J. Yang

738 total citations
14 papers, 590 citations indexed

About

J. Yang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Mechanics of Materials. According to data from OpenAlex, J. Yang has authored 14 papers receiving a total of 590 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 3 papers in Condensed Matter Physics and 3 papers in Mechanics of Materials. Recurrent topics in J. Yang's work include Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor materials and devices (8 papers) and GaN-based semiconductor devices and materials (3 papers). J. Yang is often cited by papers focused on Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor materials and devices (8 papers) and GaN-based semiconductor devices and materials (3 papers). J. Yang collaborates with scholars based in United States and Japan. J. Yang's co-authors include P. Pirouz, J. A. Powell, L. G. Matus, W. J. Choyke, M. Yoganathan, L. L. Clemen, I. G. Jenkins, James H. Edgar, J. B. Petit and John L. Bradshaw and has published in prestigious journals such as Applied Physics Letters, Journal of materials research/Pratt's guide to venture capital sources and Ultramicroscopy.

In The Last Decade

J. Yang

13 papers receiving 579 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Yang United States	10	487	125	122	107	98	14	590
M. Yoganathan United States	14	546 1.1×	165 1.3×	60 0.5×	112 1.0×	170 1.7×	40	735
I. G. Jenkins United States	8	257 0.5×	192 1.5×	36 0.3×	55 0.5×	303 3.1×	11	497
J. B. Petit United States	7	252 0.5×	61 0.5×	34 0.3×	71 0.7×	50 0.5×	12	313
Ming‐Hung Weng Taiwan	11	476 1.0×	104 0.8×	95 0.8×	58 0.5×	327 3.3×	30	538
Douglas du Boulay Japan	11	176 0.4×	137 1.1×	36 0.3×	61 0.6×	216 2.2×	26	413
Alcione Roberto Jurelo Brazil	14	80 0.2×	180 1.4×	45 0.4×	86 0.8×	161 1.6×	73	656
Robert Ranson United Kingdom	12	221 0.5×	63 0.5×	12 0.1×	26 0.2×	282 2.9×	19	415
Y. G. Wang China	10	204 0.4×	336 2.7×	39 0.3×	75 0.7×	794 8.1×	21	874
Jian Kang China	14	420 0.9×	35 0.3×	162 1.3×	88 0.8×	555 5.7×	47	644
Yuji Fujiwara Japan	11	171 0.4×	308 2.5×	6 0.0×	441 4.1×	240 2.4×	86	724

Countries citing papers authored by J. Yang

Since Specialization

Citations

This map shows the geographic impact of J. Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Yang more than expected).

Fields of papers citing papers by J. Yang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Yang. The network helps show where J. Yang may publish in the future.

Co-authorship network of co-authors of J. Yang

This figure shows the co-authorship network connecting the top 25 collaborators of J. Yang. A scholar is included among the top collaborators of J. Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Yang. J. Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Simin, G., Zijiang Yang, A. Koudymov, et al.. (2006). III-nitride transistors with capacitively coupled contacts. Applied Physics Letters. 89(3). 13 indexed citations

Husna, Fatima, Xiaomeng He, A. Koudymov, et al.. (2005). Performance stability of high‐power III‐nitride metal‐oxide semiconductor‐heterostructure field‐effect transistors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2651–2654. 3 indexed citations

Gaška, R., et al.. (1998). Bulk Breakdown in AlGaN/GaN HFETs. MRS Proceedings. 512.

Pirouz, P., Ke An, X. J. Ning, J. Yang, & S.Q. Xiao. (1995). High-Temperature Indentation of Natural Diamond and the Quest for Lonsdaleite. MRS Proceedings. 383. 1 indexed citations

Stan, M.A., et al.. (1994). Growth of 2H-SiC on 6H-SiC by pulsed laser ablation. Applied Physics Letters. 64(20). 2667–2669. 23 indexed citations

Pirouz, P. & J. Yang. (1993). Polytypic transformations in SiC: the role of TEM. Ultramicroscopy. 51(1-4). 189–214. 165 indexed citations

Yang, J. & P. Pirouz. (1993). The α → β polytypic transformation in high-temperature indented SiC. Journal of materials research/Pratt's guide to venture capital sources. 8(11). 2902–2907. 33 indexed citations

Yang, J., Tetsuya Suzuki, P. Pirouz, J. A. Powell, & T. Iseki. (1992). Stress-Induced Polytypic Transformation in Sic. MRS Proceedings. 242. 9 indexed citations

Powell, J. A., J. B. Petit, James H. Edgar, et al.. (1991). Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers. Applied Physics Letters. 59(3). 333–335. 106 indexed citations

10.

Powell, J. A., J. B. Petit, James H. Edgar, et al.. (1991). Application of oxidation to the structural characterization of SiC epitaxial films. Applied Physics Letters. 59(2). 183–185. 78 indexed citations

11.

Powell, J. A., David Larkin, L. G. Matus, et al.. (1990). Growth of improved quality 3C-SiC films on 6H-SiC substrates. Applied Physics Letters. 56(14). 1353–1355. 45 indexed citations

12.

Pirouz, P. & J. Yang. (1990). Anti-Site Bonds and the Structure of Interfaces in SiC. MRS Proceedings. 183. 13 indexed citations

13.

Powell, J. A., David Larkin, L. G. Matus, et al.. (1990). Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers. Applied Physics Letters. 56(15). 1442–1444. 100 indexed citations

14.

Pirouz, P., J. Yang, F. Ernst, & Heinrich Möller. (1989). Hexagotnal Silicon: A New Hrem Study. MRS Proceedings. 139. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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