Paul L. Voss

3.6k total citations
130 papers, 2.7k citations indexed

About

Paul L. Voss is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Paul L. Voss has authored 130 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 64 papers in Condensed Matter Physics, 63 papers in Electrical and Electronic Engineering and 42 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Paul L. Voss's work include GaN-based semiconductor devices and materials (64 papers), Ga2O3 and related materials (32 papers) and Quantum Information and Cryptography (19 papers). Paul L. Voss is often cited by papers focused on GaN-based semiconductor devices and materials (64 papers), Ga2O3 and related materials (32 papers) and Quantum Information and Cryptography (19 papers). Paul L. Voss collaborates with scholars based in United States, France and Germany. Paul L. Voss's co-authors include Prem Kumar, Jay E. Sharping, Xiaoying Li, Jean‐Paul Salvestrini, A. Ougazzaden, Suresh Sundaram, G. Patriarche, Youssef El Gmili, Marco Fiorentino and Taha Ayari and has published in prestigious journals such as Physical Review Letters, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

Paul L. Voss

124 papers receiving 2.6k citations

Peers

Countries citing papers authored by Paul L. Voss

Since Specialization

Citations

This map shows the geographic impact of Paul L. Voss's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Paul L. Voss with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Paul L. Voss more than expected).

Fields of papers citing papers by Paul L. Voss

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Paul L. Voss. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Paul L. Voss. The network helps show where Paul L. Voss may publish in the future.

Co-authorship network of co-authors of Paul L. Voss

This figure shows the co-authorship network connecting the top 25 collaborators of Paul L. Voss. A scholar is included among the top collaborators of Paul L. Voss based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Paul L. Voss. Paul L. Voss is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer 2024 ·SHILAP Revista de lepidopterología ·(unknown), (unknown), Phuong Vuong, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), G. Patriarche, Paul L. Voss, Suresh Sundaram, Jean‐Paul Salvestrini, A. Ougazzaden	2
2	Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study 2024 ·Materials Science and Engineering B ·(unknown), Mustapha Faqir, Paul L. Voss, Jean‐Paul Salvestrini, A. Ougazzaden	5
3	Hydrogen Confinement in Hexagonal Boron Nitride Bubbles Using UV Laser Illumination 2024 ·Small ·(unknown), (unknown), (unknown), (unknown), (unknown), Phuong Vuong, Suresh Sundaram, Mustapha Faqir, Paul L. Voss, Jean‐Paul Salvestrini, (unknown)	1
4	Design and fabrication process flow for high-efficiency and flexible InGaN solar cells 2023 ·Micro and Nanostructures ·(unknown), (unknown), (unknown), Suresh Sundaram, Paul L. Voss, E. Monroy, Jean‐Paul Salvestrini, A. Ougazzaden	8
5	Recent advances in InGaN nanowires for hydrogen production using photoelectrochemical water splitting 2023 ·Materials Today Energy ·(unknown), Paul L. Voss, Mustapha Faqir	17
6	Photoinduced doping in hexagonal boron nitride 2023 ·Applied Physics Letters ·(unknown), (unknown), (unknown), Phuong Vuong, (unknown), Paul L. Voss, Suresh Sundaram, Jean‐Paul Salvestrini, A. Ougazzaden	5
7	An analytical model to calculate the current–voltage characteristics of AlGaN/GaN HEMTs 2022 ·Journal of Computational Electronics ·(unknown), Mustapha Faqir, Paul L. Voss, (unknown), E. Essadiqi	4
8	Natural Boron and ¹⁰B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors 2021 ·ACS Omega ·(unknown), Ali Ahaitouf, Suresh Sundaram, (unknown), (unknown), (unknown), Phuong Vuong, (unknown), Mritunjay Kumar, Xiaohang Li, Yacine Halfaya, S. Gautier, Paul L. Voss, Jean‐Paul Salvestrini, A. Ougazzaden	13
9	Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN 2020 ·ACS Applied Materials & Interfaces ·Phuong Vuong, Suresh Sundaram, (unknown), G. Patriarche, Stefano Leone, Fouad Benkhelifa, (unknown), (unknown), S. Gautier, Paul L. Voss, Jean‐Paul Salvestrini, A. Ougazzaden	21
10	MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates 2018 ·Journal of Crystal Growth ·Suresh Sundaram, (unknown), (unknown), Taha Ayari, Yacine Halfaya, G. Patriarche, Paul L. Voss, Jean‐Paul Salvestrini, A. Ougazzaden	10
11	Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission 2017 ·physica status solidi (a) ·(unknown), Suresh Sundaram, Xin Li, (unknown), Youssef El Gmili, I. C. Robin, Paul L. Voss, Jean‐Paul Salvestrini, A. Ougazzaden	5
12	Modeling, design, fabrication and experimentation of a GaN-based,⁶³Ni betavoltaic battery 2017 ·Journal of Physics D Applied Physics ·(unknown), (unknown), K. Merghem, Suresh Sundaram, David J. Rogers, J. de Sanoit, Paul L. Voss, A. Ramdane, Jean‐Paul Salvestrini, A. Ougazzaden	28
13	Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates 2017 ·Optical Materials Express ·Youssef El Gmili, (unknown), Suresh Sundaram, Xiaojian Li, (unknown), G. Patriarche, Cédric Pradalier, J. Décobert, Paul L. Voss, Jean‐Paul Salvestrini, A. Ougazzaden	4
14	Experimental Study and Device Design of NO, NO₂, and NH₃Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT 2016 ·IEEE Sensors Journal ·(unknown), Yacine Halfaya, A. Soltani, Suresh Sundaram, Xin Li, Jérémy Streque, Youssef El Gmili, Paul L. Voss, Jean‐Paul Salvestrini, A. Ougazzaden	42
15	Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask 2016 ·Applied Physics Letters ·(unknown), G. Patriarche, (unknown), Suresh Sundaram, Youssef El Gmili, Jean‐Paul Salvestrini, Paul L. Voss, Walt A. de Heer, Claire Berger, A. Ougazzaden	20
16	Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates 2016 ·Nanotechnology ·Suresh Sundaram, (unknown), Youssef El Gmili, (unknown), (unknown), Cédric Pradalier, Konstantinos Pantzas, G. Patriarche, Paul L. Voss, Jean‐Paul Salvestrini, A. Ougazzaden	2
17	Investigation of new approaches for InGaN growth with high indium content for CPV application 2015 ·AIP conference proceedings ·Muhammad Arif, Suresh Sundaram, Jérémy Streque, Youssef El Gmili, (unknown), Sofiane Belahsene, A. Ramdane, Anthony Martinez, G. Patriarche, Thomas Fix, A. Slaoui, Paul L. Voss, Jean‐Paul Salvestrini, A. Ougazzaden	1
18	Local tuning of graphene thickness on 4H-SiC C-face using decomposing silicon nitride masks 2013 ·arXiv (Cornell University) ·(unknown), John Hankinson, A. Ougazzaden, Paul L. Voss, Claire Berger, Walt A. de Heer	0
19	A 24 km fiber-based discretely signaled continuous variable quantum key distribution system 2009 ·Optics Express ·Xuan Quyen Dinh, Zheshen Zhang, Paul L. Voss	59
20	Optical-Fiber Source of Polarization-Entangled Photons in the 1550 nm Telecom Band 2005 ·Physical Review Letters ·Xiaoying Li, Paul L. Voss, Jay E. Sharping, Prem Kumar	312

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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