Asif Khan

4.2k total citations · 1 hit paper
127 papers, 3.1k citations indexed

About

Asif Khan is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Asif Khan has authored 127 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 114 papers in Condensed Matter Physics, 72 papers in Electrical and Electronic Engineering and 52 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Asif Khan's work include GaN-based semiconductor devices and materials (114 papers), Ga2O3 and related materials (52 papers) and Semiconductor materials and devices (38 papers). Asif Khan is often cited by papers focused on GaN-based semiconductor devices and materials (114 papers), Ga2O3 and related materials (52 papers) and Semiconductor materials and devices (38 papers). Asif Khan collaborates with scholars based in United States, Lithuania and Japan. Asif Khan's co-authors include Krishnan Balakrishnan, V. Adivarahan, G. Simin, M. S. Shur, Q. Fareed, Mikhail Gaevski, R. Gaška, M. V. S. Chandrashekhar, Abdullah Mamun and M. Lachab and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Asif Khan

119 papers receiving 3.0k citations

Hit Papers

Ultraviolet light-emitting diodes based on group three ni... 2008 2026 2014 2020 2008 250 500 750
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Ultraviolet light-emitting diodes based on group three nitrides
    2008 866 citations Asif Khan et al. profile →

Peers

Asif Khan
Seiji Mita United States
M. Kunzer Germany
Feng Yun China
M. A. Moram United Kingdom
A. N. Smirnov Russia
Tim Wernicke Germany
Daniel Feezell United States
M. Shatalov United States
Ü. Özgür United States
Yuji Zhao United States
Seiji Mita United States
Asif Khan
Citations per year, relative to Asif Khan Asif Khan (= 1×) peers Seiji Mita

Countries citing papers authored by Asif Khan

Since Specialization
Citations

This map shows the geographic impact of Asif Khan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Asif Khan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Asif Khan more than expected).

Fields of papers citing papers by Asif Khan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Asif Khan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Asif Khan. The network helps show where Asif Khan may publish in the future.

Co-authorship network of co-authors of Asif Khan

This figure shows the co-authorship network connecting the top 25 collaborators of Asif Khan. A scholar is included among the top collaborators of Asif Khan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Asif Khan. Asif Khan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Mamun, Abdullah, Kenneth Stephenson, Kamal Hussain, et al.. (2025). Extreme Bandgap Recessed‐Gate Metal Oxide Semiconductor Heterostructure Field Effect Transistors with Drain Current 0.28 A mm −1 and Threshold Voltage −1.5 V. physica status solidi (a). 222(23). 2 indexed citations
3.
Asel, Thaddeus J., et al.. (2025). The impact of device architecture on the thermal response of AlN/AlGaN digital alloy field-effect transistors. Applied Thermal Engineering. 276. 126677–126677.
4.
Khan, Asif, et al.. (2025). High-Frequency (fT30 GHz) High Breakdown (>300 V) Al₀.₆₂Ga₀.₃₈N Channel HEMT. IEEE Transactions on Electron Devices. 72(9). 4752–4756. 2 indexed citations
5.
Hoglund, Eric R., Kamal Hussain, De‐Liang Bao, et al.. (2024). Nonequivalent Atomic Vibrations at Interfaces in a Polar Superlattice (Adv. Mater. 33/2024). Advanced Materials. 36(33). 1 indexed citations
6.
Stephenson, Kenneth, et al.. (2024). Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 V. 1–2. 3 indexed citations
7.
Matthews, Christopher M., Habib Ahmad, Kamal Hussain, et al.. (2024). Cathodoluminescence investigation of defect states in n- and p-type AlN. Applied Physics Letters. 124(5). 4 indexed citations
8.
Hoglund, Eric R., Kamal Hussain, De‐Liang Bao, et al.. (2024). Nonequivalent Atomic Vibrations at Interfaces in a Polar Superlattice. Advanced Materials. 36(33). e2402925–e2402925. 6 indexed citations
9.
Khan, Asif, Michael Kneissl, & Hiroshi Amano. (2023). UV/DUV light emitters. Applied Physics Letters. 123(12). 7 indexed citations
10.
Hussain, Kamal, Abdullah Mamun, Michael E. Liao, et al.. (2023). High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates. Applied Physics Express. 16(1). 14005–14005. 21 indexed citations
11.
12.
Hussain, Kamal, Abdullah Mamun, Mikhail Gaevski, et al.. (2020). An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices. physica status solidi (a). 217(7). 6 indexed citations
13.
Gaevski, Mikhail, Kamal Hussain, Abdullah Mamun, et al.. (2020). Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs. Applied Physics Letters. 117(23). 9 indexed citations
14.
Cheng, Zhe, Yee Rui Koh, Abdullah Mamun, et al.. (2020). Experimental observation of high intrinsic thermal conductivity of AlN. Physical Review Materials. 4(4). 121 indexed citations
15.
Hussain, Kamal, Abdullah Mamun, Mikhail Gaevski, et al.. (2020). High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V. Applied Physics Express. 14(1). 14003–14003. 10 indexed citations
16.
17.
Chava, Venkata S. N., et al.. (2017). High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor. Applied Physics Letters. 111(24). 19 indexed citations
18.
Khan, Asif, et al.. (2015). A STUDY ON GROWTH PERFORMANCE AND SURVIVAL OF INDUS GOLDEN MAHSEER (TOR MACROLEPIS) WITH INDIAN MAJOR CARPS IN SEMI-INTENSIVE POLYCULTURE SYSTEM. The Journal of Animal and Plant Sciences. 25(2). 561–566. 3 indexed citations
19.
Lachab, M., et al.. (2014). Transport properties of SiO2/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate. Journal of Physics D Applied Physics. 47(13). 135108–135108. 19 indexed citations
20.
Lunev, A. V., X. Hu, Jianyu Deng, et al.. (2005). 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes. Japanese Journal of Applied Physics. 44(1). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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