Hamid Amini Moghadam

991 total citations
51 papers, 813 citations indexed

About

Hamid Amini Moghadam is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hamid Amini Moghadam has authored 51 papers receiving a total of 813 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 13 papers in Condensed Matter Physics and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hamid Amini Moghadam's work include Silicon Carbide Semiconductor Technologies (40 papers), Semiconductor materials and devices (32 papers) and Advancements in Semiconductor Devices and Circuit Design (24 papers). Hamid Amini Moghadam is often cited by papers focused on Silicon Carbide Semiconductor Technologies (40 papers), Semiconductor materials and devices (32 papers) and Advancements in Semiconductor Devices and Circuit Design (24 papers). Hamid Amini Moghadam collaborates with scholars based in Australia, Iran and India. Hamid Amini Moghadam's co-authors include Sima Dimitrijev, Jisheng Han, Daniel Haasmann, Ali A. Orouji, Philip Tanner, Amirhossein Aminbeidokhti, Baikui Li, Xi Tang, Mayank Chaturvedi and Parviz Keshavarzi and has published in prestigious journals such as Scientific Reports, IEEE Transactions on Power Electronics and IEEE Access.

In The Last Decade

Hamid Amini Moghadam

50 papers receiving 797 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hamid Amini Moghadam Australia 16 718 311 180 124 88 51 813
Alfonso Patti Italy 10 464 0.6× 376 1.2× 199 1.1× 88 0.7× 106 1.2× 18 569
Baoxing Duan China 20 1.1k 1.5× 274 0.9× 144 0.8× 97 0.8× 81 0.9× 124 1.2k
Yoshiharu Anda Japan 12 486 0.7× 376 1.2× 208 1.2× 46 0.4× 102 1.2× 27 563
Anindya Nath United States 14 415 0.6× 264 0.8× 180 1.0× 147 1.2× 235 2.7× 43 591
Gregor Pobegen Austria 20 1.4k 2.0× 328 1.1× 165 0.9× 157 1.3× 155 1.8× 99 1.5k
Aditya P. Karmarkar United States 12 469 0.7× 305 1.0× 241 1.3× 60 0.5× 95 1.1× 24 607
Qihao Song United States 14 583 0.8× 494 1.6× 147 0.8× 69 0.6× 75 0.9× 48 690
Wenjian Liu United States 11 202 0.3× 212 0.7× 175 1.0× 93 0.8× 133 1.5× 25 366
T. P. Chow United States 11 334 0.5× 229 0.7× 162 0.9× 108 0.9× 108 1.2× 22 436
Fatima Husna United States 16 1.2k 1.6× 509 1.6× 278 1.5× 173 1.4× 133 1.5× 31 1.3k

Countries citing papers authored by Hamid Amini Moghadam

Since Specialization
Citations

This map shows the geographic impact of Hamid Amini Moghadam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hamid Amini Moghadam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hamid Amini Moghadam more than expected).

Fields of papers citing papers by Hamid Amini Moghadam

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hamid Amini Moghadam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hamid Amini Moghadam. The network helps show where Hamid Amini Moghadam may publish in the future.

Co-authorship network of co-authors of Hamid Amini Moghadam

This figure shows the co-authorship network connecting the top 25 collaborators of Hamid Amini Moghadam. A scholar is included among the top collaborators of Hamid Amini Moghadam based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hamid Amini Moghadam. Hamid Amini Moghadam is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Chaturvedi, Mayank, Daniel Haasmann, Hamid Amini Moghadam, & Sima Dimitrijev. (2023). Electrically Active Defects in SiC Power MOSFETs. Energies. 16(4). 1771–1771. 9 indexed citations
3.
Chaturvedi, Mayank, et al.. (2022). A Figure of Merit for Selection of the Best Family of SiC Power MOSFETs. Electronics. 11(9). 1433–1433. 5 indexed citations
4.
Chaturvedi, Mayank, et al.. (2022). Quantified density of performance-degrading near-interface traps in SiC MOSFETs. Scientific Reports. 12(1). 4076–4076. 23 indexed citations
5.
Moghadam, Hamid Amini, et al.. (2022). Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review. Microelectronics Reliability. 139. 114800–114800. 13 indexed citations
6.
Chaturvedi, Mayank, et al.. (2021). Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method. IEEE Access. 9. 109745–109753. 5 indexed citations
7.
Mohd-Yasin, Faisal, et al.. (2020). A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances. IEEE Transactions on Power Electronics. 35(12). 12629–12632. 6 indexed citations
8.
Mohd-Yasin, Faisal, et al.. (2020). Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs. IEEE Access. 8. 187043–187051. 7 indexed citations
9.
Tang, Xi, Baikui Li, Hamid Amini Moghadam, et al.. (2018). Effect of Hole-Injection on Leakage Degradation in a <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math> </inline-formula>-GaN Gate AlGaN/GaN Power Transistor. IEEE Electron Device Letters. 39(8). 1203–1206. 20 indexed citations
10.
Tang, Xi, Baikui Li, Hamid Amini Moghadam, et al.. (2018). Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors. IEEE Electron Device Letters. 39(8). 1145–1148. 130 indexed citations
11.
Moghadam, Hamid Amini, et al.. (2017). The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors. Materials science forum. 897. 167–170. 1 indexed citations
12.
Aminbeidokhti, Amirhossein, et al.. (2016). Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 63(3). 1013–1019. 22 indexed citations
13.
Dimitrijev, Sima, Jisheng Han, Hamid Amini Moghadam, & Amirhossein Aminbeidokhti. (2015). Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices. MRS Bulletin. 40(5). 399–405. 65 indexed citations
14.
Moghadam, Hamid Amini, Sima Dimitrijev, Jisheng Han, Daniel Haasmann, & Amirhossein Aminbeidokhti. (2015). Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs. IEEE Transactions on Electron Devices. 62(8). 2670–2674. 51 indexed citations
15.
Tanner, Philip, et al.. (2014). Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs. Materials science forum. 778-780. 997–1000. 1 indexed citations
16.
Moghadam, Hamid Amini, et al.. (2014). Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes. Materials science forum. 778-780. 710–713. 4 indexed citations
17.
Moghadam, Hamid Amini, et al.. (2012). A novel method to trace flicker sources. 1–7. 5 indexed citations
18.
Orouji, Ali A., et al.. (2011). A novel step buried oxide Partial SOI LDMOSFET with Triple Drift layer. 174–177. 16 indexed citations
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Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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