Yuji Ando

2.7k citations

126 papers · 2.1k indexed · 1 hit paper · h-index 24

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 76
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 35
- Radio Frequency Integrated Circuit Design 34
- Silicon Carbide Semiconductor Technologies 25
- Advancements in Semiconductor Devices and Circuit Design 22
- Advanced Power Amplifier Design 12
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 18
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 26
Materials Chemistry top 10%

Co-authors: Tomohiro Itoh Yasuhiro Okamoto Tatsuo Nakayama Hiroyuki Miyamoto Masaaki Kuzuhara Takafumi Inoue Tetsuji Itoh Akio Wakejima
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: IEEE Transactions on Electron Devices (19 papers)Electronics Letters (14 papers)Japanese Journal of Applied Physics (7 papers)
Partner nations: Japan United States France

In The Last Decade

Yuji Ando

117 papers receiving 2.0k citations

Hit Papers

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Peers

Countries citing papers authored by Yuji Ando

Since Specialization

Citations

This map shows the geographic impact of Yuji Ando's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuji Ando with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuji Ando more than expected).

Fields of papers citing papers by Yuji Ando

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuji Ando. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuji Ando. The network helps show where Yuji Ando may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Yuji Ando, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yuji Ando Line = papers co-authored together Yuji Ando links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT IEEE Microwave and Wireless Technology Letters ·Herbert Mace,王家爱,KookSun Kim,А. Р. Пушкарский,Qiang Ma,H. Takahashi,Yuji Ando,Akio Wakejima	2025	0
2	AlGaN/GaN Dual‐Gate HEMT Using a High Al Mole Fraction and Thin Barrier Layer Electronics Letters ·Yuji Ando,H. Takahashi,Fernão de Oliveira Salles,Akio Wakejima,Jun Suda	2025	0
3	Impact of a Moderately Doped Contact Layer on Breakdown Voltage in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification IEEE Transactions on Electron Devices ·Takayoshi Watanabe,H. Takahashi,Fernão de Oliveira Salles,Akio Wakejima,Yuji Ando,Jun Suda	2025	0
4	Vertical-channel Crystalline In₂O₃FET with a Pulled-up Gate, Monolithically Stacked on Si CMOS, Achieving 112.2 µA/µm On-state Current Sq Ji,Xiaoxi Cheng,James T. Trbovich,Yuji Ando,Shimpei Saito,B.A. Brown,Dea Arozamena,ゆかり日光,島聖,Hirohisa Katagiri,Takuya Matsuzaki,Tatsuya Onuki,Shunpei Yamazaki	2024	0
5	Gated-anode diodes for RF and microwave rectifiers for WPT applications: a simulation study on DC and RF characteristics Journal of Computational Electronics ·А. Р. Пушкарский,MILTON J. EOSENAU,H. Takahashi,Yuji Ando,Akio Wakejima	2024	1
6	Improvement of Gate Length Dependence in Electrical Characteristics of AlGaN/GaN Dual-Gate HEMTs IEEE Transactions on Electron Devices ·Yuji Ando,H. Takahashi,Fernão de Oliveira Salles,Akio Wakejima,Jun Suda	2024	2
7	Prospects of mist CVD for fabrication of β-Ga₂O₃ MESFETs on β-Ga₂O₃ (010) substrates Applied Physics Express ·Y. Le Marchand-Brustel,Yuji Ando,H. Takahashi,Fernão de Oliveira Salles,Brock P. Whittenberger,Tetsuzo Ueda,Jun Suda,Katsuhisa Tanaka,Shizυo Fujita,H. Sugaya	2023	11
8	Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory H. Takahashi,Yoji Okamoto,Takashi Hamada,James T. Trbovich,Shin Watanabe,Moh. Rizal Khanafi,Hideaki Sawai,Takuya Matsuzaki,Yuji Ando,Tatsuya Onuki,Meldra Ķemere,Hongwei Yuan,Daisuke Kobayashi,Akiko Ikuta,Takahiro Makino,Takeshi Ohshima	2023	2
9	RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i ‐line stepper lithography Electronics Letters ·Yuji Ando,H. Takahashi,Fernão de Oliveira Salles,Akio Wakejima,Jun Suda	2023	2
10	Laser slice thinning of GaN-on-GaN high electron mobility transistors Scientific Reports ·Atsushi Tanaka,Felix Thoma,Daisuke Kawaguchi,C. MELvlN Aikens,Hirotaka Watanabe,C. Shimomura,Yuto Ando,Yoshio Honda,Bertu Rianto Takaendengan,Akio Wakejima,Yuji Ando,Hiroshi Amano	2022	6
11	Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate IEEE Journal of the Electron Devices Society ·Qiang Ma,Mistar Martaman Sari Gulo,Atsushi Tanaka,Yuji Ando,Akio Wakejima	2022	1
12	Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction Applied Physics Express ·Alessandra Mancini,Akira Ueda,Tetsuya Tohei,Yasuhiko Imai,芳弘村上,Kazushi Sumitani,Shigeru Kimura,Yuji Ando,Tamotsu Hashizume,Akira Sakai	2021	5
13	Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate Electronics Letters ·Qiang Ma,Yuji Ando,Akio Wakejima	2021	7
14	Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT IEICE Technical Report; IEICE Tech. Rep. ·H. Takahashi,Yuji Ando,KookSun Kim,Akio Wakejima,Hiroaki Hayashi,Eiji Yagyu,Subhan Zein,Naoki Sakai,Kenji Itoh,Jun Suda	2020	1
15	Transient response of drain current following biasing stress in GaN HEMTs on SiC substrates with a field plate Japanese Journal of Applied Physics ·Qiang Ma,S Suciu,Yuji Ando,Akio Wakejima	2020	7
16	Dependence of electric power flow on solar radiation power in compact photovoltaic system containing SiC-based inverter with spherical Si solar cells Heliyon ·Yuji Ando,Takeo Oku,Masashi Yasuda,Ольга Ивановна Нифонтова,Hiroshi Matsuo,Mikio Murozono	2019	5
17	Fabrication of nanostripe surface structure by multilayer film deposition combined with micropatterning Nanotechnology ·Yuji Ando,Koji Miyake,Akira Mizuno,Atsushi Korenaga,Miki Nakano,Hiroki Mano	2010	13
18	High power AlGaN/GaN heterojunction FETs for base station applications Yuji Ando,Yasuhiro Okamoto,Tatsuo Nakayama,Takafumi Inoue,Katherine M. Elston,Hiroyuki Miyamoto,Marie-Odile Calvar,Koji Hirata,Masayoshi Kosaki,Naoki Shibata,Masaaki Kuzuhara	2004	1
19	Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs IEICE Transactions on Electronics ·A. M. AUGUSTO,Yuji Ando,Oscar Darío Garzón Romero,Yasuhiro Okamoto,Tatsuo Nakayama,Ерилин Сергей Александрович,Masaaki Kuzuhara	2003	13
20	96 W AlGaN/GaN heterojunction FET with field-modulating plate Electronics Letters ·Yasuhiro Okamoto,Yuji Ando,Katherine M. Elston,Hiroyuki Miyamoto,Tatsuo Nakayama,Takafumi Inoue,Masaaki Kuzuhara	2003	13

About Yuji Ando

Yuji Ando is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 126 papers that have together received 2.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (76 papers), Semiconductor materials and devices (35 papers), Radio Frequency Integrated Circuit Design (34 papers), Semiconductor Quantum Structures and Devices (26 papers), Silicon Carbide Semiconductor Technologies (25 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Ga2O3 and related materials (18 papers) and Advanced Power Amplifier Design (12 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electrical and Electronic Engineering (1.7k citations), Electronic, Optical and Magnetic Materials (502 citations), Atomic and Molecular Physics, and Optics (762 citations) and Materials Chemistry (366 citations). Yuji Ando has collaborated with scholars based in Japan, United States and France. Frequent co-authors include Tomohiro Itoh, Yasuhiro Okamoto, Tatsuo Nakayama, Hiroyuki Miyamoto, Masaaki Kuzuhara, Takafumi Inoue, Tetsuji Itoh, Akio Wakejima, Shota Kaneki and Tamotsu Hashizume. Their work appears in journals such as IEEE Transactions on Electron Devices, Electronics Letters, Japanese Journal of Applied Physics, Applied Physics Express and Tribology Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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