Ming-Ren Lin

1.4k total citations · 1 hit paper
33 papers, 1.1k citations indexed

About

Ming-Ren Lin is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Ming-Ren Lin has authored 33 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 4 papers in Biomedical Engineering and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Ming-Ren Lin's work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). Ming-Ren Lin is often cited by papers focused on Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). Ming-Ren Lin collaborates with scholars based in United States, Canada and Italy. Ming-Ren Lin's co-authors include Qian Xiang, Bin Yu, Haihong Wang, An Chen, Safayet Ahmed, Leland Chang, Cyrus Tabery, David F. Kyser, Tsu-Jae King and Jeffrey Bokor and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

Ming-Ren Lin

32 papers receiving 997 citations

Hit Papers

FinFET scaling to 10 nm gate length 2003 2026 2010 2018 2003 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. FinFET scaling to 10 nm gate length
    2003 462 citations Bin Yu, Leland Chang et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ming-Ren Lin United States 13 1.0k 129 101 96 41 33 1.1k
Wen‐Kuan Yeh Taiwan 17 1.1k 1.1× 125 1.0× 56 0.6× 238 2.5× 32 0.8× 93 1.2k
Gino Giusi Italy 18 956 0.9× 297 2.3× 106 1.0× 66 0.7× 18 0.4× 90 1.0k
B. Prévitali France 18 1.4k 1.3× 320 2.5× 175 1.7× 148 1.5× 12 0.3× 81 1.4k
K. Ishimaru Japan 16 584 0.6× 99 0.8× 68 0.7× 46 0.5× 7 0.2× 63 703
H.-J. Wann United States 10 863 0.8× 93 0.7× 105 1.0× 89 0.9× 9 0.2× 18 885
Dimitri Linten Belgium 20 1.4k 1.3× 84 0.7× 68 0.7× 88 0.9× 37 0.9× 154 1.4k
Masumi Saitoh Japan 19 1.1k 1.1× 142 1.1× 304 3.0× 324 3.4× 41 1.0× 107 1.2k
T.Y. Chan United States 16 1.7k 1.6× 115 0.9× 108 1.1× 93 1.0× 9 0.2× 37 1.7k
Shubham Sahay India 20 1.2k 1.2× 342 2.7× 35 0.3× 61 0.6× 44 1.1× 59 1.3k
Ali Razavieh United States 10 741 0.7× 127 1.0× 42 0.4× 348 3.6× 90 2.2× 14 824

Countries citing papers authored by Ming-Ren Lin

Since Specialization
Citations

This map shows the geographic impact of Ming-Ren Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ming-Ren Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ming-Ren Lin more than expected).

Fields of papers citing papers by Ming-Ren Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ming-Ren Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ming-Ren Lin. The network helps show where Ming-Ren Lin may publish in the future.

Co-authorship network of co-authors of Ming-Ren Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Ming-Ren Lin. A scholar is included among the top collaborators of Ming-Ren Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ming-Ren Lin. Ming-Ren Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, I‐Jung, Lijie Zhang, Chia‐Ching Liaw, et al.. (2012). Investigation of Two Species of Huang-qi (Aatragalusmembranaceus and Hedysarum polybotrys) by HPLC, ITS,Microscopic Morphology and Antioxidant Activities. Journal of Food and Drug Analysis. 20(3). 603–610. 1 indexed citations
2.
Chen, An, Zoran Krivokapić, & Ming-Ren Lin. (2012). A comprehensive model for crossbar memory arrays. 219–220. 6 indexed citations
3.
Chen, An, Ming-Ren Lin, David G. Seiler, et al.. (2011). Electrical Characterization of Resistive Switching Memories. AIP conference proceedings. 2 indexed citations
4.
Chen, An & Ming-Ren Lin. (2011). Variability of resistive switching memories and its impact on crossbar array performance. MY.7.1–MY.7.4. 109 indexed citations
5.
Cho, Hyun‐Jin & Ming-Ren Lin. (2009). Novel DRAM cell with amplified capacitor for embedded application. 1–4. 2 indexed citations
6.
7.
Xiang, Qian, Jung-Suk Goo, Bin Yu, et al.. (2004). Strained silicon NMOS with nickel-silicide metal gate. 101–102. 29 indexed citations
8.
Krivokapić, Zoran, et al.. (2004). Gate Stress Induced Performance Enhancements. 1 indexed citations
9.
Yu, Bin, Leland Chang, Safayet Ahmed, et al.. (2003). FinFET scaling to 10 nm gate length. 251–254. 462 indexed citations breakdown →
10.
Besser, Paul R., et al.. (2003). A low-temperature metal-doping technique for engineering the gate electrode of replacement metal gate CMOS transistors. IEEE Electron Device Letters. 24(9). 547–549. 7 indexed citations
11.
Yu, Bin, Haihong Wang, Qian Xiang, et al.. (2003). 50 nm gate-length CMOS transistor with super-halo: design, process, and reliability. 653–656. 28 indexed citations
12.
Besser, Paul R., et al.. (2003). Self-aligned nickel, cobalt/tantalum nitride stacked-gate pMOSFETs fabricated with a low temperature process after metal electrode deposition. IEEE Transactions on Electron Devices. 50(12). 2456–2460. 4 indexed citations
13.
Goo, Jung-Suk, Qian Xiang, Yuzuru Takamura, et al.. (2003). Scalability of strained-Si nMOSFETs down to 25 nm gate length. IEEE Electron Device Letters. 24(5). 351–353. 44 indexed citations
14.
Goo, Jung-Suk, et al.. (2003). Band offset induced threshold variation in strained-Si nMOSFETs. IEEE Electron Device Letters. 24(9). 568–570. 40 indexed citations
15.
Yu, Bin, Yun Wang, Haihong Wang, et al.. (2003). 70 nm MOSFET with ultra-shallow, abrupt, and super-doped S/D extension implemented by laser thermal process (LTP). 509–512. 28 indexed citations
16.
Xiang, Qian, et al.. (2002). Deep sub-100 nm CMOS with ultra low gate sheet resistance by NiSi. 76–77. 6 indexed citations
17.
18.
Yu, Bin, et al.. (2002). Limits of gate-oxide scaling in nano-transistors. 90–91. 51 indexed citations
19.
Lucovsky, G., et al.. (2000). Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides. Microelectronics Reliability. 40(12). 1987–1995. 1 indexed citations
20.
Krishnan, Srinath, Geoffrey Yeap, Bin Yu, Qian Xiang, & Ming-Ren Lin. (1998). High-k scaling for gate insulators: an insightful study. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3506. 65–65. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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