C. Gaire

721 total citations
24 papers, 573 citations indexed

About

C. Gaire is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, C. Gaire has authored 24 papers receiving a total of 573 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 8 papers in Surfaces, Coatings and Films. Recurrent topics in C. Gaire's work include Semiconductor materials and devices (7 papers), Optical Coatings and Gratings (7 papers) and Advancements in Semiconductor Devices and Circuit Design (4 papers). C. Gaire is often cited by papers focused on Semiconductor materials and devices (7 papers), Optical Coatings and Gratings (7 papers) and Advancements in Semiconductor Devices and Circuit Design (4 papers). C. Gaire collaborates with scholars based in United States. C. Gaire's co-authors include Nikhil Koratkar, Pulickel M. Ajayan, Toh‐Ming Lu, Li Song, Theodorian Borca‐Tasciuc, Fazel Yavari, G.-C. Wang, Tansel Karabacak, Fu Tang and Matthew Pelliccione and has published in prestigious journals such as Physical Review B, Small and Surface Science.

In The Last Decade

C. Gaire

21 papers receiving 564 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Gaire United States	11	353	265	182	117	85	24	573
R. Tomašiūnas Lithuania	13	453 1.3×	337 1.3×	212 1.2×	188 1.6×	45 0.5×	73	668
Gisia Beydaghyan Canada	11	194 0.5×	238 0.9×	158 0.9×	178 1.5×	279 3.3×	30	578
C. Robert‐Goumet France	14	241 0.7×	428 1.6×	230 1.3×	245 2.1×	69 0.8×	54	631
Łukasz Borowik France	11	211 0.6×	244 0.9×	150 0.8×	165 1.4×	44 0.5×	33	487
Akira Izumi Japan	18	432 1.2×	630 2.4×	73 0.4×	89 0.8×	47 0.6×	70	774
Oleksandr Romanyuk Czechia	17	374 1.1×	411 1.6×	167 0.9×	268 2.3×	123 1.4×	68	818
Osamu Tsuji Japan	11	341 1.0×	251 0.9×	95 0.5×	67 0.6×	51 0.6×	59	499
I. I. Pronin Russia	13	336 1.0×	221 0.8×	118 0.6×	349 3.0×	84 1.0×	77	636
M.N. Séméria France	17	413 1.2×	713 2.7×	165 0.9×	188 1.6×	23 0.3×	38	853
Koichi Sudoh Japan	14	189 0.5×	382 1.4×	220 1.2×	242 2.1×	54 0.6×	67	658

Countries citing papers authored by C. Gaire

Since Specialization

Citations

This map shows the geographic impact of C. Gaire's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Gaire with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Gaire more than expected).

Fields of papers citing papers by C. Gaire

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Gaire. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Gaire. The network helps show where C. Gaire may publish in the future.

Co-authorship network of co-authors of C. Gaire

This figure shows the co-authorship network connecting the top 25 collaborators of C. Gaire. A scholar is included among the top collaborators of C. Gaire based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Gaire. C. Gaire is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Peng, Hongying, et al.. (2020). Advanced Process Control (APC) for Selective EPI process in 300mm Fab. 1–4.

Lee, Jusang, et al.. (2019). Full structure transistor process monitoring of boron and germanium in PFET EPI using in-line XPS. 45. 21–21. 1 indexed citations

Bazizi, El Mehdi, Pei Zhao, C. Gaire, et al.. (2018). Performance boost using spacer-confined cavity for advanced FinFET technology. Semiconductor Science and Technology. 34(1). 15012–15012. 1 indexed citations

Ma, Wei, El Mehdi Bazizi, C. Gaire, et al.. (2018). A Novel Approach to Control Source/Drain Cavity Profile for Device Performance Improvement. IEEE Transactions on Electron Devices. 65(9). 3640–3645. 3 indexed citations

Qi, Yi, et al.. (2016). In-Situ Boron Doped SiGe Epitaxy Optimization for FinFET Source/Drain. ECS Meeting Abstracts. MA2016-02(30). 1992–1992.

Qi, Yi, et al.. (2016). In-Situ Boron Doped SiGe Epitaxy Optimization for FinFET Source/Drain. ECS Transactions. 75(8). 265–272. 8 indexed citations

Gaire, C., et al.. (2012). Low temperature epitaxial growth of Ge on CaF2 buffered cube-textured Ni. Journal of Crystal Growth. 343(1). 33–37. 6 indexed citations

Gaire, C., et al.. (2011). Temperature dependent biaxial texture evolution in Ge films under oblique angle vapor deposition. Thin Solid Films. 519(16). 5413–5418. 6 indexed citations

Gaire, C., et al.. (2011). Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition. Thin Solid Films. 520(6). 1862–1865. 17 indexed citations

10.

Yavari, Fazel, C. Gaire, Li Song, et al.. (2010). Tunable Bandgap in Graphene by the Controlled Adsorption of Water Molecules. Small. 6(22). 2535–2538. 260 indexed citations

11.

Gaire, C., P. A. Snow, Tzu-Liang Chan, et al.. (2010). Morphology and texture evolution of nanostructured CaF₂films on amorphous substrates under oblique incidence flux. Nanotechnology. 21(44). 445701–445701. 13 indexed citations

12.

Krishnan, Rahul, et al.. (2010). Texture evolution of vertically aligned biaxial tungsten nanorods using RHEED surface pole figure technique. Nanotechnology. 21(32). 325704–325704. 11 indexed citations

13.

Chan, Tzu-Liang, C. Gaire, Toh‐Ming Lu, G.-C. Wang, & Shengbai Zhang. (2010). Type B epitaxy of Ge on CaF2(111) surface. Surface Science. 604(19-20). 1645–1648. 8 indexed citations

14.

Lu, Toh‐Ming, Huafang Li, C. Gaire, et al.. (2010). Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers. MRS Proceedings. 1268.

15.

Gaire, C., et al.. (2009). Small angle grain boundary Ge films on biaxial CaF2/glass substrate. Journal of Crystal Growth. 312(4). 607–610. 26 indexed citations

16.

Gaire, C., Fu Tang, & G.-C. Wang. (2008). In-situ reflection high-energy electron diffraction study of epitaxial growth of Cu on NaCl (100) under oblique angle vapor deposition. Thin Solid Films. 517(16). 4509–4514. 13 indexed citations

17.

Gaire, C., et al.. (2008). Mechanical properties of porous methyl silsesquioxane and nanoclustering silica films using atomic force microscope. Journal of Porous Materials. 17(1). 11–18. 7 indexed citations

18.

Gaire, C., et al.. (2005). Mechanical Testing of Isolated Amorphous Silicon Slanted Nanorods. Journal of Nanoscience and Nanotechnology. 5(11). 1893–1897. 26 indexed citations

19.

Tang, Fu, et al.. (2005). AFM, SEM andin situRHEED study of Cu texture evolution on amorphous carbon by oblique angle vapor deposition. Physical Review B. 72(3). 25 indexed citations

20.

Tang, Fu, Tansel Karabacak, Paul E. Morrow, et al.. (2005). Texture evolution during shadowing growth of isolated Ru columns. Physical Review B. 72(16). 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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