineering, 39 papers in Atomic and Molecular Physics, and Optics and 24 papers in Materials Chemistry. Recurrent topics in L. K. Bera's work include Semiconductor materials and devices (86 papers), Advancements in Semiconductor Devices and Circuit Design (45 papers) and Semiconductor materials and interfaces (35 papers). L. K. Bera is often cited by papers focused on Semiconductor materials and devices (86 papers), Advancements in Semiconductor Devices and Circuit Design (45 papers) and Semiconductor materials and interfaces (35 papers). L. K. Bera collaborates with scholars based in Singapore, India and United States. L. K. Bera's co-authors include C. K. Maiti, N. Balasubramanian, G. Q. Lo, S.C. Rustagi, Navab Singh, C. H. Tung, Ajay Agarwal, Sanatan Chattopadhyay, Rakesh Kumar and Rui Yang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

L. K. Bera

102 papers receiving 1.9k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

2006 506 citations Navab Singh, Ajay Agarwal et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. K. Bera Singapore	20	1.8k	650	470	448	178	104	2.0k
Kwang Hong Lee Singapore	24	1.4k 0.7×	493 0.8×	309 0.7×	610 1.4×	139 0.8×	101	1.6k
J. Fraser Canada	16	593 0.3×	423 0.7×	593 1.3×	303 0.7×	197 1.1×	44	939
Kazuyoshi Torii Japan	26	2.0k 1.1×	310 0.5×	962 2.0×	243 0.5×	60 0.3×	144	2.3k
J. Brini France	22	2.4k 1.3×	280 0.4×	409 0.9×	242 0.5×	123 0.7×	90	2.5k
Brenda L. VanMil United States	18	915 0.5×	238 0.4×	834 1.8×	358 0.8×	119 0.7×	62	1.4k
M. Doczy United States	16	2.1k 1.1×	672 1.0×	477 1.0×	404 0.9×	58 0.3×	22	2.3k
Shinji Migita Japan	24	2.4k 1.3×	233 0.4×	1.2k 2.6×	232 0.5×	79 0.4×	197	2.6k
Johannes Svensson Sweden	23	1.3k 0.7×	872 1.3×	538 1.1×	409 0.9×	50 0.3×	72	1.7k
V. Grivickas Lithuania	18	950 0.5×	324 0.5×	711 1.5×	303 0.7×	50 0.3×	88	1.3k
K. Cherkaoui Ireland	24	1.7k 0.9×	185 0.3×	597 1.3×	571 1.3×	54 0.3×	128	1.8k

Countries citing papers authored by L. K. Bera

Since Specialization

Citations

This map shows the geographic impact of L. K. Bera's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. K. Bera with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. K. Bera more than expected).

Fields of papers citing papers by L. K. Bera

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. K. Bera. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. K. Bera. The network helps show where L. K. Bera may publish in the future.

Co-authorship network of co-authors of L. K. Bera

This figure shows the co-authorship network connecting the top 25 collaborators of L. K. Bera. A scholar is included among the top collaborators of L. K. Bera based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. K. Bera. L. K. Bera is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chand, Umesh, L. K. Bera, Navab Singh, et al.. (2024). High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (t<sub>tddb</sub>≥ 10<sup>4</sup>s), and High Thermal Stability (≥ 800 °C). Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 359. 217–221. 1 indexed citations

Bera, L. K., et al.. (2024). The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 359. 59–63.

Bhat, Thirumaleshwara N., Surani Bin Dolmanan, Y. Dikme, et al.. (2014). Structural and optical properties of AlxGa1−xN/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(2). 12 indexed citations

Samanta, S.K., L. K. Bera, & Somenath Chatterjee. (2007). Silicon Heteroepitaxial Layer Characterization by Atomic Force Microscopy. IETE Journal of Research. 53(3). 185–197. 2 indexed citations

Ranjan, Rakesh, K. L. Pey, Ching‐Hsuan Tung, et al.. (2006). Ultrafast progressive breakdown associated with metal-like filament formation of a breakdown path in a HfO2∕TaN∕TiN transistor. Applied Physics Letters. 88(12). 11 indexed citations

Bera, L. K., Hai Son Nguyen, Navaneet Kumar Singh, et al.. (2006). Three Dimensionally Stacked SiGe Nanowire Array and Gate-All-Around p-MOSFETs. 1–4. 36 indexed citations

Singh, Navab, Weiwei Fang, S.C. Rustagi, et al.. (2006). Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance. National University of Singapore. 1–4. 125 indexed citations

Singh, Navab, L. K. Bera, Weiwei Fang, et al.. (2005). Fully-depleted ultra narrow (-10 nm) body Gate-All-Around CMOS transistors. 1 indexed citations

Bliznetsov, Vladimir, R. Rakesh Kumar, L. K. Bera, et al.. (2005). Overcoming Challenges in Metal Gate Etching for Sub-45 nm Technology Node. 1 indexed citations

10.

Zhang, Qingchun, Nan Wu, Chunxiang Zhu, et al.. (2004). Germanium pMOSFET with HfON gate dielectric. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 256–257. 1 indexed citations

11.

Gupta, Rohit, Won Jong Yoo, Yingqian Wang, et al.. (2004). Formation of SiGe nanocrystals in HfO2 using in situ chemical vapor deposition for memory applications. Applied Physics Letters. 84(21). 4331–4333. 21 indexed citations

12.

Bai, Weiping, H.C. Wen, S. Mathew, et al.. (2004). Laminated metal gate electrode with tunable work function for advanced CMOS. 188–189. 13 indexed citations

13.

Bera, L. K., et al.. (2004). Sub-100 nm MOSFET fabrication with low temperature resist trimming process. Thin Solid Films. 462-463. 63–66. 5 indexed citations

14.

Yeo, Chia Ching, Byung Jin Cho, Moon Sig Joo, et al.. (2003). Improvement of Electrical Properties of MOCVD HfO[sub 2] by Multistep Deposition. Electrochemical and Solid-State Letters. 6(11). F42–F42. 6 indexed citations

15.

Joo, Moon Sig, Byung Jin Cho, Chia Ching Yeo, et al.. (2003). Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process. IEEE Transactions on Electron Devices. 50(10). 2088–2094. 51 indexed citations

16.

Samanta, S.K., et al.. (2002). Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si_1 xGe_x. Semiconductor Science and Technology. 17(2). 141–144. 1 indexed citations

17.

Teh, Lay Kuan, W. K. Choi, L. K. Bera, & W. K. Chim. (2001). Structural characterisation of polycrystalline SiGe thin film. Solid-State Electronics. 45(11). 1963–1966. 19 indexed citations

18.

Bera, L. K., et al.. (2001). Determination of density and distribution of high-voltage stress-induced traps in O2-, NO- and NO/O2/NO-plasma grown oxides on strained Si. Solid-State Electronics. 45(3). 379–383. 1 indexed citations

19.

Chattopadhyay, Sanatan, L. K. Bera, S. K. Ray, P. K. Bose, & C. K. Maiti. (1998). Extraction of interface state density of Pt/p-strained-Si Schottky diode. Thin Solid Films. 335(1-2). 142–145. 30 indexed citations

20.

Maiti, C. K., L. K. Bera, Sayan Dey, Deepak Kumar Nayak, & N.B. Chakrabarti. (1997). Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field. Solid-State Electronics. 41(12). 1863–1869. 43 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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