M. Lachab

1.6k citations

61 papers · 1.3k indexed · h-index 21

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 32
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 17
Spectroscopy top 2%
- Spectroscopy and Laser Applications 15
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 14
Electrical and Electronic Engineering top 5%
- Terahertz technology and applications 13
- Semiconductor materials and devices 9
Materials Chemistry
- ZnO doping and properties 14
Mechanics of Materials
- Metal and Thin Film Mechanics 9

Co-authors: E. H. Linfield A. G. Davies Suraj P. Khanna V. Adivarahan Q. Fareed Asif Khan Shiro Sakai Mikhail A. Belkin
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Spectroscopy
Journals: Applied Physics Letters (10 papers)Journal of Crystal Growth (6 papers)Japanese Journal of Applied Physics (5 papers)
Partner nations: United Kingdom United States Japan

In The Last Decade

M. Lachab

61 papers receiving 1.2k citations

Peers

Countries citing papers authored by M. Lachab

Since Specialization

Citations

This map shows the geographic impact of M. Lachab's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Lachab with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Lachab more than expected).

Fields of papers citing papers by M. Lachab

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Lachab. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Lachab. The network helps show where M. Lachab may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Lachab, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Lachab Line = papers co-authored together M. Lachab links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates Applied Physics Express ·M. Lachab,Wenhong Sun,Rakesh Jain,Alex Dobrinsky,Mikhail Gaevski,Sergey Rumyantsev,M. S. Shur,Max Shatalov	2016	20
2	Efficient prediction of terahertz quantum cascade laser dynamics from steady-state simulations Applied Physics Letters ·Gary Agnew,Khalid K. Abdul-latiff,Thomas Taimre,Yah Leng Lim,M. Nikolić,A. Valavanis,Jonathan Cooper,Paul Dean,Suraj P. Khanna,M. Lachab,E. H. Linfield,A. G. Davies,P. Harrison,Z. Ikonić,D. Indjin,Aleksandar D. Rakić	2015	26
3	Transport properties of SiO₂/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate Journal of Physics D Applied Physics ·M. Lachab,Xingfa Tian,Q. Fareed,E. N. Tarkhov,V. Adivarahan,Asif Khan	2014	19
4	Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·د. رشا سيروب,M. Lachab,T Kenzaka,Iftikhar Ahmad,Bin Zhang,V. Adivarahan,Asif Khan	2014	11
5	MOCVD growth of semipolar Al_xGa_1−xN on m‐plane sapphire for applications in deep‐ultraviolet light emitters physica status solidi (a) ·K. Balakrishnan,M. Lachab,JohnC. Krantz,Douglas A. Blom,V. Adivarahan,Iftikhar Ahmad,Q. Fareed,M.A. Khan	2011	23
6	276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes Applied Physics Express ·星圆,امید ویسی,N. V. Budachev,M. Lachab,Bin Zhang,Ahmad Heidari,Jeong Eun Lee,Iftikhar Ahmad,吴洣麓,Q. Fareed,V. Adivarahan,Sergey Andreevich Gaifulin,Asif Khan	2011	40
7	A Hybrid Micro-Pixel Based Deep Ultraviolet Light-Emitting Diode Lamp Applied Physics Express ·星圆,Sergey Andreevich Gaifulin,Bin Zhang,M. Lachab,吴洣麓,Ahmad Heidari,Jeong Eun Lee,V. Adivarahan,Asif Khan	2010	29
8	MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection Journal of Crystal Growth ·M. Lachab,Suraj P. Khanna,P. Harrison,E. H. Linfield,Aurimas Čerškus,Р. С. Галямов,D. Seliuta,Gintaras Valušis	2010	6
9	First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells Japanese Journal of Applied Physics ·Krishnan Balakrishnan,V. Adivarahan,Q. Fareed,M. Lachab,Bin Zhang,Asif Khan	2010	40
10	Generation of Bessel beams using a terahertz quantum cascade laser Optics Letters ·Douglas Shaftel,Paul Dean,Suraj P. Khanna,M. Lachab,Subir Kumar Chakraborty,E. H. Linfield,A. G. Davies	2009	17
11	Terahertz quantum cascade lasers with copper metal-metal waveguides operating up to 178 K Optics Express ·Mikhail A. Belkin,Jonathan A. Fan,Sahand Hormoz,Federico Capasso,Suraj P. Khanna,M. Lachab,A. G. Davies,E. H. Linfield	2008	159
12	Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ-doped GaAs∕AlAs multiple quantum wells Applied Physics Letters ·D. Seliuta,G. Wischin,Bronislovas Čechavičius,Ellen Hayes Pistor,Gintaras Valušis,Щеголев Павел Евгеньевич,Matthew P. Halsall,P. Harrison,M. Lachab,Suraj P. Khanna,E. H. Linfield	2008	13
13	Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells Acta Physica Polonica A ·D. Seliuta,Bronislovas Čechavičius,G. Wischin,Zhizhong Ge,I. Grigelionis,Ellen Hayes Pistor,Gintaras Valušis,Щеголев Павел Евгеньевич,Matthew P. Halsall,M. Lachab,Suraj P. Khanna,P. Harrison,E. H. Linfield	2008	2
14	Evanescent-field Terahertz time-domain microscopy J. E. Cunningham,Matthew B. Byrne,P. C. Upadhya,C. Wood,HU Dongji,M. Lachab,Suraj P. Khanna,E. H. Linfield,A. G. Davies	2007	1
15	Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptions Applied Surface Science ·M. Lachab,H. Sakaki	2007	5
16	Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics ·Sung Hoon Chung,M. Lachab,Tao Wang,Y. Lacroix,Durga Basak,Q. Fareed,Appleboim,Katsushi Nishino,Shiro Sakai	2000	15
17	Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition Solid-State Electronics ·M. Lachab,Doo‐Hyeb Youn,R. S. Qhalid Fareed,X-L Yao,Shigeki Sakai	2000	40
18	Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics ·Doo‐Hyeb Youn,M. Lachab,Maosheng Hao,Tomoya Sugahara,Randy Kambana,Yoshiki Naoi,Shiro Sakai	1999	39
19	Investigation of the Optical Properties in InGaN/GaN Quantum Well Structure physica status solidi (b) ·朗洋大村,Daisuke Nakagawa,M. Lachab,T. Sugahara,Justus Sondermann	1999	3
20	Crystal structure and composition of polycrystalline CuInSe2 Renewable Energy ·CC Baan,M. Lachab,Margery Lawrence,C. Llinarès	1995	2

About M. Lachab

M. Lachab is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Spectroscopy, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 61 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (32 papers), Ga2O3 and related materials (17 papers), Spectroscopy and Laser Applications (15 papers), ZnO doping and properties (14 papers), Semiconductor Quantum Structures and Devices (14 papers), Terahertz technology and applications (13 papers), Metal and Thin Film Mechanics (9 papers) and Semiconductor materials and devices (9 papers). The work is most often cited by research in Condensed Matter Physics (708 citations), Electronic, Optical and Magnetic Materials (442 citations), Spectroscopy (337 citations), Atomic and Molecular Physics, and Optics (391 citations) and Electrical and Electronic Engineering (718 citations). M. Lachab has collaborated with scholars based in United Kingdom, United States and Japan. Frequent co-authors include E. H. Linfield, A. G. Davies, Suraj P. Khanna, V. Adivarahan, Q. Fareed, Asif Khan, Shiro Sakai, Mikhail A. Belkin, Federico Capasso and Jonathan A. Fan. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Japanese Journal of Applied Physics, Applied Physics Express and Journal of Applied Physics.

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