Sarah K. Haney

802 total citations
19 papers, 666 citations indexed

About

Sarah K. Haney is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Sarah K. Haney has authored 19 papers receiving a total of 666 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 4 papers in Electronic, Optical and Magnetic Materials and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Sarah K. Haney's work include Silicon Carbide Semiconductor Technologies (19 papers), Semiconductor materials and devices (15 papers) and Copper Interconnects and Reliability (4 papers). Sarah K. Haney is often cited by papers focused on Silicon Carbide Semiconductor Technologies (19 papers), Semiconductor materials and devices (15 papers) and Copper Interconnects and Reliability (4 papers). Sarah K. Haney collaborates with scholars based in United States and China. Sarah K. Haney's co-authors include Anant Agarwal, Sei‐Hyung Ryu, Fatima Husna, Sarit Dhar, Mrinal K. Das, Aivars J. Lelis, Kin P. Cheung, Lin Cheng, Jim Richmond and Charlotte Jonas and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Sarah K. Haney

19 papers receiving 643 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Sarah K. Haney United States	11	655	99	66	24	22	19	666
Fanny Dahlquist Sweden	9	525 0.8×	153 1.5×	80 1.2×	29 1.2×	16 0.7×	11	529
Toru Hiyoshi Japan	12	657 1.0×	143 1.4×	76 1.2×	25 1.0×	25 1.1×	18	661
Keiko Fujihira Japan	11	349 0.5×	74 0.7×	66 1.0×	18 0.8×	30 1.4×	24	358
Tsutomu Yatsuo Japan	15	702 1.1×	111 1.1×	85 1.3×	17 0.7×	27 1.2×	77	715
Alexander Bolotnikov United States	14	442 0.7×	64 0.6×	40 0.6×	10 0.4×	27 1.2×	36	471
V. Khemka United States	15	676 1.0×	141 1.4×	47 0.7×	14 0.6×	40 1.8×	54	691
K. Rottner Sweden	10	399 0.6×	114 1.2×	52 0.8×	28 1.2×	51 2.3×	25	409
D. Alok United States	13	580 0.9×	202 2.0×	56 0.8×	30 1.3×	41 1.9×	27	594
Michael Treu Austria	13	534 0.8×	116 1.2×	62 0.9×	20 0.8×	28 1.3×	24	556
Luigia Lanni Sweden	15	538 0.8×	65 0.7×	59 0.9×	19 0.8×	48 2.2×	33	568

Countries citing papers authored by Sarah K. Haney

Since Specialization

Citations

This map shows the geographic impact of Sarah K. Haney's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sarah K. Haney with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sarah K. Haney more than expected).

Fields of papers citing papers by Sarah K. Haney

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sarah K. Haney. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sarah K. Haney. The network helps show where Sarah K. Haney may publish in the future.

Co-authorship network of co-authors of Sarah K. Haney

This figure shows the co-authorship network connecting the top 25 collaborators of Sarah K. Haney. A scholar is included among the top collaborators of Sarah K. Haney based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sarah K. Haney. Sarah K. Haney is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Haney, Sarah K., Veena Misra, Daniel J. Lichtenwalner, & Anant Agarwal. (2013). Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs. Materials science forum. 740-742. 707–710. 3 indexed citations

Haney, Sarah K.. (2012). Investigation of Low Temperature, Atomic-Layer-Deposited Oxides on 4H-SiC and their Effect on the SiC/SiO2 Interface. NCSU Libraries Repository (North Carolina State University Libraries). 4 indexed citations

Das, Mrinal K., et al.. (2012). SiC MOSFET Reliability Update. Materials science forum. 717-720. 1073–1076. 36 indexed citations

Dhar, Sarit, et al.. (2010). Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics. 108(5). 99 indexed citations

Tadjer, Marko J., Robert E. Stahlbush, Karl D. Hobart, et al.. (2010). Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current. Journal of Electronic Materials. 39(5). 517–525. 5 indexed citations

Zhang, Jincai, Mrinal K. Das, Sei‐Hyung Ryu, et al.. (2010). 4H-SiC DMOSFETs for power conversion applications successes and ongoing challenges. 197–200. 2 indexed citations

Ryu, Sei‐Hyung, Sarit Dhar, Sarah K. Haney, et al.. (2009). Critical Issues for MOS Based Power Devices in 4H-SiC. Materials science forum. 615-617. 743–748. 37 indexed citations

Reynolds, C. L., Tsvetanka Zheleva, Aivars J. Lelis, et al.. (2009). Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility. Applied Physics Letters. 95(3). 32108–32108. 73 indexed citations

Haney, Sarah K., Sei‐Hyung Ryu, Sarit Dhar, Anant Agarwal, & Mark A. Johnson. (2008). Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs. MRS Proceedings. 1069. 2 indexed citations

10.

Ryu, Sei‐Hyung, et al.. (2008). Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs. Materials science forum. 600-603. 1127–1130. 13 indexed citations

11.

Ryu, Sei‐Hyung, Qingchun Zhang, Fatima Husna, et al.. (2008). Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations. MRS Proceedings. 1069. 6 indexed citations

12.

Agarwal, Anant, Albert A. Burk, Robert Callanan, et al.. (2008). Critical Technical Issues in High Voltage SiC Power Devices. Materials science forum. 600-603. 895–900. 20 indexed citations

13.

Das, Mrinal K., Robert Callanan, Craig Capell, et al.. (2008). A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching. Materials science forum. 600-603. 1183–1186. 47 indexed citations

14.

Husna, Fatima, Anant Agarwal, Aivars J. Lelis, et al.. (2007). Status of 1200V 4H-SiC Power DMOSFETs. 457 460. 1–2. 10 indexed citations

15.

Haney, Sarah K. & Anant Agarwal. (2007). The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs. Journal of Electronic Materials. 37(5). 666–671. 19 indexed citations

16.

Agarwal, Anant & Sarah K. Haney. (2007). Some Critical Materials and Processing Issues in SiC Power Devices. Journal of Electronic Materials. 37(5). 646–654. 37 indexed citations

17.

Agarwal, Anant, Fatima Husna, Sarah K. Haney, & Sei‐Hyung Ryu. (2007). A New Degradation Mechanism in High-Voltage SiC Power MOSFETs. IEEE Electron Device Letters. 28(7). 587–589. 231 indexed citations

18.

Das, Mrinal K., et al.. (2007). Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices. Materials science forum. 556-557. 667–670. 12 indexed citations

19.

Das, Mrinal K., Brett Hull, Sumi Krishnaswami, et al.. (2006). Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal. Materials science forum. 527-529. 967–970. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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