D.L. Huffaker

478 citations

18 papers · 385 indexed · h-index 9

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 14
Electrical and Electronic Engineering top 10%
- Semiconductor Lasers and Optical Devices 12
- Photonic and Optical Devices 7
- Advanced Semiconductor Detectors and Materials 5
- Molecular Junctions and Nanostructures 3
Materials Chemistry
- Quantum Dots Synthesis And Properties 3
Instrumentation
Biomedical Engineering
Spectroscopy
- Spectroscopy and Laser Applications 1
Statistical and Nonlinear Physics
- Advanced Thermodynamics and Statistical Mechanics 1

Co-authors: Arezou Khoshakhlagh L. F. Lester Ramesh B. Laghumavarapu A. Moscho Mohamed A. El-Emawy Zetian Mi Jianfeng Yang P. Bhattacharya
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Journals: Electronics Letters (4 papers)IEEE Photonics Technology Letters (3 papers)Applied Physics Letters (3 papers)
Partner nations: United States United Kingdom Taiwan

In The Last Decade

D.L. Huffaker

16 papers receiving 368 citations

Peers

Countries citing papers authored by D.L. Huffaker

Since Specialization

Citations

This map shows the geographic impact of D.L. Huffaker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.L. Huffaker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.L. Huffaker more than expected).

Fields of papers citing papers by D.L. Huffaker

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.L. Huffaker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.L. Huffaker. The network helps show where D.L. Huffaker may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D.L. Huffaker, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D.L. Huffaker Line = papers co-authored together D.L. Huffaker links everyone, so they are left out of the graph.

All Works

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18 of 18 papers shown

#	Work
1	Optimization of surface passivation for suppressing leakage current in GaSb PIN devices Electronics Letters ·Yong‐Sok Ji,Khalifa M. Azizur-Rahman,圭太郎中川原,Athari SS,David Prout,Baolai Liang,D.L. Huffaker,Karl‐L. Täschner	2020	0
2	GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface Infrared Physics & Technology ·Andrew Marshall,Adam P. Craig,Charles J. Reyner,D.L. Huffaker	2014	4
3	Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays Applied Physics Letters ·Adam P. Craig,Charles J. Reyner,Andrew Marshall,D.L. Huffaker	2014	8
4	Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate Journal of Renewable and Sustainable Energy ·J.M. Borrego,H Heinrich,Paul Greiff,D.L. Huffaker,Ramesh B. Laghumavarapu,Julia Kim,P.S. Dutta	2013	5
5	Strong interband transitions in InAs quantum dots solar cell Applied Physics Letters ·Jiang Wu,Yahia F. Makableh,Yang Qi-xian,M. O. Manasreh,Baolai Liang,Charles J. Reyner,D.L. Huffaker	2012	42
6	Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique IEEE Photonics Technology Letters ·Kalyan Nunna,Norma A. Foster,Charles J. Reyner,Andrew Marshall,Baolai Liang,A. Jallipalli,J.P.R. David,D.L. Huffaker	2011	27
7	Room temperature InGaSb quantum well microcylinder lasers at 2μm grown monolithically on a silicon substrate Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Tian Yang,Ling Lü,Min‐Hsiung Shih,John O’Brien,Ganesh Balakrishnan,D.L. Huffaker	2007	8
8	Ga Sb ∕ Ga As type II quantum dot solar cells for enhanced infrared spectral response Applied Physics Letters ·Ramesh B. Laghumavarapu,A. Moscho,Arezou Khoshakhlagh,Mohamed A. El-Emawy,L. F. Lester,D.L. Huffaker	2007	171
9	Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon Electronics Letters ·Zetian Mi,Jianfeng Yang,P. Bhattacharya,D.L. Huffaker	2006	61
10	High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Ganesh Balakrishnan,S. Huang,Arezou Khoshakhlagh,L. R. Dawson,M. Becht,Patrick Conlin,D.L. Huffaker	2005	13
11	Electroluminescence and materials characterization of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition D.L. Huffaker,Athanasios Mpouras,James E. Maddux,P. S. Wong,Houqiang Xu,N. R. Kalvathi,Linda March	2003	2
12	High performance 1.3 μm vertical-cavity surface-emitting lasers with oxygen-implanted confinement regions and wafer-bonded mirrors Yi Qian,Z.H. Zhu,Yu‐Hwa Lo,D.L. Huffaker,D.G. Deppe,Hong‐Wei Hou,B. E. Hammons,Joe Baglieri,Yi Yu	2002	0
13	Oxide-confined VCSELs with quantum well and quantum dot active regions D.G. Deppe,D.L. Huffaker,Qiwen Deng,Dezangela Aguiar Moreira,Lancelot Graham	2002	1
14	InGaAs/GaAs QDs for extended wavelength GaAs-based edge-emitters and VCSELs D.L. Huffaker,O.B. Shchekin,Fengtian Zhu,Wei YuHuan,S.M. Csutak,D. G. Deppe	1999	1
15	Mode coupling in a narrow spectral bandwidth quantum-dot microcavity photodetector IEEE Photonics Technology Letters ·D.G. Deppe,Kumala Afiyani Rizqi,D.L. Huffaker,H. Deng,Qiwen Deng,Joe C. Campbell	1998	3
16	Submilliamp 1.3 µm vertical-cavity surface-emittinglasers with threshold current density of < 500 A/cm ² Electronics Letters ·Yi Qian,Z.H. Zhu,Yu‐Hwa Lo,D.L. Huffaker,D. G. Deppe,H.Q. Hou,B. E. Hammons,Wei Lin,Г.Р. Фаткуллина	1997	21
17	Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors IEEE Photonics Technology Letters ·Yi Qian,Z.H. Zhu,Yu‐Hwa Lo,D.L. Huffaker,D. G. Deppe,H.Q. Hou,B. E. Hammons,Wei Lin,Г.Р. Фаткуллина	1997	12
18	Gain switching in a vertical-cavity laser withhigh-contrast mirrors Electronics Letters ·H. Deng,D.L. Huffaker,林信志,D.G. Deppe	1995	6

About D.L. Huffaker

D.L. Huffaker is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Statistical and Nonlinear Physics, Materials Chemistry and Spectroscopy, having authored 18 papers that have together received 385 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (14 papers), Semiconductor Lasers and Optical Devices (12 papers), Photonic and Optical Devices (7 papers), Advanced Semiconductor Detectors and Materials (5 papers), Quantum Dots Synthesis And Properties (3 papers), Molecular Junctions and Nanostructures (3 papers), Spectroscopy and Laser Applications (1 paper) and Advanced Thermodynamics and Statistical Mechanics (1 paper). The work is most often cited by research in Atomic and Molecular Physics, and Optics (317 citations), Electrical and Electronic Engineering (331 citations), Materials Chemistry (160 citations), Instrumentation (7 citations) and Biomedical Engineering (62 citations). D.L. Huffaker has collaborated with scholars based in United States, United Kingdom and Taiwan. Frequent co-authors include Arezou Khoshakhlagh, L. F. Lester, Ramesh B. Laghumavarapu, A. Moscho, Mohamed A. El-Emawy, Zetian Mi, Jianfeng Yang, P. Bhattacharya, Charles J. Reyner and Baolai Liang. Their work appears in journals such as Electronics Letters, IEEE Photonics Technology Letters, Applied Physics Letters, Journal of Renewable and Sustainable Energy and Infrared Physics & Technology.

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