Sarah K. Haney

802 citations

19 papers · 666 indexed · h-index 11

Co-authors: Anant Agarwal Sei‐Hyung Ryu Fatima Husna Sarit Dhar Mrinal K. Das Aivars J. Lelis Kin P. Cheung Lin Cheng
Topics: Silicon Carbide Semiconductor Technologies (19 papers)Semiconductor materials and devices (15 papers)Copper Interconnects and Reliability (4 papers)
Cited by: Electrical and Electronic Engineering Ceramics and Composites Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters Journal of Applied Physics IEEE Electron Device Letters
Partner nations: United States China

In The Last Decade

Sarah K. Haney

19 papers receiving 643 citations

Peers

Countries citing papers authored by Sarah K. Haney

Since Specialization

Citations

This map shows the geographic impact of Sarah K. Haney's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sarah K. Haney with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sarah K. Haney more than expected).

Fields of papers citing papers by Sarah K. Haney

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sarah K. Haney. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sarah K. Haney. The network helps show where Sarah K. Haney may publish in the future.

Co-authorship network of co-authors of Sarah K. Haney

This figure shows the co-authorship network connecting the top 25 collaborators of Sarah K. Haney. A scholar is included among the top collaborators of Sarah K. Haney based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sarah K. Haney. Sarah K. Haney is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

#	Work	Indexed citations
1	Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs 2013 ·Materials science forum ·Sarah K. Haney,Veena Misra,Daniel J. Lichtenwalner,Anant Agarwal	3
2	Investigation of Low Temperature, Atomic-Layer-Deposited Oxides on 4H-SiC and their Effect on the SiC/SiO2 Interface 2012 ·NCSU Libraries Repository (North Carolina State University Libraries) ·Sarah K. Haney	4
3	SiC MOSFET Reliability Update 2012 ·Materials science forum ·Mrinal K. Das,Sarah K. Haney,Jim Richmond,(unknown),(unknown),(unknown)	36
4	Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors 2010 ·Journal of Applied Physics ·Sarit Dhar,Sarah K. Haney,Lin Cheng,(unknown),Anant Agarwal,(unknown),Kin P. Cheung	99
5	Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current 2010 ·Journal of Electronic Materials ·Marko J. Tadjer,Robert E. Stahlbush,Karl D. Hobart,P. J. McMarr,H.L. Hughes,Eugene A. Imhoff,Fritz J. Kub,Sarah K. Haney,Anant Agarwal	5
6	4H-SiC DMOSFETs for power conversion applications successes and ongoing challenges 2010 ·(unknown),Jincai Zhang,Mrinal K. Das,Sei‐Hyung Ryu,Charlotte Jonas,Sarit Dhar,Sarah K. Haney,Robert Callanan,Jim Richmond	2
7	Critical Issues for MOS Based Power Devices in 4H-SiC 2009 ·Materials science forum ·Sei‐Hyung Ryu,Sarit Dhar,Sarah K. Haney,Anant Agarwal,Aivars J. Lelis,Bruce Geil,Charles Scozzie	37
8	Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility 2009 ·Applied Physics Letters ·(unknown),C. L. Reynolds,Tsvetanka Zheleva,Aivars J. Lelis,Daniel B. Habersat,Sarah K. Haney,Sei‐Hyung Ryu,Anant Agarwal,Gerd Duscher	73
9	Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs 2008 ·MRS Proceedings ·Sarah K. Haney,Sei‐Hyung Ryu,Sarit Dhar,Anant Agarwal,Mark A. Johnson	2
10	Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs 2008 ·Materials science forum ·Sei‐Hyung Ryu,Fatima Husna,Sarah K. Haney,(unknown),Robert E. Stahlbush,Anant Agarwal	13
11	Critical Technical Issues in High Voltage SiC Power Devices 2008 ·Materials science forum ·Anant Agarwal,Albert A. Burk,Robert Callanan,Craig Capell,Mrinal K. Das,Sarah K. Haney,Brett Hull,Charlotte Jonas,Michael O’Loughlin,(unknown),John W. Palmour,Adrian R. Powell,Jim Richmond,Sei‐Hyung Ryu,Robert E. Stahlbush,Joseph J. Sumakeris,(unknown)	20
12	Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations 2008 ·MRS Proceedings ·Sei‐Hyung Ryu,Qingchun Zhang,Fatima Husna,Sarah K. Haney,Robert E. Stahlbush,Anant Agarwal	6
13	A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching 2008 ·Materials science forum ·Mrinal K. Das,(unknown),Robert Callanan,Craig Capell,(unknown),(unknown),Sarah K. Haney,Fatima Husna,Charlotte Jonas,Jim Richmond,Joseph J. Sumakeris	47
14	Status of 1200V 4H-SiC Power DMOSFETs 2007 ·(unknown),Fatima Husna,Anant Agarwal,Aivars J. Lelis,Bruce Geil,Charles Scozzie,Mrinal K. Das,Sei‐Hyung Ryu,Sarah K. Haney,Charlotte Jonas,Craig Capell,(unknown),(unknown),Robert Callanan	10
15	The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs 2007 ·Journal of Electronic Materials ·Sarah K. Haney,Anant Agarwal	19
16	A New Degradation Mechanism in High-Voltage SiC Power MOSFETs 2007 ·IEEE Electron Device Letters ·Anant Agarwal,Fatima Husna,Sarah K. Haney,Sei‐Hyung Ryu	231
17	Some Critical Materials and Processing Issues in SiC Power Devices 2007 ·Journal of Electronic Materials ·Anant Agarwal,Sarah K. Haney	37
18	Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices 2007 ·Materials science forum ·Mrinal K. Das,Sarah K. Haney,Charlotte Jonas,(unknown),Sei‐Hyung Ryu	12
19	Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal 2006 ·Materials science forum ·Mrinal K. Das,Brett Hull,Sumi Krishnaswami,Fatima Husna,Sarah K. Haney,Aivars J. Lelis,Charles Scozzie,James D. Scofield	10

About Sarah K. Haney

Sarah K. Haney is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 19 papers that have together received 666 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (19 papers), Semiconductor materials and devices (15 papers) and Copper Interconnects and Reliability (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (655 citations), Ceramics and Composites (24 citations) and Electronic, Optical and Magnetic Materials (66 citations). Sarah K. Haney has collaborated with scholars based in United States and China. Frequent co-authors include Anant Agarwal, Sei‐Hyung Ryu, Fatima Husna, Sarit Dhar, Mrinal K. Das, Aivars J. Lelis, Kin P. Cheung, Lin Cheng, Jim Richmond and Charlotte Jonas. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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