A. Ramakrishnan

1.3k total citations
22 papers, 1.1k citations indexed

About

A. Ramakrishnan is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, A. Ramakrishnan has authored 22 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Condensed Matter Physics, 11 papers in Atomic and Molecular Physics, and Optics and 10 papers in Electrical and Electronic Engineering. Recurrent topics in A. Ramakrishnan's work include GaN-based semiconductor devices and materials (13 papers), Semiconductor Quantum Structures and Devices (11 papers) and Semiconductor Lasers and Optical Devices (9 papers). A. Ramakrishnan is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Semiconductor Quantum Structures and Devices (11 papers) and Semiconductor Lasers and Optical Devices (9 papers). A. Ramakrishnan collaborates with scholars based in Germany, United States and United Kingdom. A. Ramakrishnan's co-authors include H. Obloh, M. Kunzer, Matthias Maier, U. Kaufmann, Branko Šantić, P. Schlotter, G. Steinle, Henning Riechert, C. Manz and K. H. Bachem and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Crystal Growth.

In The Last Decade

A. Ramakrishnan

22 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Ramakrishnan Germany 12 839 509 458 427 418 22 1.1k
I. K. Shmagin United States 11 795 0.9× 391 0.8× 389 0.8× 360 0.8× 419 1.0× 16 1.0k
S. Dalmasso France 14 846 1.0× 373 0.7× 406 0.9× 327 0.8× 486 1.2× 42 1.0k
E. Haus United States 9 1.0k 1.2× 415 0.8× 551 1.2× 329 0.8× 480 1.1× 11 1.1k
Tomoya Sugahara Japan 12 804 1.0× 367 0.7× 345 0.8× 376 0.9× 309 0.7× 18 900
S. Krishnankutty United States 16 1.0k 1.2× 395 0.8× 576 1.3× 429 1.0× 417 1.0× 31 1.2k
W. G. Perry United States 13 803 1.0× 335 0.7× 348 0.8× 248 0.6× 376 0.9× 27 897
N. Teraguchi Japan 18 763 0.9× 580 1.1× 468 1.0× 431 1.0× 605 1.4× 47 1.2k
Hideo Kawanishi Japan 16 608 0.7× 386 0.8× 336 0.7× 293 0.7× 285 0.7× 65 861
S. E. Hooper United Kingdom 17 720 0.9× 374 0.7× 269 0.6× 463 1.1× 248 0.6× 52 834
T. Hino Japan 12 706 0.8× 506 1.0× 262 0.6× 510 1.2× 400 1.0× 26 989

Countries citing papers authored by A. Ramakrishnan

Since Specialization
Citations

This map shows the geographic impact of A. Ramakrishnan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Ramakrishnan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Ramakrishnan more than expected).

Fields of papers citing papers by A. Ramakrishnan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Ramakrishnan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Ramakrishnan. The network helps show where A. Ramakrishnan may publish in the future.

Co-authorship network of co-authors of A. Ramakrishnan

This figure shows the co-authorship network connecting the top 25 collaborators of A. Ramakrishnan. A scholar is included among the top collaborators of A. Ramakrishnan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Ramakrishnan. A. Ramakrishnan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ramakrishnan, A., et al.. (2006). Long-wavelength VCSEL with integrated relief for control of singlemode emission. Optics Communications. 267(2). 447–450. 6 indexed citations
2.
Riechert, H., et al.. (2003). 1.3 μm VCSELs for fiber-optical communication systems. 6. 3–7. 2 indexed citations
3.
Fehse, R., A.R. Adams, Stephen J. Sweeney, et al.. (2003). Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers. Solid-State Electronics. 47(3). 501–506. 4 indexed citations
4.
Grüning, H., K. Koháry, S. D. Baranovskiǐ, et al.. (2003). Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1(1). 109–112. 41 indexed citations
5.
Gomeniuk, Y. V., et al.. (2003). Quantitative spectroscopy of substitutional nitrogen in GaAs1 xNxepitaxial layers by local vibrational mode absorption. Semiconductor Science and Technology. 18(4). 303–306. 19 indexed citations
6.
Ramakrishnan, A., G. Ebbinghaus, Reinhard Scholz, et al.. (2003). Development of GaInNAs-based 1.3-μm VCSEL. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5248. 127–127. 1 indexed citations
7.
Riechert, Henning, A. Ramakrishnan, & G. Steinle. (2002). Development of InGaAsN-based 1.3  m VCSELs. Semiconductor Science and Technology. 17(8). 892–897. 114 indexed citations
8.
Ramakrishnan, A., et al.. (2002). Nitrogen incorporation in (GaIn)(NAs) for 1.3μm VCSEL grown with MOVPE. Journal of Crystal Growth. 248. 457–462. 14 indexed citations
9.
Ramakrishnan, A., et al.. (2002). Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region. Electronics Letters. 38(7). 322–324. 72 indexed citations
10.
Ramakrishnan, A., et al.. (2000). Production and export of selected non-wood forest products in India in 2005.. 6(1). 1–11. 1 indexed citations
11.
Wagner, J., A. Ramakrishnan, H. Obloh, et al.. (2000). Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 775–781. 2 indexed citations
12.
Wagner, J., A. Ramakrishnan, D. Behr, et al.. (1999). Composition Dependence of the Band Gap Energy of InxGa1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 106–111. 3 indexed citations
13.
Wagner, J., A. Ramakrishnan, H. Obloh, et al.. (1999). Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model. MRS Proceedings. 595. 2 indexed citations
14.
Wagner, J., A. Ramakrishnan, H. Obloh, & Matthias Maier. (1999). Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering. Applied Physics Letters. 74(25). 3863–3865. 27 indexed citations
15.
Kaufmann, U., M. Kunzer, H. Obloh, et al.. (1999). Origin of defect-related photoluminescence bands in doped and nominally undoped GaN. Physical review. B, Condensed matter. 59(8). 5561–5567. 240 indexed citations
16.
Manz, C., M. Kunzer, H. Obloh, A. Ramakrishnan, & U. Kaufmann. (1999). In x Ga 1−x N/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN. Applied Physics Letters. 74(26). 3993–3995. 31 indexed citations
17.
Obloh, H., K. H. Bachem, U. Kaufmann, et al.. (1998). Self-compensation in Mg doped p-type GaN grown by MOCVD. Journal of Crystal Growth. 195(1-4). 270–273. 110 indexed citations
18.
Behr, D., J. Wagner, A. Ramakrishnan, H. Obloh, & K. H. Bachem. (1998). Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering. Applied Physics Letters. 73(2). 241–243. 51 indexed citations
19.
Wagner, J., A. Ramakrishnan, D. Behr, et al.. (1998). Spectroscopic ellipsometry characterization of (InGa)N on GaN. Applied Physics Letters. 73(12). 1715–1717. 18 indexed citations
20.
Kaufmann, U., M. Kunzer, Matthias Maier, et al.. (1998). Nature of the 2.8 eV photoluminescence band in Mg doped GaN. Applied Physics Letters. 72(11). 1326–1328. 306 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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