J.B. Fedison

728 total citations
26 papers, 616 citations indexed

About

J.B. Fedison is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, J.B. Fedison has authored 26 papers receiving a total of 616 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in J.B. Fedison's work include Silicon Carbide Semiconductor Technologies (22 papers), Semiconductor materials and devices (14 papers) and Semiconductor materials and interfaces (8 papers). J.B. Fedison is often cited by papers focused on Silicon Carbide Semiconductor Technologies (22 papers), Semiconductor materials and devices (14 papers) and Semiconductor materials and interfaces (8 papers). J.B. Fedison collaborates with scholars based in United States, Israel and China. J.B. Fedison's co-authors include T. Paul Chow, T. P. Chow, Hongqiang Lu, Yi Tang, I. Bhat, Michael J. Harrison, Robert E. Stahlbush, M. Fatemi, S. D. Arthur and L.B. Rowland and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Electron Device Letters.

In The Last Decade

J.B. Fedison

25 papers receiving 581 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.B. Fedison United States	13	558	156	122	94	80	26	616
Christian Brylinski France	13	418 0.7×	77 0.5×	109 0.9×	97 1.0×	136 1.7×	51	489
T. P. Chow United States	11	334 0.6×	229 1.5×	108 0.9×	162 1.7×	108 1.4×	22	436
Calvin H. Carter China	16	621 1.1×	79 0.5×	148 1.2×	114 1.2×	96 1.2×	23	671
Max N. Yoder United States	5	254 0.5×	140 0.9×	111 0.9×	70 0.7×	117 1.5×	15	362
H. Mitlehner Germany	14	882 1.6×	49 0.3×	141 1.2×	69 0.7×	83 1.0×	43	923
E. Downey United States	8	376 0.7×	55 0.4×	93 0.8×	75 0.8×	76 0.9×	11	424
Stephan G. Mueller United States	12	283 0.5×	176 1.1×	106 0.9×	139 1.5×	102 1.3×	32	454
C. Harris Sweden	10	271 0.5×	70 0.4×	46 0.4×	52 0.6×	93 1.2×	12	325
Masahiro Nagano Japan	14	670 1.2×	41 0.3×	203 1.7×	132 1.4×	97 1.2×	46	724
Yean-Kuen Fang Taiwan	13	474 0.8×	73 0.5×	63 0.5×	114 1.2×	223 2.8×	79	569

Countries citing papers authored by J.B. Fedison

Since Specialization

Citations

This map shows the geographic impact of J.B. Fedison's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.B. Fedison with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.B. Fedison more than expected).

Fields of papers citing papers by J.B. Fedison

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.B. Fedison. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.B. Fedison. The network helps show where J.B. Fedison may publish in the future.

Co-authorship network of co-authors of J.B. Fedison

This figure shows the co-authorship network connecting the top 25 collaborators of J.B. Fedison. A scholar is included among the top collaborators of J.B. Fedison based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.B. Fedison. J.B. Fedison is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Fedison, J.B. & Michael J. Harrison. (2016). COSS hysteresis in advanced superjunction MOSFETs. 247–252. 52 indexed citations

Fedison, J.B., J. L. Garrett, E. Downey, et al.. (2006). 4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal. Materials science forum. 527-529. 1265–1268. 1 indexed citations

Twigg, M. E., et al.. (2004). Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes. Materials science forum. 457-460. 537–542. 6 indexed citations

Twigg, M. E., Robert E. Stahlbush, M. Fatemi, et al.. (2004). Partial dislocations and stacking faults in 4H-SiC PiN diodes. Journal of Electronic Materials. 33(5). 472–476. 5 indexed citations

Twigg, M. E., Robert E. Stahlbush, M. Fatemi, et al.. (2003). Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes. Applied Physics Letters. 82(15). 2410–2412. 55 indexed citations

Tang, Yi, J.B. Fedison, & T. Paul Chow. (2002). High temperature characterization of implanted-emitter 4H-SiC BJT. 178–181. 2 indexed citations

Stahlbush, Robert E., et al.. (2002). Stacking-fault formation and propagation in 4H-SiC PiN diodes. Journal of Electronic Materials. 31(7). 827–827. 26 indexed citations

Elasser, Ahmed, et al.. (2002). Silicon carbide GTOs: static and dynamic characterization. 1. 359–364. 3 indexed citations

Fedison, J.B., T. Paul Chow, M. Ghezzo, & J. Kretchmer. (2002). Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors. 175–178. 1 indexed citations

10.

Stahlbush, Robert E., et al.. (2002). Stacking-fault formation and propagation in 4H-SiC PiN diodes. Journal of Electronic Materials. 31(5). 370–375. 45 indexed citations

11.

Fedison, J.B., T. Paul Chow, Anant Agarwal, et al.. (2002). Switching characteristics of 3 kV 4H-SiC GTO thyristors. 135–136. 7 indexed citations

12.

Tang, Yi, J.B. Fedison, & T. Paul Chow. (2002). High-voltage implanted-emitter 4H-SiC BJTs. IEEE Electron Device Letters. 23(1). 16–18. 14 indexed citations

13.

Tang, Yi, J.B. Fedison, & T. Paul Chow. (2002). An implanted-emitter 4H-SiC bipolar transistor with high current gain. 131–132. 6 indexed citations

14.

Tang, Yi, J.B. Fedison, & T. Paul Chow. (2001). An implanted-emitter 4H-SiC bipolar transistor with high current gain. IEEE Electron Device Letters. 22(3). 119–120. 35 indexed citations

15.

Fedison, J.B., et al.. (2001). Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers. IEEE Electron Device Letters. 22(3). 130–132. 34 indexed citations

16.

Fedison, J.B. & T. Paul Chow. (2001). Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors. Materials science forum. 353-356. 739–742. 1 indexed citations

17.

Fedison, J.B., Zhongda Li, V. Khemka, et al.. (2000). Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers. Materials science forum. 338-342. 1367–1370. 3 indexed citations

18.

Chow, T. Paul, V. Khemka, J.B. Fedison, et al.. (2000). SiC and GaN bipolar power devices. Solid-State Electronics. 44(2). 277–301. 89 indexed citations

19.

Fedison, J.B., T. P. Chow, Hongqiang Lu, & I. Bhat. (1998). Electrical characteristics of magnesium-doped gallium nitride junction diodes. Applied Physics Letters. 72(22). 2841–2843. 93 indexed citations

20.

Fedison, J.B., T. P. Chow, Hongqiang Lu, & I. Bhat. (1997). Reactive Ion Etching of GaN in BCl3 / N 2 Plasmas. Journal of The Electrochemical Society. 144(8). L221–L224. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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