Yuji Ando

2.7k total citations · 1 hit paper
126 papers, 2.1k citations indexed

About

Yuji Ando is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Yuji Ando has authored 126 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 100 papers in Electrical and Electronic Engineering, 76 papers in Condensed Matter Physics and 43 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Yuji Ando's work include GaN-based semiconductor devices and materials (76 papers), Semiconductor materials and devices (35 papers) and Radio Frequency Integrated Circuit Design (34 papers). Yuji Ando is often cited by papers focused on GaN-based semiconductor devices and materials (76 papers), Semiconductor materials and devices (35 papers) and Radio Frequency Integrated Circuit Design (34 papers). Yuji Ando collaborates with scholars based in Japan, United States and France. Yuji Ando's co-authors include Tomohiro Itoh, Yasuhiro Okamoto, Tatsuo Nakayama, Hiroyuki Miyamoto, Masaaki Kuzuhara, Takafumi Inoue, Tetsuji Itoh, Akio Wakejima, Shota Kaneki and Tamotsu Hashizume and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Yuji Ando

117 papers receiving 2.0k citations

Hit Papers

Calculation of transmission tunneling current across arbi... 1987 2026 2000 2013 1987 100 200 300

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yuji Ando Japan 24 1.7k 1.2k 762 502 366 126 2.1k
I.C. Kizilyalli United States 28 2.9k 1.8× 1.6k 1.3× 663 0.9× 750 1.5× 650 1.8× 100 3.3k
Jing Lu United States 22 1.1k 0.7× 1.1k 0.9× 411 0.5× 625 1.2× 471 1.3× 73 1.7k
Niklas Rorsman Sweden 31 2.8k 1.7× 1.8k 1.4× 769 1.0× 532 1.1× 496 1.4× 199 3.2k
Francis J. Kub United States 22 1.2k 0.7× 997 0.8× 244 0.3× 543 1.1× 429 1.2× 118 1.7k
D. Pogány Austria 32 2.7k 1.6× 1.9k 1.5× 556 0.7× 791 1.6× 515 1.4× 208 3.2k
Edward Beam United States 29 2.0k 1.2× 1.5k 1.2× 980 1.3× 645 1.3× 520 1.4× 117 2.6k
Yu Zhou China 22 1.0k 0.6× 1.1k 0.9× 557 0.7× 590 1.2× 331 0.9× 129 1.7k
M. Sugimoto Japan 23 1.1k 0.7× 649 0.5× 474 0.6× 326 0.6× 303 0.8× 101 1.6k
Jinwook Burm South Korea 21 1.0k 0.6× 885 0.7× 341 0.4× 353 0.7× 271 0.7× 84 1.5k
R.E. Fontana United States 25 971 0.6× 453 0.4× 1.5k 2.0× 816 1.6× 568 1.6× 74 2.2k

Countries citing papers authored by Yuji Ando

Since Specialization
Citations

This map shows the geographic impact of Yuji Ando's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuji Ando with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuji Ando more than expected).

Fields of papers citing papers by Yuji Ando

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuji Ando. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuji Ando. The network helps show where Yuji Ando may publish in the future.

Co-authorship network of co-authors of Yuji Ando

This figure shows the co-authorship network connecting the top 25 collaborators of Yuji Ando. A scholar is included among the top collaborators of Yuji Ando based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuji Ando. Yuji Ando is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ma, Qiang, et al.. (2025). High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT. IEEE Microwave and Wireless Technology Letters. 35(3). 310–313.
2.
Ando, Yuji, et al.. (2025). AlGaN/GaN Dual‐Gate HEMT Using a High Al Mole Fraction and Thin Barrier Layer. Electronics Letters. 61(1).
3.
Watanabe, Takayoshi, et al.. (2025). Impact of a Moderately Doped Contact Layer on Breakdown Voltage in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification. IEEE Transactions on Electron Devices. 72(3). 1008–1013.
5.
Takahashi, H., et al.. (2024). Gated-anode diodes for RF and microwave rectifiers for WPT applications: a simulation study on DC and RF characteristics. Journal of Computational Electronics. 23(6). 1368–1379. 1 indexed citations
6.
Ando, Yuji, et al.. (2024). Improvement of Gate Length Dependence in Electrical Characteristics of AlGaN/GaN Dual-Gate HEMTs. IEEE Transactions on Electron Devices. 71(9). 5280–5288. 2 indexed citations
7.
Ando, Yuji, H. Takahashi, Tetsuzo Ueda, et al.. (2023). Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates. Applied Physics Express. 16(8). 81004–81004. 11 indexed citations
8.
Takahashi, H., Yoji Okamoto, Takashi Hamada, et al.. (2023). Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory. 1–6. 2 indexed citations
9.
10.
Tanaka, Atsushi, Daisuke Kawaguchi, Hirotaka Watanabe, et al.. (2022). Laser slice thinning of GaN-on-GaN high electron mobility transistors. Scientific Reports. 12(1). 7363–7363. 6 indexed citations
11.
Ma, Qiang, et al.. (2022). Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate. IEEE Journal of the Electron Devices Society. 10. 297–300. 1 indexed citations
12.
Ueda, Akira, Tetsuya Tohei, Yasuhiko Imai, et al.. (2021). Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction. Applied Physics Express. 14(9). 95502–95502. 5 indexed citations
13.
Ma, Qiang, Yuji Ando, & Akio Wakejima. (2021). Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate. Electronics Letters. 57(15). 591–593. 7 indexed citations
14.
Takahashi, H., Yuji Ando, Akio Wakejima, et al.. (2020). Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT. IEICE Technical Report; IEICE Tech. Rep.. 120(182). 1–5. 1 indexed citations
15.
Ma, Qiang, et al.. (2020). Transient response of drain current following biasing stress in GaN HEMTs on SiC substrates with a field plate. Japanese Journal of Applied Physics. 59(10). 101002–101002. 7 indexed citations
17.
Ando, Yuji, Koji Miyake, Akira Mizuno, et al.. (2010). Fabrication of nanostripe surface structure by multilayer film deposition combined with micropatterning. Nanotechnology. 21(9). 95304–95304. 13 indexed citations
18.
Ando, Yuji, Yasuhiro Okamoto, Tatsuo Nakayama, et al.. (2004). High power AlGaN/GaN heterojunction FETs for base station applications. 90. 31–32. 1 indexed citations
19.
Ando, Yuji, et al.. (2003). Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs. IEICE Transactions on Electronics. 86(10). 2065–2070. 13 indexed citations
20.
Okamoto, Yasuhiro, Yuji Ando, Hiroyuki Miyamoto, et al.. (2003). 96 W AlGaN/GaN heterojunction FET with field-modulating plate. Electronics Letters. 39(20). 1474–1475. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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