Fatima Husna

1.6k citations

31 papers · 1.3k indexed · h-index 16

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Electromagnetic Compatibility and Noise Suppression
- Advancements in Semiconductor Devices and Circuit Design
- Multilevel Inverters and Converters
- Advanced DC-DC Converters

Papers in

Condensed Matter Physics 13
- GaN-based semiconductor devices and materials 13
Electrical and Electronic Engineering 28
- Silicon Carbide Semiconductor Technologies 21
- Semiconductor materials and devices 13
- Multilevel Inverters and Converters 9
- Electromagnetic Compatibility and Noise Suppression 5
- Advancements in Semiconductor Devices and Circuit Design 4

Co-authors: Anant Agarwal Sei‐Hyung Ryu Sarah K. Haney Robert Callanan Tiefu ZhaoJun WangAlex Q. Huang Jun Li
Journals: IEEE Electron Device Letters (5 papers)IEEE Transactions on Electron Devices (2 papers)Applied Physics Letters (2 papers)Semiconductor Science and Technology (1 paper)Microelectronics Reliability (1 paper)
Partner nations: United States China United Kingdom

In The Last Decade

Fatima Husna

31 papers receiving 1.3k citations

Peers

Countries citing papers authored by Fatima Husna

Since Specialization

Citations

This map shows the geographic impact of Fatima Husna's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fatima Husna with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fatima Husna more than expected).

Fields of papers citing papers by Fatima Husna

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fatima Husna. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fatima Husna. The network helps show where Fatima Husna may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Fatima Husna, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Fatima Husna Line = papers co-authored together Fatima Husna links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	AI-Powered Innovation in Flexible and Implantable Electronics: From Sensors to Systems Authors Imelin Sagita S Pardosi, Eunmee Kim, Ir. W.A. Mahn, Fatima Husna, 清治国吉	2025	1
2	Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO₂gate dielectric Semiconductor Science and Technology ·M. Lachab, Xingfa Tian, Fatima Husna, V. Adivarahan, Q. Fareed, M.A. Khan	2012	14
3	Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V Applied Physics Express ·امید ویسی, Xingfa Tian, Fatima Husna, Володимир Когут, Q. Fareed, V. Adivarahan, M. Lachab, Asif Khan	2011	22
4	Effect of crystallographic defects on the reverse performance of 4H–SiC JBS diodes Microelectronics Reliability ·C. Wang, Qingchun Zhang, Fatima Husna, Anant Agarwal, T. S. Sudarshan	2008	27
5	Status of 1200V 4H-SiC Power DMOSFETs Hadi Ghodrat, Fatima Husna, Anant Agarwal, Aivars J. Lelis, Bruce Geil, Charles Scozzie, Mrinal K. Das, Sei‐Hyung Ryu, Sarah K. Haney, Charlotte Jonas, Craig Capell, Min Keun Shim, Jinjin Hu, Robert Callanan	2007	10
6	A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs Materials science forum ·Sei‐Hyung Ryu, Sumi Krishnaswami, Brett Hull, Contract Joe, Fatima Husna, Jim Richmond, Anant Agarwal, John W. Palmour, James D. Scofield	2007	10
7	A New Degradation Mechanism in High-Voltage SiC Power MOSFETs IEEE Electron Device Letters ·Anant Agarwal, Fatima Husna, Sarah K. Haney, Sei‐Hyung Ryu	2007	231
8	High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs Materials science forum ·James D. Scofield, H. Kosai, Juliana Menezes da Cunha Rodrigues Nasi, Sei‐Hyung Ryu, Sumi Krishnaswami, Fatima Husna, Anant Agarwal	2007	5
9	First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs Materials science forum ·Anant Agarwal, Fatima Husna, Jeremy S. Haley, A. Landa-Hernandez, Pan Ying, Sumi Krishnaswami, Craig Capell, Sei‐Hyung Ryu, John W. Palmour	2006	1
10	Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal Materials science forum ·Mrinal K. Das, Brett Hull, Sumi Krishnaswami, Fatima Husna, Sarah K. Haney, Aivars J. Lelis, Charles Scozzie, James D. Scofield	2006	10
11	High Speed Switching Devices in 4H-SiC - Performance and Reliability Sei‐Hyung Ryu, Sumi Krishnaswami, Brett Hull, Contract Joe, Mrinal K. Das, Jim Richmond, Fatima Husna, Jincai Zhang, Anant Agarwal, John W. Palmour, Steven K. Fox, Tanvir Sajid, D.C. Katsis, Charles Scozzie, James D. Scofield	2006	14
12	Development of A 4H-SiC CMOS Inverter MRS Proceedings ·Brett Hull, Sei‐Hyung Ryu, Fatima Husna, Jim Richmond, John W. Palmour, James D. Scofield	2006	10
13	Performance stability of high‐power III‐nitride metal‐oxide semiconductor‐heterostructure field‐effect transistors Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Xiao-Chun Yan, Fatima Husna, Xiaomeng He, Khlaifia Wafa, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan	2005	3
14	Insulated gate III-N devices and ICs G. Simin, V. Adivarahan, Fatima Husna, Xiao-Chun Yan, A. Koudymov, Xiaoli He, B. H. Kim, José Antonio Fernández Alonso, Young-Tae SHIN, Muhammad Asif Khan, Ahmad Tarakji, Jie Deng, R. Gaška, M. S. Shur	2004	1
15	High-power K-band submicron insulating gate heterostructure field-effect transistors Ahmad Tarakji, G. Simin, Fatima Husna, V. Adivarahan, Mikhail Gaevski, Wenhong Sun, J. Yang, M.A. Khan, M. S. Shur, R. Gaška	2004	1
16	Large-signal linearity in III-N MOSDHFETs IEEE Electron Device Letters ·Ahmad Tarakji, Fatima Husna, X. Hu, Takashi Saitoh, G. Simin, Muhammad Asif Khan, M. S. Shur, R. Gaška	2003	35
17	Submicron gate Si₃N₄/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors IEEE Electron Device Letters ·V. Adivarahan, Mikhail Gaevski, Wenhong Sun, Fatima Husna, A. Koudymov, Xiao-Chun Yan, G. Simin, J. Yang, M.A. Khan, Ahmad Tarakji, M. S. Shur, R. Gaška	2003	73
18	Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill IEEE Electron Device Letters ·Jie Sun, Fatima Husna, A. Koudymov, A. Chitnis, X. Hu, 浩樹梯, Jianping Zhang, G. Simin, J. Yang, M.A. Khan	2003	87
19	AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors Applied Physics Letters ·Zbigniev Twardowski, Jianping Zhang, V. Adivarahan, A. Koudymov, Fatima Husna, G. Simin, Jie Yang, M. Asif Khan	2003	70
20	Maximum current in nitride-based heterostructure field-effect transistors Applied Physics Letters ·A. Koudymov, Fatima Husna, G. Simin, J. Yang, M. Asif Khan, Ahmad Tarakji, X. Hu, M. S. Shur, R. Gaška	2002	31

About Fatima Husna

Fatima Husna is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 31 papers that have together received 1.3k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (21 papers), Semiconductor materials and devices (13 papers), GaN-based semiconductor devices and materials (13 papers), Multilevel Inverters and Converters (9 papers), Ga2O3 and related materials (7 papers), Electromagnetic Compatibility and Noise Suppression (5 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers) and Semiconductor materials and interfaces (3 papers). The work is most often cited by research in Condensed Matter Physics (509 citations), Electrical and Electronic Engineering (1.2k citations), Electronic, Optical and Magnetic Materials (278 citations), Atomic and Molecular Physics, and Optics (173 citations) and Ceramics and Composites (28 citations). Fatima Husna has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include Anant Agarwal, Sei‐Hyung Ryu, Sarah K. Haney, Robert Callanan, Tiefu Zhao, Jun Wang, Alex Q. Huang, Jun Li, G. Simin and A. Koudymov. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, Semiconductor Science and Technology and Microelectronics Reliability.

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