Mingda Zhu

1.7k total citations
42 papers, 1.5k citations indexed

About

Mingda Zhu is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Mingda Zhu has authored 42 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 27 papers in Condensed Matter Physics and 16 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Mingda Zhu's work include GaN-based semiconductor devices and materials (27 papers), Ga2O3 and related materials (14 papers) and Silicon Carbide Semiconductor Technologies (14 papers). Mingda Zhu is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Ga2O3 and related materials (14 papers) and Silicon Carbide Semiconductor Technologies (14 papers). Mingda Zhu collaborates with scholars based in United States, China and Mongolia. Mingda Zhu's co-authors include Huili Grace Xing, Debdeep Jena, Kazuki Nomoto, Zongyang Hu, Bo Song, Meng Qi, Vladimir Protasenko, Xiang Gao, Xiaodong Yan and Berardi Sensale‐Rodriguez and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Mingda Zhu

41 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Mingda Zhu United States	17	1.0k	942	710	305	299	42	1.5k
Kwang-Seok Seo South Korea	20	1.2k 1.2×	778 0.8×	440 0.6×	171 0.6×	304 1.0×	134	1.5k
Debdeep Jena United States	12	745 0.7×	375 0.4×	285 0.4×	652 2.1×	247 0.8×	29	1.2k
Hai Lu China	17	495 0.5×	314 0.3×	306 0.4×	265 0.9×	346 1.2×	83	976
Eduard Galstyan United States	23	334 0.3×	1.2k 1.3×	826 1.2×	466 1.5×	160 0.5×	84	1.7k
V. Kuryatkov United States	20	617 0.6×	792 0.8×	730 1.0×	479 1.6×	251 0.8×	83	1.3k
Shujun Cai China	25	854 0.8×	680 0.7×	978 1.4×	1.1k 3.6×	239 0.8×	112	1.8k
Masaru Sato Japan	19	1.1k 1.1×	307 0.3×	144 0.2×	174 0.6×	321 1.1×	153	1.3k
Jeong‐Sun Moon United States	20	977 1.0×	597 0.6×	251 0.4×	576 1.9×	372 1.2×	61	1.3k
Lucia V. Mercaldo Italy	19	791 0.8×	272 0.3×	223 0.3×	509 1.7×	208 0.7×	91	1.2k
J. Gillespie United States	25	1.2k 1.2×	1.4k 1.5×	584 0.8×	399 1.3×	320 1.1×	79	1.7k

Countries citing papers authored by Mingda Zhu

Since Specialization

Citations

This map shows the geographic impact of Mingda Zhu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mingda Zhu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mingda Zhu more than expected).

Fields of papers citing papers by Mingda Zhu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mingda Zhu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mingda Zhu. The network helps show where Mingda Zhu may publish in the future.

Co-authorship network of co-authors of Mingda Zhu

This figure shows the co-authorship network connecting the top 25 collaborators of Mingda Zhu. A scholar is included among the top collaborators of Mingda Zhu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mingda Zhu. Mingda Zhu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Zhu, Mingda. (2025). The role and prospect of artificial intelligence in rural economic development. Journal of Computational Methods in Sciences and Engineering.

Zhu, Mingda. (2024). Multiple regression analysis of the mechanism of the role of infrastructure development in rural economic growth. Applied Mathematics and Nonlinear Sciences. 9(1). 1 indexed citations

Ding, Jiannan, Mingda Zhu, Hang Jiang, et al.. (2024). Impact of COVID-19 pandemic on microplastic occurrence in aquatic environments: A three-year study in Taihu Lake Basin, China. Journal of Hazardous Materials. 478. 135530–135530. 3 indexed citations

Nomoto, Kazuki, Wenshen Li, Bo Song, et al.. (2022). Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV. Applied Physics Letters. 120(12). 4 indexed citations

Miao, Xinyang, et al.. (2021). Terahertz Spectral Characteristics of Rocks With Different Lithologies. Guangpuxue yu guangpu fenxi. 41(4). 1314. 2 indexed citations

Li, Wenshen, Kazuki Nomoto, Aditya Sundar, et al.. (2019). Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms. Japanese Journal of Applied Physics. 58(SC). SCCD15–SCCD15. 18 indexed citations

Nomoto, Kazuki, Zongyang Hu, Wenshen Li, et al.. (2019). Recent Progress of GaN-Based Vertical Devices. ECS Meeting Abstracts. MA2019-02(31). 1348–1348. 1 indexed citations

Li, Wenshen, Huili Grace Xing, Kazuki Nomoto, et al.. (2018). Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel. IEEE Transactions on Electron Devices. 65(6). 2558–2564. 56 indexed citations

Chanana, Ashish, Jimy Encomendero, Mingda Zhu, et al.. (2018). Comparison of unit cell coupling for grating-gate and high electron mobility transistor array THz resonant absorbers. Journal of Applied Physics. 124(9). 6 indexed citations

10.

Hu, Zongyang, Kazuki Nomoto, Meng Qi, et al.. (2017). 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy. IEEE Electron Device Letters. 38(8). 1071–1074. 64 indexed citations

11.

Li, Wenshen, Kazuki Nomoto, Kevin Lee, et al.. (2017). 600 V GaN vertical V-trench MOSFET with MBE regrown channel. 14 indexed citations

12.

Hu, Zongyang, Wenshen Li, Kazuki Nomoto, et al.. (2017). GaN vertical nanowire and fin power MISFETs. 28. 1–2. 11 indexed citations

13.

Zhu, Mingda, Bo Song, Zongyang Hu, et al.. (2016). Comparing buffer leakage in PolarMOSH on SiC and free-standing GaN substrates. 27–30. 2 indexed citations

14.

Nomoto, Kazuki, Bo Song, Zongyang Hu, et al.. (2015). 1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability. IEEE Electron Device Letters. 37(2). 161–164. 160 indexed citations

15.

Qi, Meng, Kazuki Nomoto, Mingda Zhu, et al.. (2015). High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy. Applied Physics Letters. 107(23). 53 indexed citations

16.

Song, Bo, Mingda Zhu, Zongyang Hu, et al.. (2014). AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing < 60 mV/dec over 6 orders of drain current swing and relation to traps. 1–2. 3 indexed citations

17.

Zhao, Yi‐Feng, William Chen, Mingda Zhu, et al.. (2014). Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases. Applied Physics Letters. 105(17). 8 indexed citations

18.

Sensale‐Rodriguez, Berardi, Subrina Rafique, Rusen Yan, et al.. (2013). Terahertz imaging employing graphene modulator arrays. Optics Express. 21(2). 2324–2324. 100 indexed citations

19.

Zhang, Haojun, Mingda Zhu, Berardi Sensale‐Rodriguez, & Huili Grace Xing. (2013). THz plasmonic absorption in periodically patterned semiconductor ribbons. 35. 1–3. 1 indexed citations

20.

Zhu, Mingda, Juncheng Wang, & Gang Du. (2010). Design and optimization of a novel SOI LDMOS structure using PIN junction. 35. 1–4. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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