Mikhail Gaevski

2.2k total citations
86 papers, 1.8k citations indexed

About

Mikhail Gaevski is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Mikhail Gaevski has authored 86 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 76 papers in Condensed Matter Physics, 48 papers in Electrical and Electronic Engineering and 37 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Mikhail Gaevski's work include GaN-based semiconductor devices and materials (65 papers), Ga2O3 and related materials (35 papers) and Semiconductor materials and devices (23 papers). Mikhail Gaevski is often cited by papers focused on GaN-based semiconductor devices and materials (65 papers), Ga2O3 and related materials (35 papers) and Semiconductor materials and devices (23 papers). Mikhail Gaevski collaborates with scholars based in United States, Russia and Norway. Mikhail Gaevski's co-authors include V. Adivarahan, G. Simin, Jinwei Yang, M. Asif Khan, Jianping Zhang, Asif Khan, Zheng Gong, M. Shatalov, Changqing Chen and E. Kuokštis and has published in prestigious journals such as Nano Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Mikhail Gaevski

85 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mikhail Gaevski United States 21 1.5k 844 677 639 397 86 1.8k
Yoshihiko Toyoda Japan 9 1.5k 1.0× 785 0.9× 918 1.4× 682 1.1× 294 0.7× 16 1.9k
A. V. Lunev United States 20 1.3k 0.8× 792 0.9× 737 1.1× 873 1.4× 509 1.3× 55 2.0k
D. K. Wickenden United States 21 1.1k 0.7× 611 0.7× 540 0.8× 597 0.9× 266 0.7× 68 1.5k
Markus Pristovsek Germany 26 1.4k 0.9× 668 0.8× 927 1.4× 920 1.4× 360 0.9× 153 2.3k
R. P. Seĭsyan Russia 11 854 0.6× 631 0.7× 480 0.7× 515 0.8× 525 1.3× 75 1.7k
Kentaro Onabe Japan 23 1.3k 0.8× 463 0.5× 724 1.1× 1.2k 1.9× 300 0.8× 205 2.2k
B. El Jani Tunisia 22 1.1k 0.7× 519 0.6× 790 1.2× 952 1.5× 217 0.5× 147 1.8k
A. Soltani France 25 696 0.5× 387 0.5× 559 0.8× 825 1.3× 337 0.8× 93 1.5k
K. H. Ploog Germany 23 2.0k 1.3× 927 1.1× 1.4k 2.0× 1.1k 1.7× 508 1.3× 78 3.0k
Balaji Raghothamachar United States 22 609 0.4× 365 0.4× 456 0.7× 1.2k 1.8× 344 0.9× 182 1.7k

Countries citing papers authored by Mikhail Gaevski

Since Specialization
Citations

This map shows the geographic impact of Mikhail Gaevski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mikhail Gaevski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mikhail Gaevski more than expected).

Fields of papers citing papers by Mikhail Gaevski

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mikhail Gaevski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mikhail Gaevski. The network helps show where Mikhail Gaevski may publish in the future.

Co-authorship network of co-authors of Mikhail Gaevski

This figure shows the co-authorship network connecting the top 25 collaborators of Mikhail Gaevski. A scholar is included among the top collaborators of Mikhail Gaevski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mikhail Gaevski. Mikhail Gaevski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gaevski, Mikhail, Kamal Hussain, Abdullah Mamun, et al.. (2021). Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes. Applied Physics Express. 14(8). 84002–84002. 47 indexed citations
2.
Mamun, Abdullah, et al.. (2021). Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate. Journal of materials research/Pratt's guide to venture capital sources. 36(21). 4360–4369. 10 indexed citations
3.
Hussain, Kamal, Abdullah Mamun, Mikhail Gaevski, et al.. (2020). An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices. physica status solidi (a). 217(7). 6 indexed citations
4.
Gaevski, Mikhail, Kamal Hussain, Abdullah Mamun, et al.. (2020). Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs. Applied Physics Letters. 117(23). 9 indexed citations
5.
Hussain, Kamal, Abdullah Mamun, Mikhail Gaevski, et al.. (2020). High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V. Applied Physics Express. 14(1). 14003–14003. 10 indexed citations
6.
7.
Gaevski, Mikhail, M. V. S. Chandrashekhar, X. Hu, et al.. (2019). Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO 2 dielectric. Semiconductor Science and Technology. 34(12). 125001–125001. 13 indexed citations
8.
Gaevski, Mikhail, Kamal Hussain, Abdullah Mamun, et al.. (2019). Current collapse in high-Al channel AlGaN HFETs. Applied Physics Express. 12(7). 74001–74001. 12 indexed citations
9.
Hussain, Kamal, Virginia D. Wheeler, Charles R. Eddy, et al.. (2019). Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence. Applied Physics Letters. 115(21). 4 indexed citations
10.
Lachab, M., Wenhong Sun, Rakesh Jain, et al.. (2016). Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates. Applied Physics Express. 10(1). 12702–12702. 20 indexed citations
11.
James, Teena, Yevgeniy V. Kalinin, Chih‐Chieh Chan, et al.. (2012). Voltage-Gated Ion Transport through Semiconducting Conical Nanopores Formed by Metal Nanoparticle-Assisted Plasma Etching. Nano Letters. 12(7). 3437–3442. 57 indexed citations
12.
Deng, Yanqing, Md. Monirul Islam, Mikhail Gaevski, et al.. (2008). Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions. Solid-State Electronics. 52(7). 1106–1113. 2 indexed citations
13.
Adivarahan, V., et al.. (2008). Double-Recessed High-Frequency AlInGaN/InGaN/GaN Metal–Oxide Double Heterostructure Field-Effect Transistors. IEEE Transactions on Electron Devices. 55(2). 495–499. 19 indexed citations
14.
Gong, Zheng, Mikhail Gaevski, V. Adivarahan, et al.. (2006). Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire. Applied Physics Letters. 88(12). 63 indexed citations
15.
Chen, Changqing, Jianping Zhang, Jinwei Yang, et al.. (2003). A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire. Japanese Journal of Applied Physics. 42(Part 2, No. 7B). L818–L820. 47 indexed citations
16.
Zhang, Jianping, Mikhail Gaevski, Q. Fareed, et al.. (2002). Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management. Applied Physics Letters. 80(19). 3542–3544. 163 indexed citations
17.
Gaevski, Mikhail, et al.. (2002). Three-dimensional investigations of electrical barriers using electron beam induced current measurements. Journal of Applied Physics. 91(5). 2713–2724. 6 indexed citations
18.
Kuokštis, E., Mikhail Gaevski, Wenhong Sun, et al.. (2002). Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells. Applied Physics Letters. 81(22). 4130–4132. 96 indexed citations
19.
Bobyl, A. V., Mikhail Gaevski, S. G. Konnikov, et al.. (1996). Tc-Mapping and Investigation of Water-Initiated Modification of YBa2Cu3O7-x Thin Films by Low Temperature Scanning Electron Microscopy. Scanning microscopy. 10(3). 679–695. 3 indexed citations
20.
Baziljevich, M., A. V. Bobyl, H. Bratsberg, et al.. (1996). Fractal Structure Near the Percolation Threshold for YBa2Cu3O7 Epitaxial Films. Journal de Physique IV (Proceedings). 6(C3). C3–259. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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