J.G. Fiorenza

670 citations

36 papers · 531 indexed · h-index 14

Co-authors: Anthony Lochtefeld Jesús A. del Alamo M. Carroll Ji‐Soo Park Jie Bai D.A. Antoniadis G. Braithwaite C. W. Leitz
Topics: Semiconductor materials and devices (25 papers)Advancements in Semiconductor Devices and Circuit Design (22 papers)Silicon Carbide Semiconductor Technologies (12 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Biomedical Engineering
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: United States Singapore Germany

In The Last Decade

J.G. Fiorenza

35 papers receiving 488 citations

Peers

Countries citing papers authored by J.G. Fiorenza

Since Specialization

Citations

This map shows the geographic impact of J.G. Fiorenza's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.G. Fiorenza with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.G. Fiorenza more than expected).

Fields of papers citing papers by J.G. Fiorenza

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.G. Fiorenza. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.G. Fiorenza. The network helps show where J.G. Fiorenza may publish in the future.

Co-authorship network of co-authors of J.G. Fiorenza

This figure shows the co-authorship network connecting the top 25 collaborators of J.G. Fiorenza. A scholar is included among the top collaborators of J.G. Fiorenza based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.G. Fiorenza. J.G. Fiorenza is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Monolithic integration of AlGaAs distributed Bragg reflectors on virtual Ge substrates via aspect ratio trapping 2017 ·Optical Materials Express ·Yiheng Lin,Wei Shi,Jizhong Li,Ting‐Chang Chang,Ji‐Soo Park,(unknown),(unknown),Mark Greenberg,J.G. Fiorenza,Lukas Chrostowski,Guangrui Xia	4
2	(Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS 2010 ·ECS Transactions ·J.G. Fiorenza,Ji‐Soo Park,(unknown),(unknown),Jizhong Li,(unknown),M. Carroll,Anthony Lochtefeld	58
3	A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques 2009 ·Journal of Applied Physics ·P. Zaumseil,Thomas Schroeder,Ji‐Soo Park,J.G. Fiorenza,Anthony Lochtefeld	16
4	Fabrication of Low-Defectivity, Compressively Strained Ge on Si[sub 0.2]Ge[sub 0.8] Structures Using Aspect Ratio Trapping 2009 ·Journal of The Electrochemical Society ·Ji‐Sang Park,M. Curtin,(unknown),Jie Bai,Malcolm S. Carroll,J.G. Fiorenza,Anthony Lochtefeld	5
5	Sub-micron Esaki Tunnel Diode fabrication and characterization 2009 ·(unknown),Brian Romanczyk,Eugene Freeman,Paul M. Thomas,Michael Barth,S.L. Rommel,Zhiyuan Cheng,(unknown),(unknown),(unknown),J.G. Fiorenza,Anthony Lochtefeld	2
6	Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping 2009 ·Journal of The Electrochemical Society ·(unknown),(unknown),(unknown),(unknown),Jie Bai,Zhiyuan Cheng,M. Carroll,J.G. Fiorenza,Anthony Lochtefeld,W.K. Chan,Zane A. Shellenbarger	15
7	Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping 2009 ·ECS Transactions ·Jizhong Li,Jie Bai,(unknown),J.G. Fiorenza,(unknown),M. Carroll,Zane A. Shellenbarger,Anthony Lochtefeld	23
8	Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique 2008 ·Applied Physics Letters ·Yanqing Wu,Min Xu,(unknown),Zhiyuan Cheng,(unknown),(unknown),(unknown),Jie Bai,M. Carroll,J.G. Fiorenza,Anthony Lochtefeld	37
9	Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping 2008 ·S.L. Rommel,(unknown),Paul M. Thomas,Michael Barth,Kelsey E. Johnson,Santosh Kurinec,Alan Seabaugh,Zhiyuan Cheng,(unknown),(unknown),(unknown),Jie Bai,M. Carroll,J.G. Fiorenza,Anthony Lochtefeld	14
10	Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping 2008 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·(unknown),M. Curtin,(unknown),M. Carroll,J.G. Fiorenza,Anthony Lochtefeld,S. Novak	5
11	Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates 2006 ·Thin Solid Films ·C. W. Leitz,C.J. Vineis,John A. Carlin,J.G. Fiorenza,G. Braithwaite,R. Westhoff,V. K. Yang,M. Carroll,T. A. Langdo,K. Matthews,Puneet Kohli,M. Rödder,R. Wise,Anthony Lochtefeld	5
12	Impact of substrate-surface potential on the performance of RF power LDMOSFETs on high-resistivity SOI 2006 ·IEEE Transactions on Electron Devices ·Jörg Scholvin,J.G. Fiorenza,Jesús A. del Alamo	3
13	DC and RF characterization of fully depleted strained SOI MOSFETs 2005 ·(unknown),T. A. Langdo,(unknown),J.G. Fiorenza,P.W. Wyatt,M. T. Currie,C. W. Leitz,G. Braithwaite,M. Fritze,(unknown),D. Yost,Zhiyuan Cheng,Anthony Lochtefeld,(unknown)	2
14	RF power performance of an LDMOSFET on high-resistivity SOI 2004 ·IEEE Electron Device Letters ·J.G. Fiorenza,Jesús A. del Alamo	4
15	Fully Depleted n-MOSFETs on Supercritical Thickness Strained SOI 2004 ·IEEE Electron Device Letters ·Isaac Lauer,T. A. Langdo,Zhiyuan Cheng,J.G. Fiorenza,G. Braithwaite,M. T. Currie,C. W. Leitz,Anthony Lochtefeld,(unknown),Mayank T. Bulsara,Mark Somerville,D.A. Antoniadis	36
16	Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs 2004 ·J.G. Fiorenza,G. Braithwaite,C. W. Leitz,M. T. Currie,Zhiyuan Cheng,V. K. Yang,T. A. Langdo,John A. Carlin,Mark Somerville,Anthony Lochtefeld,(unknown),Mayank T. Bulsara	5
17	Technologies for RF power LDMOSFETs beyond 2 GHz: metal/poly-Si damascene gates and low-loss substrates 2003 ·J.G. Fiorenza,Jörg Scholvin,Jesús A. del Alamo	6
18	A metal/polysilicon damascene gate technology for RF power LDMOSFETs 2003 ·IEEE Electron Device Letters ·J.G. Fiorenza,Jörg Scholvin,Jesús A. del Alamo	4
19	Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon 2002 ·IEEE Transactions on Electron Devices ·J.G. Fiorenza,Jesús A. del Alamo	38
20	Reaction to President Bush's decision on embryonic stem-cell research. 2001 ·PubMed ·J.G. Fiorenza,(unknown),(unknown),(unknown),Brandon M. Law,(unknown),Harry W. Flynn,(unknown),(unknown),(unknown),(unknown),(unknown),Maurice Place	1

About J.G. Fiorenza

J.G. Fiorenza is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture, having authored 36 papers that have together received 531 indexed citations. Recurring topics across this work include Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Silicon Carbide Semiconductor Technologies (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (512 citations), Atomic and Molecular Physics, and Optics (162 citations) and Biomedical Engineering (144 citations). J.G. Fiorenza has collaborated with scholars based in United States, Singapore and Germany. Frequent co-authors include Anthony Lochtefeld, Jesús A. del Alamo, M. Carroll, Ji‐Soo Park, Jie Bai, D.A. Antoniadis, G. Braithwaite, C. W. Leitz, T. A. Langdo and Mark Somerville. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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