A. Ramakrishnan

1.3k citations

22 papers · 1.1k indexed · h-index 12

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 13
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 9
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 11
Materials Chemistry top 10%
- ZnO doping and properties 6
Electrical and Electronic Engineering top 10%
- Semiconductor Lasers and Optical Devices 9
- Photonic and Optical Devices 6
- Molecular Junctions and Nanostructures 2
Mechanics of Materials
- Metal and Thin Film Mechanics 2

Co-authors: H. Obloh M. Kunzer Matthias Maier U. Kaufmann Branko Šantić P. Schlotter G. Steinle Henning Riechert
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (6 papers)Semiconductor Science and Technology (3 papers)Journal of Crystal Growth (2 papers)
Partner nations: Germany United States United Kingdom

In The Last Decade

A. Ramakrishnan

22 papers receiving 1.0k citations

Peers

Countries citing papers authored by A. Ramakrishnan

Since Specialization

Citations

This map shows the geographic impact of A. Ramakrishnan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Ramakrishnan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Ramakrishnan more than expected).

Fields of papers citing papers by A. Ramakrishnan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Ramakrishnan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Ramakrishnan. The network helps show where A. Ramakrishnan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Ramakrishnan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Ramakrishnan Line = papers co-authored together A. Ramakrishnan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Long-wavelength VCSEL with integrated relief for control of singlemode emission Optics Communications ·Mengdi Huang,E.V. Dvornikova,D. Turmakhanbet,I. Siatkowski,A. Sukhanov,T. Bellomo,A. Ramakrishnan,G. Ebbinghaus,G. Steinle	2006	6
2	1.3 μm VCSELs for fiber-optical communication systems H. Riechert,Lutz Geelhaar,G. Ebbinghaus,T. Bellomo,A. Ramakrishnan	2003	2
3	Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers Solid-State Electronics ·R. Fehse,A.R. Adams,Stephen J. Sweeney,Stanko Tomić,H. Riechert,A. Ramakrishnan	2003	4
4	Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·H. Grüning,K. Koháry,S. D. Baranovskiǐ,Oleg Rubel,Peter J. Klar,A. Ramakrishnan,G. Ebbinghaus,P. Thomas,W. Heimbrodt,W. Stolz,W. W. Rühle	2003	41
5	Quantitative spectroscopy of substitutional nitrogen in GaAs_1 xN_xepitaxial layers by local vibrational mode absorption Semiconductor Science and Technology ·J. Li,Y. V. Gomeniuk,G. Ebbinghaus,A. Ramakrishnan,Henning Riechert	2003	19
6	Development of GaInNAs-based 1.3-μm VCSEL Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·A. Ramakrishnan,G. Ebbinghaus,T. Bellomo,Mengdi Huang,Yulu Liang,Megan Carney,A. Sukhanov,Carl Julius Bernhard Bèorner,Fleming Ej,Reinhard Scholz,О. М. Чайка,Angeline Atsame-Edda,Martin Weigert,Henning Riechert,G. Steinle	2003	1
7	Development of InGaAsN-based 1.3 m VCSELs Semiconductor Science and Technology ·Henning Riechert,A. Ramakrishnan,G. Steinle	2002	114
8	Nitrogen incorporation in (GaIn)(NAs) for 1.3μm VCSEL grown with MOVPE Journal of Crystal Growth ·A. Ramakrishnan,G. Steinle,Mengdi Huang,W. Stolz,G. Ebbinghaus	2002	14
9	Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region Electronics Letters ·A. Ramakrishnan,G. Steinle,Mengdi Huang,A. Sukhanov,G. Ebbinghaus	2002	72
10	Production and export of selected non-wood forest products in India in 2005. 憲史坂田,A. Ramakrishnan,Auni Nadzirah Abd Rashid	2000	1
11	Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model MRS Internet Journal of Nitride Semiconductor Research ·J. Wagner,A. Ramakrishnan,H. Obloh,M. Kunzer,K. Köhler,Blaine Johs	2000	2
12	Composition Dependence of the Band Gap Energy of In_xGa_1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition MRS Internet Journal of Nitride Semiconductor Research ·J. Wagner,A. Ramakrishnan,D. Behr,Matthias Maier,N. Herres,M. Kunzer,H. Obloh,K. H. Bachem	1999	3
13	Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model MRS Proceedings ·J. Wagner,A. Ramakrishnan,H. Obloh,M. Kunzer,K. Köhler,Blaine Johs	1999	2
14	Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering Applied Physics Letters ·J. Wagner,A. Ramakrishnan,H. Obloh,Matthias Maier	1999	27
15	Origin of defect-related photoluminescence bands in doped and nominally undoped GaN Physical review. B, Condensed matter ·U. Kaufmann,M. Kunzer,H. Obloh,Matthias Maier,C. Manz,A. Ramakrishnan,Branko Šantić	1999	240
16	In x Ga 1−x N/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN Applied Physics Letters ·C. Manz,M. Kunzer,H. Obloh,A. Ramakrishnan,U. Kaufmann	1999	31
17	Self-compensation in Mg doped p-type GaN grown by MOCVD Journal of Crystal Growth ·H. Obloh,K. H. Bachem,U. Kaufmann,M. Kunzer,Matthias Maier,A. Ramakrishnan,P. Schlotter	1998	110
18	Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering Applied Physics Letters ·D. Behr,J. Wagner,A. Ramakrishnan,H. Obloh,K. H. Bachem	1998	51
19	Spectroscopic ellipsometry characterization of (InGa)N on GaN Applied Physics Letters ·J. Wagner,A. Ramakrishnan,D. Behr,H. Obloh,M. Kunzer,K. H. Bachem	1998	18
20	Nature of the 2.8 eV photoluminescence band in Mg doped GaN Applied Physics Letters ·U. Kaufmann,M. Kunzer,Matthias Maier,H. Obloh,A. Ramakrishnan,Branko Šantić,P. Schlotter	1998	306

About A. Ramakrishnan

A. Ramakrishnan is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 22 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (13 papers), Semiconductor Quantum Structures and Devices (11 papers), Semiconductor Lasers and Optical Devices (9 papers), Ga2O3 and related materials (9 papers), Photonic and Optical Devices (6 papers), ZnO doping and properties (6 papers), Molecular Junctions and Nanostructures (2 papers) and Metal and Thin Film Mechanics (2 papers). The work is most often cited by research in Condensed Matter Physics (839 citations), Electronic, Optical and Magnetic Materials (458 citations), Atomic and Molecular Physics, and Optics (427 citations), Materials Chemistry (418 citations) and Electrical and Electronic Engineering (509 citations). A. Ramakrishnan has collaborated with scholars based in Germany, United States and United Kingdom. Frequent co-authors include H. Obloh, M. Kunzer, Matthias Maier, U. Kaufmann, Branko Šantić, P. Schlotter, G. Steinle, Henning Riechert, C. Manz and K. H. Bachem. Their work appears in journals such as Applied Physics Letters, Semiconductor Science and Technology, Journal of Crystal Growth, MRS Internet Journal of Nitride Semiconductor Research and Solid-State Electronics.

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