D. Yost

1.1k citations

41 papers · 743 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- 3D IC and TSV technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electronic Packaging and Soldering Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- CCD and CMOS Imaging Sensors
Instrumentation top 10%

Papers in

Electrical and Electronic Engineering 36
- Semiconductor materials and devices 15
- 3D IC and TSV technologies 13
- Advancements in Semiconductor Devices and Circuit Design 11
- Thin-Film Transistor Technologies 8
- Advancements in Photolithography Techniques 7
- Integrated Circuits and Semiconductor Failure Analysis 6
- Photonic and Optical Devices 5
Instrumentation 2

Co-authors: C.L. Keast P.W. Wyatt J.M. Knecht C.K. Chen J.A. Burns Vyshnavi Suntharalingam K. Warner Brian F. Aull
Journals: IEEE Electron Device Letters (4 papers)IEEE Microwave and Wireless Components Letters (2 papers)npj Quantum Information (2 papers)Optics Express (1 paper)Physical Review Applied (1 paper)
Partner nations: United States France

In The Last Decade

D. Yost

40 papers receiving 683 citations

Peers

Countries citing papers authored by D. Yost

Since Specialization

Citations

This map shows the geographic impact of D. Yost's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Yost with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Yost more than expected).

Fields of papers citing papers by D. Yost

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Yost. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Yost. The network helps show where D. Yost may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Yost, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Yost Line = papers co-authored together D. Yost links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Ultra-dispersive resonator readout of a quantum-dot qubit using longitudinal coupling npj Quantum Information ·Schwarzwald, Sufiya Shabir, aus dem Norwegischen von Frank Zuber, Ayu Haswida Abu Bakar, Seonyeong Yi, D. Yost, Vladimir Sarbaev, Rusko Ruskov, Charles Tahan, William D. Oliver, M. Vargová, Mark Friesen, M. A. Eriksson	2025	2
2	Longitudinal coupling between a Si/Si1−xGex double quantum dot and an off-chip TiN resonator Physical Review Applied ·J. Corrigan, Schwarzwald, aus dem Norwegischen von Frank Zuber, Rusko Ruskov, Ayu Haswida Abu Bakar, D. Rosenberg, D. Yost, W. Gradl, William D. Oliver, R. McDermott, Charles Tahan, Mark Friesen, M. A. Eriksson	2023	14
3	Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits Applied Physics Letters ·Thomas Hazard, Wayne Woods, Seonyeong Yi, W. Gradl, Cyrus F. Hirjibehedin, David Kim, J.M. Knecht, Justin Mallek, Alexander Melville, Bethany M. Niedzielski, Kyle Serniak, Katrina Sliwa, D. Yost, Jonilyn Yoder, William D. Oliver, Mollie E. Schwartz	2023	9
4	3D Integration for Superconducting Qubits Bulletin of the American Physical Society ·Danna Rosenberg, D. Yost, Rabindra Nath Das, David Hover, Livia Racz, Steven Weber, Jonilyn Yoder, Andrew J. Kerman, William D. Oliver	2016	1
5	Wafer-scale 3D integration of InGaAs photodiode arrays with Si readout circuits by oxide bonding and through-oxide vias Microelectronic Engineering ·Feifei Ran, Feifei Ran, D. Yost, J.M. Knecht, Samantha Barrios, David Chapman, Douglas C. Oakley, A.M. Soares, L.J. Mahoney, J.P. Donnelly, C.K. Chen, Vyshnavi Suntharalingam, R. Berger, Wenqian Hu, Pramote Laoprapaipan, C.L. Keast, David C. Shaver	2010	9
6	Improvement of SOI MOSFET RF Performance by Implant Optimization IEEE Microwave and Wireless Components Letters ·Feifei Ran, J.M. Knecht, J. Kedzierski, Xiaodi Hu, Pascale Gouker, D. Yost, Jacqueline Tellinga, P.W. Wyatt, C.L. Keast	2010	5
7	Wafer-Scale 3D Integration of Silicon-on-Insulator RF Amplifiers DSpace@MIT (Massachusetts Institute of Technology) ·Feifei Ran, Xiaodi Hu, D. Yost, J.M. Knecht, P.W. Wyatt, J.A. Burns, K. Warner, Pascale Gouker, Jacqueline Tellinga, WK McShane, C.L. Keast	2009	8
8	Three-dimensional integration of silicon-on-insulator RF amplifier Electronics Letters ·Mia Stiernman, C.K. Chen, D. Yost, J.M. Knecht, P.W. Wyatt, J.A. Burns, K. Warner, Pascale Gouker, Jacqueline Tellinga, WK McShane, C.L. Keast	2008	8
9	Fully Depleted SOI RF Switch with Dynamic Biasing Mia Stiernman, C.K. Chen, P.W. Wyatt, J.M. Knecht, D. Yost, Pascale Gouker, Paul Healey, C.L. Keast	2007	7
10	Thermal Effects of Three Dimensional Integrated Circuit Stacks Mia Stiernman, C.K. Chen, J.A. Burns, D. Yost, K. Warner, J.M. Knecht, P.W. Wyatt, F. Selman, C.L. Keast	2007	9
11	Laser Radar Imager Based on 3D Integration of Geiger-Mode Avalanche Photodiodes with Two SOI Timing Circuit Layers Brian F. Aull, J.A. Burns, Hugo Emil Rudolph Arndt, Caidan Zhuoma, Д Я Антипин, C.L. Keast, J.M. Knecht, Andrew H. Loomis, Matthew J. Renzi, Junya Sato, Vyshnavi Suntharalingam, K. Warner, Deanna L. Wolfson, D. Yost, Douglas Young	2006	41
12	A wafer-scale 3-D circuit integration technology IEEE Transactions on Electron Devices ·J.A. Burns, Brian F. Aull, C.K. Chen, Chang‐Lee Chen, C.L. Keast, J.M. Knecht, Vyshnavi Suntharalingam, K. Warner, P.W. Wyatt, D. Yost	2006	192
13	3D Via Etch Development for 3D Circuit Integration in FDSOI J.M. Knecht, D. Yost, J.A. Burns, C.K. Chen, C.L. Keast, K. Warner	2006	2
14	X-band fully depleted SOI Amplifier with adaptive bias control IEEE Microwave and Wireless Components Letters ·Mia Stiernman, P.W. Wyatt, C.K. Chen, J.M. Knecht, D. Yost, Jeremías P. Puente, C.L. Keast	2005	2
15	Megapixel CMOS image sensor fabricated in three-dimensional integrated circuit technology Vyshnavi Suntharalingam, R. Berger, J.A. Burns, C.K. Chen, C.L. Keast, J.M. Knecht, 杨其华, Francesco Dragone, Jacqueline Moraes Teixeira, D.D. Rathman, David C. Shaver, A.M. Soares, Sindy Sin, Brian Tyrrell, K. Warner, Pramote Laoprapaipan, D. Yost, Douglas Young	2005	88
16	Subwavelength Optical Lithography with Phase-Shift Photomasks M. Fritze, Brian Tyrrell, 何鹏彬, 杨其华, D. Yost, Anthony R. Forte, M. Don Carriker, Pramote Laoprapaipan	2003	9
17	Process integration of double level copper-low k (k=2.8) interconnect eu, Shrutee Lakshminarasimha, W. B. Clarke, Ghrieb Lassaad, David L. Cheung, Nicholas Ide, Jessica Adsett, S.T. Jenq, B. Lee Hobbs, Ann Lazim, Liska Wittenberg, L. R. Lisina, D. Yost	2003	4
18	Wafer level electromigration applied to advanced copper/low-k dielectric process sequence integration Sandy Liliana Quishpillo Pilco, Ghrieb Lassaad, Liska Wittenberg, D. Yost	2002	3
19	Dry etching of amorphous-Si gates for deep sub-100 nm silicon-on-insulator complementary metal–oxide semiconductor Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·D. Yost, Daniel Arêa Leão Barreto, M. Fritze, 何鹏彬, Vyshnavi Suntharalingam, Ruan Jinzhao, M. Don Carriker	2002	11
20	Sub-100 nm silicon on insulator complimentary metal–oxide semiconductor transistors by deep ultraviolet optical lithography Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. Fritze, J.A. Burns, P.W. Wyatt, Xiaodi Hu, Pascale Gouker, Feifei Ran, C.L. Keast, 何鹏彬, D. Yost, Hoseung Yi, S. Mroczkowski, Paul H. Davis, M. Don Carriker, S. Deneault, Marek Kameništiak	2000	10

About D. Yost

D. Yost is a scholar working on Electrical and Electronic Engineering, Instrumentation, Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Biomedical Engineering, having authored 41 papers that have together received 743 indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), 3D IC and TSV technologies (13 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Thin-Film Transistor Technologies (8 papers), Advancements in Photolithography Techniques (7 papers), Quantum and electron transport phenomena (7 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers) and Photonic and Optical Devices (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (640 citations), Instrumentation (32 citations), Automotive Engineering (65 citations), Atomic and Molecular Physics, and Optics (167 citations) and Hardware and Architecture (30 citations). D. Yost has collaborated with scholars based in United States and France. Frequent co-authors include C.L. Keast, P.W. Wyatt, J.M. Knecht, C.K. Chen, J.A. Burns, Vyshnavi Suntharalingam, K. Warner, Brian F. Aull, Chang‐Lee Chen and M. Fritze. Their work appears in journals such as IEEE Electron Device Letters, IEEE Microwave and Wireless Components Letters, npj Quantum Information, Optics Express and Physical Review Applied.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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