S. Galdin

552 total citations
35 papers, 342 citations indexed

About

S. Galdin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. Galdin has authored 35 papers receiving a total of 342 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in S. Galdin's work include Advancements in Semiconductor Devices and Circuit Design (29 papers), Semiconductor materials and devices (29 papers) and Semiconductor Quantum Structures and Devices (8 papers). S. Galdin is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (29 papers), Semiconductor materials and devices (29 papers) and Semiconductor Quantum Structures and Devices (8 papers). S. Galdin collaborates with scholars based in France, Germany and Spain. S. Galdin's co-authors include Philippe Dollfus, P. Hesto, Arnaud Bournel, Sylvain Barraud, Éric Cassan, V. Aubry-Fortuna, H. J. Osten, J.E. Velázquez-Pérez, Mireille Mouis and C. Chassat and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

S. Galdin

33 papers receiving 327 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Galdin France 12 297 178 80 35 13 35 342
Sung-Yong Chung United States 11 309 1.0× 166 0.9× 54 0.7× 35 1.0× 13 1.0× 25 339
J.L. Gentner Germany 13 275 0.9× 258 1.4× 35 0.4× 37 1.1× 17 1.3× 39 351
K.-H. Goetz Germany 5 268 0.9× 300 1.7× 92 1.1× 36 1.0× 24 1.8× 8 335
D.L. Huffaker United States 9 331 1.1× 317 1.8× 160 2.0× 62 1.8× 8 0.6× 18 385
K. A. Stair United States 7 294 1.0× 260 1.5× 28 0.3× 28 0.8× 8 0.6× 25 326
P. J. Corvini United States 12 391 1.3× 201 1.1× 68 0.8× 10 0.3× 11 0.8× 33 423
Hiroshi Fushimi Japan 13 389 1.3× 233 1.3× 64 0.8× 56 1.6× 25 1.9× 23 433
K. Wolter Germany 11 311 1.0× 303 1.7× 74 0.9× 30 0.9× 11 0.8× 36 362
C. Schulhauser Germany 6 208 0.7× 352 2.0× 121 1.5× 37 1.1× 18 1.4× 12 388
R.J. Capik United States 11 362 1.2× 274 1.5× 38 0.5× 42 1.2× 14 1.1× 24 412

Countries citing papers authored by S. Galdin

Since Specialization
Citations

This map shows the geographic impact of S. Galdin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Galdin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Galdin more than expected).

Fields of papers citing papers by S. Galdin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Galdin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Galdin. The network helps show where S. Galdin may publish in the future.

Co-authorship network of co-authors of S. Galdin

This figure shows the co-authorship network connecting the top 25 collaborators of S. Galdin. A scholar is included among the top collaborators of S. Galdin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Galdin. S. Galdin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dollfus, Philippe, et al.. (2004). Electronic properties of semiconductor quantum dots for Coulomb blockade applications. Physica E Low-dimensional Systems and Nanostructures. 21(2-4). 496–500. 7 indexed citations
2.
Saint-Martin, Jérôme, et al.. (2004). Influence of Ballistic Effects in Ultra-Small MOSFETs. Journal of Computational Electronics. 3(3-4). 207–210. 5 indexed citations
3.
Cassan, Éric, S. Galdin, Philippe Dollfus, & P. Hesto. (2003). Modeling of direct tunneling gate current in ultra-thin gate oxide MOSFETs: a comparison between simulators. 115–118.
4.
Dollfus, Philippe, et al.. (2003). Simple one-dimensional model for electronic structure calculation of unbiased and biased silicon quantum dots in Coulomb blockade applications. Journal of Applied Physics. 94(8). 5053–5063. 13 indexed citations
5.
6.
7.
Dollfus, Philippe, et al.. (2002). Comparison of a density functional theory and a Hartree treatment of silicon quantum dot. Journal of Applied Physics. 92(6). 3141–3146. 27 indexed citations
8.
Dollfus, Philippe, et al.. (2002). First-order intervalley scattering in low-dimensional systems. Physical review. B, Condensed matter. 65(21). 14 indexed citations
9.
Cassan, Éric, Philippe Dollfus, S. Galdin, & P. Hesto. (2001). Semiclassical and wave mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultra-thin oxides. IEEE Transactions on Electron Devices. 48(4). 715–721. 11 indexed citations
10.
Dollfus, Philippe, S. Galdin, P. Hesto, & H. J. Osten. (2001). Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures. Journal of Materials Science Materials in Electronics. 12(4-6). 245–248. 2 indexed citations
11.
Cassan, Éric, Philippe Dollfus, & S. Galdin. (2001). Wave-mechanical study of gate tunneling leakage reduction in ultra-thin (<2 nm) dielectric MOS and H-MOS devices. Journal of Non-Crystalline Solids. 280(1-3). 63–68. 2 indexed citations
12.
Cassan, Éric, S. Galdin, Philippe Dollfus, & P. Hesto. (2000). Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs. IEICE Transactions on Electronics. 83(8). 1194–1202. 1 indexed citations
13.
Galdin, S., Philippe Dollfus, V. Aubry-Fortuna, P. Hesto, & H. J. Osten. (2000). Band offset predictions for strained group IV alloys: Si1-x-yGexCyon Si(001) and Si1-xGexon Si1-zGez(001). Semiconductor Science and Technology. 15(6). 565–572. 34 indexed citations
14.
Galdin, S., et al.. (1999). Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation. Solid-State Electronics. 43(10). 1869–1877.
15.
Galdin, S., et al.. (1999). Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−yCy(y ≤ 0.03). The European Physical Journal Applied Physics. 7(1). 73–77. 7 indexed citations
16.
Bournel, Arnaud, et al.. (1997). Modelling of gate-induced spin precession in a striped channel high electron mobility transistor. Solid State Communications. 104(2). 85–89. 19 indexed citations
17.
Dollfus, Philippe, et al.. (1996). Operation of SiGe channel heterojunction p-MOSFET. Applied Surface Science. 102. 259–262. 1 indexed citations
18.
Galdin, S., Philippe Dollfus, Mireille Mouis, F. Meyer, & P. Hesto. (1995). Influence of base dopant out-diffusion into the emitter in heterojunction bipolar transistor using Monte Carlo simulations. Journal of Crystal Growth. 157(1-4). 231–235. 1 indexed citations
19.
Galdin, S., Philippe Dollfus, & P. Hesto. (1994). Static and dynamic behavior of a Si/Si0.8Ge0.2/Si heterojunction bipolar transistor using Monte Carlo simulation. Journal of Applied Physics. 75(6). 2963–2969. 6 indexed citations
20.
Galdin, S., et al.. (1992). Monte-Carlo study of the nonstationary transport in Si-SiGe HJBTs. Semiconductor Science and Technology. 7(3B). B540–B542. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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