Chunlei Wu

949 citations

39 papers · 641 indexed · h-index 14

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 33
- Advancements in Semiconductor Devices and Circuit Design 27
- Integrated Circuits and Semiconductor Failure Analysis 9
- Ferroelectric and Negative Capacitance Devices 9
- Silicon Carbide Semiconductor Technologies 7
Condensed Matter Physics
- GaN-based semiconductor devices and materials 4
Biomedical Engineering
- Nanowire Synthesis and Applications 4
- Acoustic Wave Resonator Technologies 3
Electronic, Optical and Magnetic Materials
Materials Chemistry

Co-authors: Ru Huang Qianqian Huang Yangyuan Wang Jiaxin WangCheng ChenZhan ZhanChao WangWenzhe Jiang
Cited by: Electrical and Electronic Engineering Condensed Matter Physics Biomedical Engineering
Journals: Journal of Applied Physics (2 papers)IEEE Access (1 paper)IEEE Transactions on Electron Devices (4 papers)
Partner nations: China United States Türkiye

In The Last Decade

Chunlei Wu

36 papers receiving 618 citations

Peers

Countries citing papers authored by Chunlei Wu

Since Specialization

Citations

This map shows the geographic impact of Chunlei Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chunlei Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chunlei Wu more than expected).

Fields of papers citing papers by Chunlei Wu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chunlei Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chunlei Wu. The network helps show where Chunlei Wu may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Chunlei Wu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Chunlei Wu Line = papers co-authored together Chunlei Wu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Novel Hybrid-Channel Gate-All-Around Nanosheet Transistor for Leakage Control and Subthreshold Slope Reduction Yumin Xu,Chunlei Wu,Boqian Shen,Fei Zhao,Hanzhi Gu,Jian Ma,Dawei Wang,Tao Liu,David Wei Zhang	2024	0
2	A Buried Thermal Rail (BTR) Technology to Improve Electrothermal Characteristics of Complementary Field-Effect Transistor (CFET) Micromachines ·Zhecheng Pan,Tao Liu,Jingwen Yang,Kun Chen,Saisheng Xu,Chunlei Wu,Min Xu,David Wei Zhang	2023	2
3	Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node Electronics ·Dawei Wang,Xin Sun,Tao Liu,Kun Chen,Jingwen Yang,Chunlei Wu,Min Xu,Wei Zhang	2023	13
4	A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors Micromachines ·Jingwen Yang,Ziqiang Huang,Dawei Wang,Tao Liu,Xin Sun,Lewen Qian,Zhecheng Pan,Saisheng Xu,Chen Wang,Chunlei Wu,Min Xu,David Wei Zhang	2023	5
5	Strained Si Nanosheet pFET Based on SiC Strain Relaxed Buffer Layer for High Performance and Low Power Logic Applications IEEE Access ·Kun Chen,Jingwen Yang,Chunlei Wu,Chen Wang,Min Xu,David Wei Zhang	2023	1
6	Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device Micromachines ·Jingwen Yang,Kun Chen,Dawei Wang,Tao Liu,Xin Sun,Qiang Wang,Ziqiang Huang,Zhecheng Pan,Saisheng Xu,Chen Wang,Chunlei Wu,Min Xu,David Wei Zhang	2023	5
7	A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation Nanomaterials ·Xin Sun,Dawei Wang,Lewen Qian,Tao Liu,Jingwen Yang,Kun Chen,Luyu Wang,Ziqiang Huang,Min Xu,Chen Wang,Chunlei Wu,Saisheng Xu,David Wei Zhang	2023	9
8	Ferroelectric-Gated GaN HEMTs for RF and mm-Wave Switch Applications Hansheng Ye,Chunlei Wu,Nivedhita Venkatesan,Jingshan Wang,Yu Cao,Andy Xie,Edward Beam,Patrick Fay	2022	6
9	Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors Jingwen Yang,Kun Chen,Xin Sun,Dawei Wang,Qiang Wang,Tao Liu,Ziqiang Huang,Zhecheng Pan,Saisheng Xu,Chunlei Wu,Min Xu,David Wei Zhang	2022	1
10	High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application Micromachines ·Penghao Zhang,Luyu Wang,Kaiyue Zhu,Yannan Yang,Rong Fan,Maolin Pan,Saisheng Xu,Min Xu,Chen Wang,Chunlei Wu,David Zhang	2022	16
11	Study of Synthetic Electric Field Effects and Quantum Confinement Effects in Extremely Scaled Gate-All-Around Tunnel FET Yumin Xu,Boqian Shen,Dawei Wang,Tao Liu,Jingwen Yang,Kun Chen,Zhecheng Pan,Chunlei Wu,Min Xu,David Wei Zhang	2022	4
12	Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets Micromachines ·Kun Chen,Jingwen Yang,Tao Liu,Dawei Wang,Min Xu,Chunlei Wu,Chen Wang,Saisheng Xu,David Wei Zhang,Wenchao Liu	2022	2
13	Novel Postgate Single Diffusion Break Integration in Gate-All-Around Nanosheet Transistors to Achieve Remarkable Channel Stress for N/P Current Matching IEEE Transactions on Electron Devices ·Tao Liu,Dawei Wang,Zhecheng Pan,Kun Chen,Jingwen Yang,Chunlei Wu,Saisheng Xu,Chen Wang,Min Xu,David Wei Zhang	2022	8
14	Hf_0.5Zr_0.5O₂-Based Ferroelectric Gate HEMTs With Large Threshold Voltage Tuning Range IEEE Electron Device Letters ·Chunlei Wu,Hansheng Ye,Nikhita Shaju,J. A. Smith,Benjamin Grisafe,Suman Datta,Patrick Fay	2020	40
15	A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High $\text{I}_{\mathrm {ON}}/\text{I}_{\mathrm {OFF}}$ Ratio IEEE Electron Device Letters ·Yang Zhao,Chunlei Wu,Qianqian Huang,Cheng Chen,Jiadi Zhu,Lingyi Guo,Rundong Jia,Zhu Lv,Yuchao Yang,Ming Li,Ru Huang	2017	42
16	Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High ${I} _{\scriptscriptstyle\text {ON}}/{I} _{\scriptscriptstyle\text {OFF}}$ Ratio and Steep Swing IEEE Electron Device Letters ·Jiadi Zhu,Yang Zhao,Qianqian Huang,Cheng Chen,Chunlei Wu,Rundong Jia,Ru Huang	2017	30
17	High performance tunnel field-effect transistor by gate and source engineering Nanotechnology ·Ru Huang,Qianqian Huang,Shaowen Chen,Chunlei Wu,Jiaxin Wang,Xia An,Yangyuan Wang	2014	14
18	Influence of NixMn1−x thickness and composition on the Curie temperature of Ni in NixMn1−x/Ni bilayers on Cu3Au(001) Journal of Magnetism and Magnetic Materials ·Mustafa Erkovan,Yasser A. Shokr,D. Schiestl,Chunlei Wu,W. Kuch	2014	6
19	A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration Qianqian Huang,Ru Huang,Zhan Zhan,Yingxin Qiu,Wenzhe Jiang,Chunlei Wu,Yangyuan Wang	2012	109
20	Transverse Dimensions of Wood Pulp Fibres and Their Implications for End Use R. S. Seth,Hoon Jang,B. K. Chan,Chunlei Wu	1997	2

About Chunlei Wu

Chunlei Wu is a scholar working on Architecture, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 39 papers that have together received 641 indexed citations. Recurring topics across this work include Semiconductor materials and devices (33 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Silicon Carbide Semiconductor Technologies (7 papers), Nanowire Synthesis and Applications (4 papers), GaN-based semiconductor devices and materials (4 papers) and Acoustic Wave Resonator Technologies (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (601 citations), Condensed Matter Physics (58 citations) and Biomedical Engineering (155 citations). Chunlei Wu has collaborated with scholars based in China, United States and Türkiye. Frequent co-authors include Ru Huang, Qianqian Huang, Yangyuan Wang, Jiaxin Wang, Cheng Chen, Zhan Zhan, Chao Wang, Wenzhe Jiang, Rundong Jia and Patrick Fay. Their work appears in journals such as Journal of Applied Physics, IEEE Access and IEEE Transactions on Electron Devices.

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