B. Brar

1.5k total citations
53 papers, 1.2k citations indexed

About

B. Brar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B. Brar has authored 53 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 30 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in B. Brar's work include Semiconductor Quantum Structures and Devices (28 papers), Radio Frequency Integrated Circuit Design (21 papers) and Semiconductor materials and devices (18 papers). B. Brar is often cited by papers focused on Semiconductor Quantum Structures and Devices (28 papers), Radio Frequency Integrated Circuit Design (21 papers) and Semiconductor materials and devices (18 papers). B. Brar collaborates with scholars based in United States, Germany and France. B. Brar's co-authors include G. D. Wilk, Alan Seabaugh, T.P.E. Broekaert, Gary Frazier, Frank Morris, G. Nagy, Edward Beam, Robert M. Wallace, Sing-Pin Tay and Zhaoming Lu and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. Brar

53 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B. Brar United States	18	999	641	203	120	113	53	1.2k
D. T. McInturff United States	16	772 0.8×	842 1.3×	196 1.0×	207 1.7×	110 1.0×	42	1.0k
M. R. Melloch United States	19	782 0.8×	802 1.3×	291 1.4×	106 0.9×	198 1.8×	65	1.1k
A. J. SpringThorpe Canada	19	784 0.8×	785 1.2×	259 1.3×	126 1.1×	78 0.7×	81	1.1k
M. Gao Canada	13	657 0.7×	533 0.8×	201 1.0×	39 0.3×	106 0.9×	37	770
J. F. Klem United States	22	1.0k 1.0×	1.1k 1.8×	266 1.3×	172 1.4×	136 1.2×	80	1.4k
J.P. Duchemin France	19	900 0.9×	895 1.4×	155 0.8×	110 0.9×	62 0.5×	56	1.1k
A. A. Grinberg United States	13	619 0.6×	636 1.0×	187 0.9×	107 0.9×	79 0.7×	46	937
Kazuo Nanbu Japan	15	895 0.9×	879 1.4×	217 1.1×	179 1.5×	75 0.7×	31	1.1k
F. K. Reinhart Switzerland	15	682 0.7×	751 1.2×	173 0.9×	109 0.9×	133 1.2×	60	973
S. G. Matsik United States	16	690 0.7×	594 0.9×	185 0.9×	105 0.9×	153 1.4×	64	861

Countries citing papers authored by B. Brar

Since Specialization

Citations

This map shows the geographic impact of B. Brar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Brar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Brar more than expected).

Fields of papers citing papers by B. Brar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Brar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Brar. The network helps show where B. Brar may publish in the future.

Co-authorship network of co-authors of B. Brar

This figure shows the co-authorship network connecting the top 25 collaborators of B. Brar. A scholar is included among the top collaborators of B. Brar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Brar. B. Brar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Rodwell, M.J.W., Sang‐Ho Lee, D. Cohen-Elias, et al.. (2014). Nanometer InP electron devices for VLSI and THz applications. 10 indexed citations

Bergman, J., et al.. (2011). Wideband Low-Noise-Amplifier (LNA) with Lg = 50 nm InGaAs pHEMT and wideband RF chokes. 2011 IEEE MTT-S International Microwave Symposium. 1–1. 6 indexed citations

Griffith, Zach, Wonill Ha, Peter Chen, Dae-Hyun Kim, & B. Brar. (2010). A 206–294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment. 2010 IEEE MTT-S International Microwave Symposium. 57–60. 3 indexed citations

Chandrasekaran, Sriram, et al.. (2008). Novel GaAs Switch for Compact and Efficient Power Conversion. 1 indexed citations

Sullivan, Gerard, et al.. (2007). Ultra-Wideband Ultra-Low-DC-Power High Gain Differential-Input Low Noise Amplifier MMIC Using InAs/AlSb HEMT. 1–4. 7 indexed citations

Griffith, Zach, M.J.W. Rodwell, Miguel Urteaga, et al.. (2006). An Ultra Low-Power (⩽13.6 mW/latch) Static Frequency Divider in an InP/InGaAs DHBT Technology. 506–509. 4 indexed citations

Chen, Peter, et al.. (2006). Ultra-Low-Power Wideband High Gain InAs/AlSb HEMT Low-Noise Amplifiers. 73–76. 10 indexed citations

Griffith, Zach, M. Dahlstrǒm, Munkyo Seo, et al.. (2005). Ultra high frequency static dividers in a narrow mesa InGaAs/InP DHBT technology. 663–666. 2 indexed citations

Griffith, Zach, M.J.W. Rodwell, Miguel Urteaga, et al.. (2004). Ultra high frequency static dividers < 150 GHz in a narrow mesa InGaAs/InP DHBT technology. 176–179. 25 indexed citations

10.

Bergman, J., G. Nagy, G.J. Sullivan, et al.. (2003). InAs/AlSb HFETs with f/sub τ/ and f/sub max/ above 150 GHz for low-power MMICs. 219–222. 23 indexed citations

11.

Broekaert, T.P.E., B. Brar, Frank Morris, Alan Seabaugh, & Gary Frazier. (2003). Resonant tunneling technology for mixed signal and digital circuits in the 10-100 GHz domain. 123–126. 2 indexed citations

12.

Brar, B. & H. Kroemer. (2002). Impact ionization in InAs/AlSb field effect transistors. 28–29. 1 indexed citations

13.

Seabaugh, Alan, B. Brar, T.P.E. Broekaert, et al.. (2002). Resonant tunneling circuit technology: has it arrived?. 119–122. 10 indexed citations

14.

Seabaugh, Alan, et al.. (1999). Resonant-tunneling mixed-signal circuit technology. Solid-State Electronics. 43(8). 1355–1365. 29 indexed citations

15.

Broekaert, T.P.E., B. Brar, J.P.A. van der Wagt, et al.. (1999). Monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter. Computer Standards & Interfaces. 21(2). 104–104. 2 indexed citations

16.

Brar, B., et al.. (1997). Band Offset Measurement Of The ZnS/Si[001] Heterojunction. 167–170. 1 indexed citations

17.

Lake, Roger K., B. Brar, G. D. Wilk, Alan Seabaugh, & Gerhard Klimeck. (1997). Resonant tunneling in disordered materials such as SiO/sub 2//Si/SiO/sub 2/. 617–620. 1 indexed citations

18.

Lu, Zhaoming, J. P. McCaffrey, B. Brar, et al.. (1997). SiO 2 film thickness metrology by x-ray photoelectron spectroscopy. Applied Physics Letters. 71(19). 2764–2766. 192 indexed citations

19.

Gauer, C., A. Wixforth, J. P. Kotthaus, B. Brar, & H. Kroemer. (1996). Spin phenomena in intersubband transitions. Superlattices and Microstructures. 19(3). 241–249. 1 indexed citations

20.

Gauer, C., J. Scriba, A. Wixforth, et al.. (1994). Energy-dependant cyclotron mass in InAs/AlSb quantum wells. Semiconductor Science and Technology. 9(9). 1580–1583. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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